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INDUSTRIAL DRAM 537

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46H256M32L4JV-5IT:B by Micron Technology

MT46H256M32L4JV-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

8589934592 bit

DDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT46H256M32L4JV-6WT:B by Micron Technology

MT46H256M32L4JV-6WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Maximum Access Time: 5 ns;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

8589934592 bit

DDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32LFCX-5IT:B by Micron Technology

MT46H64M32LFCX-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32LFMA-5IT:B by Micron Technology

MT46H64M32LFMA-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Package Shape: SQUARE; Additional Features: AUTO/SELF REFRESH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

S-PBGA-B168

e1

12 mm

2147483648 bit

DDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

.7 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT48LC16M8A2BB-6AAAT:L by Micron Technology

MT48LC16M8A2BB-6AAAT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2BB-6AAIT:L by Micron Technology

MT48LC16M8A2BB-6AAIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 16 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2P-6AAIT:L by Micron Technology

MT48LC16M8A2P-6AAIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Length: 22.22 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M16A2B4-6AAIT:L by Micron Technology

MT48LC8M16A2B4-6AAIT:L

Micron Technology

Micron Technology's MT48LC8M16A2B4-6AAIT:L is a 8MX16 Synchronous DRAM with 134217728 bit memory density. Operating at 3.3V, it offers a max access time of 5.4 ns and features self-refresh capability. Ideal for industrial applications requiring high-speed and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

VFBGA

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

AEC-Q100

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC8M16A2P-6AAIT:L by Micron Technology

MT48LC8M16A2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT46H16M32LFB5-6AT:C by Micron Technology

MT46H16M32LFB5-6AT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFB5-6IT:C by Micron Technology

MT46H16M32LFB5-6IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

105 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6AT:C by Micron Technology

MT46H32M16LFBF-6AT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AT:C is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. Operating at 105 °C max temp, it suits industrial applications requiring fast access times of 5 ns. With synchronous operation and self-refresh capability, this DRAM offers reliable performance in various electronic systems.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6IT:C by Micron Technology

MT46H32M16LFBF-6IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

110 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48H16M32LFB5-75IT:C by Micron Technology

MT48H16M32LFB5-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

536870912 bit

DDR DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

95 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48H32M16LFB4-75IT:C by Micron Technology

MT48H32M16LFB4-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

536870912 bit

DDR DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT46V32M8P-5BIT:K by Micron Technology

MT46V32M8P-5BIT:K

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

8

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

290 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT8HTF12864HTZ-667H1 by Micron Technology

MT8HTF12864HTZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

SELF CONTAINED REFRESH

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

GOLD

NO LEAD

ZIG-ZAG

30 mm

MT4HTF6464HZ-667H1 by Micron Technology

MT4HTF6464HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

WD-MAX

333 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

.028 Amp

DRAMs

1400 mA

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT48LC32M16A2P-75IT:CTR by Micron Technology

MT48LC32M16A2P-75IT:CTR

Micron Technology

Micron Technology's MT48LC32M16A2P-75IT:CTR is a 32MX16 DRAM with 33554432 words, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at -40 to 85 °C, suitable for industrial applications requiring fast access time of 5.4 ns.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

536870912 bit

SYNCHRONOUS DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT46H4M32LFB5-5IT:K by Micron Technology

MT46H4M32LFB5-5IT:K

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

134217728 bit

DDR1 DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

110 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H4M32LFB5-6IT:K by Micron Technology

MT46H4M32LFB5-6IT:K

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

134217728 bit

DDR1 DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M16LFBF-5IT:K by Micron Technology

MT46H8M16LFBF-5IT:K

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

134217728 bit

DDR1 DRAM

16

1

1

60

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

95 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H4M32LFB5-6IT:K by Micron Technology

MT48H4M32LFB5-6IT:K

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0002 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H4M32LFB5-75IT:K by Micron Technology

MT48H4M32LFB5-75IT:K

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0002 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H8M16LFB4-6IT:K by Micron Technology

MT48H8M16LFB4-6IT:K

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0002 Amp

DRAMs

80 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H8M16LFB4-75IT:K by Micron Technology

MT48H8M16LFB4-75IT:K

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0002 Amp

DRAMs

70 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT46H64M16LFBF-6IT:B by Micron Technology

