Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
IS42S16160J-7TLI-TR
Integrated Silicon Solution
IS42S16160J-7TLI-TR by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 3.3V supply voltage, operating at -40 to 85 °C. It features SYNCHRONOUS mode, SELF REFRESH capability, and FOUR BANK PAGE BURST access mode. Ideal for industrial applications requiring high memory density and fast access times.
FOUR BANK PAGE BURST
5.4 ns
AUTO/SELF REFRESH
R-PDSO-G54
22.22 mm
268435456 bit
SYNCHRONOUS DRAM
16
1
54
16777216 words
16M
SYNCHRONOUS
85 Cel
-40 Cel
16MX16
PLASTIC/EPOXY
TSOP2
RECTANGULAR
SMALL OUTLINE, THIN PROFILE
NOT SPECIFIED
1.2 mm
YES
3.6 V
3 V
3.3
CMOS
INDUSTRIAL
GULL WING
.8 mm
DUAL
10.16 mm
IS43LD32640B-18BLI-TR
IS43LD32640B-18BLI-TR by Integrated Silicon Solution is a 64MX32 LPDDR2 DRAM with 67108864 words and 2147483648 bit memory density. Operating at 1.2V, it features synchronous mode, self-refresh capability, and multi-bank page burst access mode. Ideal for industrial applications requiring high-speed memory performance in a compact grid array package.
MULTI BANK PAGE BURST
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
R-PBGA-B134
11.5 mm
2147483648 bit
LPDDR2 DRAM
32
134
67108864 words
64M
64MX32
TFBGA
GRID ARRAY, THIN PROFILE, FINE PITCH
1.1 mm
1.3 V
1.14 V
1.2
BALL
.65 mm
BOTTOM
10 mm
IS43TR16512BL-125KBLI-TR
IS43TR16512BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and a thin profile grid array package. Ideal for industrial applications requiring high memory density and fast data processing.
800 MHz
4,8
R-PBGA-B96
e1
14 mm
8589934592 bit
DDR3L DRAM
3
96
536870912 words
512M
95 Cel
512MX16
BGA96,6X16,32
260
8192
.055 Amp
1.283 V
95 mA
1.45 V
1.35
TIN SILVER COPPER
10
MT40A512M16LY-062EIT:E
Micron Technology
Micron Technology's MT40A512M16LY-062EIT:E is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with multi-bank page burst access mode.
COMMON
8
13.5 mm
DDR4 DRAM
BGA96,9X16,32
65536
NO
1.26 V
30
7.5 mm
MT48LC4M16A2P-6AAIT:J
Micron Technology's MT48LC4M16A2P-6AAIT:J is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, 5.5ns access time, and industrial temperature grade suitable for memory-intensive applications like networking equipment and industrial automation systems.
5.5 ns
e3
67108864 bit
4194304 words
4M
4MX16
Tin (Sn)
MT53B256M32D1DS-062AAT:C
Micron Technology's MT53B256M32D1DS-062AAT:C is a LPDDR4 DRAM with 256MX32 organization, operating at 1600 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
SINGLE BANK PAGE BURST
SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX
1600 MHz
16,32
R-PBGA-B200
14.5 mm
LPDDR4 DRAM
200
268435456 words
256M
105 Cel
256MX32
VFBGA
BGA200,12X22,32/25
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
16384
.0033 Amp
410 mA
1.17 V
1.06 V
1.1
MT41K512M16VRN-107AIT:P
Micron Technology's MT41K512M16VRN-107AIT:P is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing.
934.57 MHz
AEC-Q100
.022 Amp
304 mA
8 mm
MT46V32M16BN-6IT:FTR
DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Nominal Supply Voltage / Vsup (V): 2.5;
.7 ns
R-PBGA-B60
12.5 mm
536870912 bit
DDR1 DRAM
60
33554432 words
32M
32MX16
TBGA
GRID ARRAY, THIN PROFILE
2.7 V
2.3 V
2.5
1 mm
MT40A256M16LY-062EIT:F
Micron Technology's MT40A256M16LY-062EIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access in thin profile devices.
DUAL BANK PAGE BURST
4294967296 bit
256MX16
MT48LC8M16A2B4-6AXIT:L
Micron Technology's MT48LC8M16A2B4-6AXIT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. It operates at 3.3V, has a peak reflow temp of 260°C, and offers a max access time of 5.4 ns. Ideal for industrial applications requiring high-speed and reliable memory performance.
