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INDUSTRIAL DRAM 537

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT53E384M32D2DS-046AIT:E by Micron Technology

MT53E384M32D2DS-046AIT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

95 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DT-046AIT:E by Micron Technology

MT53E768M32D4DT-046AIT:E

Micron Technology

Micron Technology's MT53E768M32D4DT-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features common I/O type, self-refresh mode, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.95 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DE-046AAT:E by Micron Technology

MT53E768M32D4DE-046AAT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AAT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency. The package style is grid array with thin profile, making it ideal for space-constrained designs.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

105 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2FW-046AIT:E by Micron Technology

MT53E384M32D2FW-046AIT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Equivalence Code: BGA200,12X20,32/25;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

95 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E768M32D4DE-046AIT:E by Micron Technology

MT53E768M32D4DE-046AIT:E

Micron Technology

Micron Technology's MT53E768M32D4DE-046AIT:E is a LPDDR4 DRAM with 768MX32 organization, operating at 2133 MHz. It features self-refresh and common I/O type, suitable for industrial applications requiring high memory density and fast clock frequency.

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

25769803776 bit

LPDDR4 DRAM

32

1

1

200

805306368 words

768M

SYNCHRONOUS

95 Cel

-40 Cel

768MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.14 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2DS-046AAT:E by Micron Technology

MT53E384M32D2DS-046AAT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 384M;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

105 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

AEC-Q100

.8 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT53E384M32D2FW-046AAT:E by Micron Technology

MT53E384M32D2FW-046AAT:E

Micron Technology

LPDDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: TFBGA; Package Shape: RECTANGULAR; Input/Output Type: COMMON;

MULTI BANK PAGE BURST

SELF REFRESH, IT ALSO REQUIRES 1.8V NOMINAL SUPPLY, TERM PITCH-MAX

2133 MHz

COMMON

16,32

R-PBGA-B200

14.5 mm

12884901888 bit

LPDDR4 DRAM

32

1

1

200

402653184 words

384M

SYNCHRONOUS

105 Cel

-40 Cel

384MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA200,12X20,32/25

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.1 mm

YES

16,32

1.17 V

1.06 V

1.1

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

10 mm

MT48LC16M16A2P-6AXIT:GTR by Micron Technology

MT48LC16M16A2P-6AXIT:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6AXIT:GTR is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. Ideal for industrial applications requiring high-speed memory operations in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

GULL WING

.8 mm

DUAL

10.16 mm

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution

IS43QR16256B-083RBLI-TR

Integrated Silicon Solution

IS43QR16256B-083RBLI-TR by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.48 MHz clock frequency. It features synchronous operation, self-refresh capability, and common input/output type. Ideal for industrial applications requiring high memory density and fast data processing.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

1200.48 MHz

COMMON

8

R-PBGA-B96

13.5 mm

4294967296 bit

DDR4 DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

-40 Cel

256MX16

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

8

.058 Amp

375 mA

1.26 V

1.14 V

1.2

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

7.5 mm