MT46H64M16LFBF-6IT:B

Micron Technology

MT46H64M16LFBF-6IT:B by Micron Technology is a 64MX16 DDR1 DRAM with 1073741824 bit memory density. It operates at 166 MHz with a supply voltage of 1.8V, suitable for industrial applications requiring fast data access and low standby current consumption. The package style is grid array, very thin profile, fine pitch, making it ideal for space-constrained designs.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

1073741824 bit

DDR1 DRAM

16

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

120 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT47H64M16HR-25EIT:HTR by Micron Technology

MT47H64M16HR-25EIT:HTR

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:HTR is a DDR2 DRAM with 64MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density, fast access time of 0.4ns, and multi-bank page burst access mode.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

3

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41J64M16JT-15EXIT:G by Micron Technology

MT41J64M16JT-15EXIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EXIT:G is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M32LFB5-5IT:H by Micron Technology

MT46H8M32LFB5-5IT:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

268435456 bit

LPDDR1 DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8,16

.0003 Amp

DRAMs

180 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H8M32LFB5-6IT:H by Micron Technology

MT46H8M32LFB5-6IT:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

268435456 bit

LPDDR1 DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

2,4,8,16

.0003 Amp

DRAMs

120 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFCX-5IT:B by Micron Technology

MT46H16M32LFCX-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

125 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT46H16M32LFCX-6IT:B by Micron Technology

MT46H16M32LFCX-6IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

115 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H4M16LFB4-8IT by Micron Technology

MT48H4M16LFB4-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

80 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H4M16LFF4-10IT by Micron Technology

MT48H4M16LFF4-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

1,2,4,8

S-PBGA-B54

e0

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

80 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

8 mm

MT48H4M16LFF4-8IT by Micron Technology

MT48H4M16LFF4-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e0

8 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

80 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

8 mm

MT48H8M16LFB4-8IT:J by Micron Technology

MT48H8M16LFB4-8IT:J

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

120 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H8M16LFF4-10IT by Micron Technology

MT48H8M16LFF4-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

1,2,4,8

S-PBGA-B54

e0

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

120 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

8 mm

MT48H8M16LFF4-8IT by Micron Technology

MT48H8M16LFF4-8IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

125 MHz

COMMON

1,2,4,8

S-PBGA-B54

e0

8 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

120 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN LEAD

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6AT:B by Micron Technology

MT46H32M16LFBF-6AT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC8M32B2F5-7IT by Micron Technology

MT48LC8M32B2F5-7IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e0

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

235

3.3

Not Qualified

4096

1 mm

YES

1,2,4,8,FP

.0012 Amp

DRAMs

295 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Lead (Sn/Pb)

BALL

.8 mm

BOTTOM

30

8 mm

MT46H64M32L2JG-5IT:A by Micron Technology

MT46H64M32L2JG-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.9 mm

YES

2,4,8,16

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32L2JG-6IT:A by Micron Technology

MT46H64M32L2JG-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

.9 mm

YES

2,4,8,16

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

12 mm

MT46H16M16LFBF-5IT:H by Micron Technology

MT46H16M16LFBF-5IT:H

Micron Technology

Micron Technology's MT46H16M16LFBF-5IT:H is a 16MX16 LPDDR1 DRAM with 16777216 words. It operates at 200 MHz, has a memory density of 268435456 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring high-speed data processing in compact devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M16LFBF-6IT:H by Micron Technology

MT46H16M16LFBF-6IT:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFCG-6IT:B by Micron Technology

MT46H16M32LFCG-6IT:B

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 152; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

S-PBGA-B152

14 mm

536870912 bit

LPDDR1 DRAM

32

1

1

152

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA152,21X21,25

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

14 mm

MT46H32M32LFCG-6IT:A by Micron Technology

MT46H32M32LFCG-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 152; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

S-PBGA-B152

14 mm

1073741824 bit

LPDDR1 DRAM

32

1

1

152

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA152,21X21,25

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

14 mm

MT46H64M32L2CG-6IT:A by Micron Technology

MT46H64M32L2CG-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 152; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

S-PBGA-B152

14 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

152

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA152,21X21,25

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

14 mm