S-PBGA-B54
134217728 bit
8388608 words
8M
8MX16
SQUARE
Tin/Silver/Copper (Sn/Ag/Cu)
MT48LC8M16A2P-6AAAT:L
Micron Technology's MT48LC8M16A2P-6AAAT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a max access time of 5.4ns and supports self-refresh mode. Ideal for industrial applications requiring fast and reliable memory performance.
Matte Tin (Sn)
MT48LC8M16A2P-7EAIT:L
Micron Technology's MT48LC8M16A2P-7EAIT:L is a 3.3V, 8MX16 Synchronous DRAM with self-refresh capability. Operating in industrial temperature range (-40 to 85 °C), it offers fast access time of 5.4 ns and memory density of 134217728 bits. Ideal for applications requiring high-speed data processing and reliable memory storage in compact devices.
MT40A512M16JY-083EIT:BTR
Micron Technology's MT40A512M16JY-083EIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast access mode like multi-bank page burst operations.
MT40A512M8SA-062EIT:F
Micron Technology's MT40A512M8SA-062EIT:F is a DDR4 DRAM with 512MX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and fast data access with its four-bank page burst access mode.
R-PBGA-B78
11 mm
78
512MX8
MT41K512M8RH-125IT:ETR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit;
10.5 mm
9 mm
MT46V16M16TG-6TIT:FTR
Micron Technology's MT46V16M16TG-6TIT:FTR is a DDR1 DRAM with 16MX16 organization, operating at 2.5V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.7 ns, and small outline thin profile package style.
R-PDSO-G66
e0
66
TSSOP
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH
235
Tin/Lead (Sn/Pb)
MT48LC16M16A2P-7EIT:GTR
MT48LC16M16A2P-7EIT:GTR by Micron Technology is a 16MX16 Synchronous DRAM with a memory density of 268435456 bit. It operates at a voltage of 3.3V and has an access time of 5.4 ns. This DRAM is commonly used in industrial applications that require high-speed and reliable memory storage.
MT48LC4M16A2B4-75IT:GTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Minimum Supply Voltage (Vsup): 3 V;
MT41K512M16VRN-107IT:P
MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.
MT48LC16M16A2F4-6AIT:GTR
SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: SQUARE; Maximum Seated Height: 1 mm;
AUTO REFRESH
MT53E768M32D4DT-046AAT:E
Micron Technology's MT53E768M32D4DT-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features a very thin profile, fine pitch package style and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V.
2133 MHz
25769803776 bit
805306368 words
768M
768MX32
3-STATE
BGA200,12X20,32/25
.95 mm
MT53E768M32D4DT-053AAT:E
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 805306368 words;
1866 MHz
MT40A512M16LY-062EAT:E
Micron Technology's MT40A512M16LY-062EAT:E is a DDR4 DRAM with 512MX16 organization and 8589934592 bit memory density. It operates at a voltage of 1.2V, has a temperature range of -40 to 105°C, and is suitable for industrial applications.
MT40A2G8VA-062EIT:BTR
MT40A2G8VA-062EIT:BTR by Micron Technology is a DDR4 DRAM with 2GX8 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and fast access speed in a compact grid array package.
17179869184 bit
2147483648 words
2G
2GX8
MT40A512M8RH-083EAAT:BTR
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Minimum Standby Voltage: 1.14 V;
1200.4 MHz
BGA78,9X13,32
MT49H16M18CSJ-25IT:BTR
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, THIN PROFILE;
AUTO REFRESH; TERM PITCH-MAX
R-PBGA-B144
18.5 mm
301989888 bit
DDR DRAM
18
144
16MX18
1.9 V
1.7 V
1.8
MT49H16M36SJ-18IT:BTR
Micron Technology's MT49H16M36SJ-18IT:BTR is a 16MX36 DDR DRAM with 1.8V supply, operating at -40 to 85°C. It features synchronous operation, industrial temperature grade, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in compact devices.
603979776 bit
36
16MX36
MT49H8M36SJ-25IT:BTR
DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: TBGA; Package Shape: RECTANGULAR; No. of Words: 8388608 words;
8MX36
AS4C256M16D3B-12BINTR
Alliance Memory
Alliance Memory's AS4C256M16D3B-12BINTR is a 256MX16 DDR3 DRAM with 800 MHz clock frequency, suitable for industrial applications. It features synchronous operation, common I/O type, and self-refresh capability. With a thin profile and fine pitch package style, it offers high memory density of 4294967296 bits.
DDR3 DRAM
.032 Amp
1.425 V
55 mA
1.575 V
1.5
AS4C512M16D3L-12BINTR
Alliance Memory's AS4C512M16D3L-12BINTR is a 512MX16 DDR3L DRAM with 800 MHz clock frequency, suitable for industrial applications. Features include 1.35V nominal voltage, 95°C max operating temp, and multi-bank page burst access mode. Ideal for high-performance systems requiring low power consumption and fast data processing.
.011 Amp
185 mA
IS42S16400J-6BLI-TR
IS42S16400J-6BLI-TR by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 3.3V supply, operating at 166MHz. It features self-refresh mode, 54 terminals in a thin profile grid array package, and supports common I/O type. Ideal for industrial applications requiring fast memory access and high density storage capabilities.
166 MHz
1,2,4,8
BGA54,9X9,32
Not Qualified
4096
1,2,4,8,FP
.002 Amp
DRAMs
150 mA
W9864G6JT-6ITR
Winbond Electronics
W9864G6JT-6ITR by Winbond Electronics is a 4MX16 Synchronous DRAM with 67108864 bit memory density. It operates at 3.3V, has a max access time of 5ns, and supports four bank page burst access mode. This thin profile memory IC is ideal for industrial applications requiring high-speed data processing in compact spaces.
5 ns
AS4C32M16SB-7BINTR
Alliance Memory's AS4C32M16SB-7BINTR is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
143 MHz
COMMON/SEPARATE
.008 Amp
120 mA
AS4C32M16SB-7BIN
Alliance Memory's AS4C32M16SB-7BIN is a 32MX16 DRAM with 3.3V supply, operating at 143MHz clock frequency. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and a thin profile grid array package.
MT53E768M32D4DT-053AIT:E
Micron Technology's MT53E768M32D4DT-053AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 1866 MHz. It features a very thin profile package style, common I/O type, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast clock frequencies up to 1.17V supply voltage.
IS43TR81024BL-107MBLI
IS43TR81024BL-107MBLI by Integrated Silicon Solution is a DDR3L DRAM with 1GX8 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in a compact grid array package.
1073741824 words
1G
1GX8
IS46TR16640CL-107MBLA2
IS46TR16640CL-107MBLA2 by Integrated Silicon Solution is a 64MX16 DDR3 DRAM with 1.35V supply voltage, operating in synchronous mode with self-refresh capability. It features a memory density of 1073741824 bits and is suitable for industrial applications requiring multi-bank page burst access mode at temperatures ranging from -40 to 105°C.
13 mm
1073741824 bit
64MX16
IS43LQ16128A-062BLI
IS43LQ16128A-062BLI by Integrated Silicon Solution is a 128MX16 LPDDR4 DRAM with 1600 MHz clock frequency. It operates in synchronous mode, has a memory density of 2147483648 bit, and supports multi-bank page burst access. Ideal for industrial applications requiring high-speed data processing and low power consumption.
terminal pitch-max
134217728 words
128M
128MX16
.85 mm
1.95 V
MT40A1G16RC-062EIT:B
Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1GX16
MT53E512M32D2FW-046AAT:D
Micron Technology's MT53E512M32D2FW-046AAT:D is a LPDDR4 DRAM with 512MX32 organization, operating at 2136.7 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact package.
SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX
2136.7 MHz
512MX32
MT53B128M32D1DS-062AAT:A
LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
128MX32
W631GG6NB09I
Winbond Electronics' W631GG6NB09I is a 64MX16 DDR3 DRAM with 1066 MHz clock frequency, 1.5V supply voltage, and 95°C operating temperature. Ideal for industrial applications requiring high memory density and fast access times.
20 ns
1066 MHz
.05 Amp
270 mA
W631GG6NB12I
W631GG6NB12I by Winbond Electronics is a DDR3 DRAM with 64MX16 organization, operating at up to 800 MHz clock frequency. It features a 1.5V nominal voltage and offers a memory density of 1073741824 bits. This industrial-grade DRAM is suitable for applications requiring high-speed synchronous memory operations.
.04 Amp
220 mA
W631GG6NB11I
Winbond Electronics' W631GG6NB11I is a DDR3 DRAM with 64MX16 organization, operating at up to 933 MHz. It features a very thin profile grid array package and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.
933 MHz
.045 Amp
240 mA
W631GU6NB09I
Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
.06 Amp
W631GU6NB11I
Winbond Electronics' W631GU6NB11I is a DDR3L DRAM with 64MX16 organization, operating at up to 933 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
W631GU6NB12I
W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
D2516ECMDXGJDI-U
Kingston Technology Company
Kingston's D2516ECMDXGJDI-U is a DDR3L DRAM with 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for industrial applications, it features synchronous operation, self-refresh capability, and common I/O type for efficient data processing in thin profile grid array packages.
SELF REFRESH; BACKWARD COMPATIBLE TO 1.5V VDD
© 2023 All rights reserved
