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8192 DRAM 707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT46V32M8P-5BL:M by Micron Technology

MT46V32M8P-5BL:M

Micron Technology

DDR1 DRAM; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Peak Reflow Temperature (C): 260;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

8

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

8192

1.2 mm

YES

2,4,8

.004 Amp

290 mA

2.7 V

2.5 V

2.6

YES

CMOS

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

IS43LR32160C-6BLI by Integrated Silicon Solution

IS43LR32160C-6BLI

Integrated Silicon Solution

IS43LR32160C-6BLI by Integrated Silicon Solution is a 16MX32 DDR1 DRAM with 166 MHz clock frequency. Operating at 1.8V, it offers 5.5 ns access time and supports four bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing capabilities.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution

IS46TR16256AL-125KBLA2

Integrated Silicon Solution

IS46TR16256AL-125KBLA2 by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it offers 8192 refresh cycles and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

MULTI BANK PAGE BURST

.1 ns

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

800 MHz

COMMON

4,8

R-PBGA-B96

13 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

105 Cel

-40 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

AEC-Q100

1.2 mm

YES

4,8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT18VDDF12872G-335D3 by Micron Technology

MT18VDDF12872G-335D3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

166 MHz

COMMON

R-PDMA-N184

e4

9663676416 bit

DDR DRAM MODULE

72

184

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

.09 Amp

DRAMs

7290 mA

2.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1.27 mm

DUAL

MT48LC16M16A2P-7E:G by Micron Technology

MT48LC16M16A2P-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2P-7E:G is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 143 MHz clock frequency. Ideal for commercial applications requiring fast access time and low standby current consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.8 mm

DUAL

30

10.16 mm

MT41K1G8TRF-125IT:E by Micron Technology

MT41K1G8TRF-125IT:E

Micron Technology

Micron Technology's MT41K1G8TRF-125IT:E is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and operates at 1.35V, suitable for applications requiring high-speed synchronous memory with low power consumption.

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e0

11.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K1G4RH-107:E by Micron Technology

MT41K1G4RH-107:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

4

1

1

78

1073741824 words

1G

SYNCHRONOUS

95 Cel

0 Cel

1GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

251 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-107:E by Micron Technology

MT41K256M16HA-107:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

274 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-107IT:E by Micron Technology

MT41K256M16HA-107IT:E

Micron Technology

Micron Technology's MT41K256M16HA-107IT:E is a DDR3L DRAM with 256MX16 organization, operating at 933 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

274 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16RE-15EIT:D by Micron Technology

MT41K256M16RE-15EIT:D

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.02 Amp

DRAMs

285 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

10 mm

MT41K512M8RH-107:E by Micron Technology

MT41K512M8RH-107:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

3

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

251 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT41K512M8RH-107IT:E by Micron Technology

MT41K512M8RH-107IT:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

251 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125IT:E by Micron Technology

MT41K512M8RH-125IT:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT42L128M32D1LF-25WT:A by Micron Technology

MT42L128M32D1LF-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO REQUIRES 1.8 V SUPPLY

400 MHz

COMMON

4,8,16

S-PBGA-B168

e1

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

168

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.75 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT16HTF25664HZ-667H1 by Micron Technology

MT16HTF25664HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PDMA-N200

17179869184 bit

DDR DRAM MODULE

64

200

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

.112 Amp

DRAMs

3440 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT16HTF25664HZ-800H1 by Micron Technology

MT16HTF25664HZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.112 Amp

DRAMs

3760 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT18HTF25672PKZ-80EH1 by Micron Technology

MT18HTF25672PKZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N244

19327352832 bit

72

244

268435456 words

256M

70 Cel

0 Cel

256MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

Other Memory ICs

4230 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT36HTF51272FZ-667H1D6 by Micron Technology

MT36HTF51272FZ-667H1D6

Micron Technology

DRAMs; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Density: 38654705664 bit;

333 MHz

COMMON

R-PDMA-N240

e4

38654705664 bit

72

240

536870912 words

512M

512MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,1.8

Not Qualified

8192

Other Memory ICs

4480 mA

NO

CMOS

GOLD

NO LEAD

1 mm

DUAL

MT47H256M8THN-3:H by Micron Technology

MT47H256M8THN-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PBGA-B63

2147483648 bit

DDR2 DRAM

8

63

268435456 words

256M

85 Cel

0 Cel

256MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

.014 Amp

DRAMs

192 mA

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

MT47H512M4THN-3:H by Micron Technology

MT47H512M4THN-3:H

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

333 MHz

COMMON

R-PBGA-B63

2147483648 bit

DDR2 DRAM

4

63

536870912 words

512M

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

.014 Amp

DRAMs

192 mA

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

MT8HTF12864HDZ-667H1 by Micron Technology

MT8HTF12864HDZ-667H1

Micron Technology

MT8HTF12864HDZ-667H1 by Micron Technology is a 128MX64 DDR DRAM MODULE with 400 MHz clock frequency. It operates at 1.8V, has 200 terminals, and supports DUAL BANK PAGE BURST access mode. Ideal for applications requiring high-speed synchronous memory with a memory density of 8589934592 bits.

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

1430 mA

3.6 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.45 mm

ZIG-ZAG

3.8 mm

MT8HTF12864HDZ-800H1 by Micron Technology

MT8HTF12864HDZ-800H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.056 Amp

DRAMs

1790 mA

3.6 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.45 mm

ZIG-ZAG

3.8 mm

MT9HTF12872PZ-667H1 by Micron Technology

MT9HTF12872PZ-667H1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e4

9663676416 bit

72

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1665 mA

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

MT9HTF12872RHZ-80EH1 by Micron Technology

MT9HTF12872RHZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N200

9663676416 bit

72

200

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1890 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT9HVF12872PKZ-80EH1 by Micron Technology

MT9HVF12872PKZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

400 MHz

COMMON

R-PDMA-N244

9663676416 bit

72

244

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

3015 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

30

MT48LC16M16A2B4-7E:G by Micron Technology

MT48LC16M16A2B4-7E:G

Micron Technology

Micron Technology's MT48LC16M16A2B4-7E:G is a 16MX16 DRAM with 3.3V supply, 143 MHz clock frequency, and 5.4 ns access time. Ideal for commercial applications requiring high-speed memory with common I/O type and self-refresh capability in a compact grid array package.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

150 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC32M8A2P-6AIT:G by Micron Technology

MT48LC32M8A2P-6AIT:G

Micron Technology

Micron Technology's MT48LC32M8A2P-6AIT:G is a 32MX8 DRAM with 3.3V supply, operating at 167MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a small outline package style.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

167 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

8

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.0025 Amp

DRAMs

100 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.8 mm

DUAL

10.16 mm

MT41K512M16TNA-107:E by Micron Technology

MT41K512M16TNA-107:E

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Memory Width: 16;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

934.5 MHz

COMMON

4,8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

8192

1.2 mm

YES

4,8

1.283 V

1.45 V

1.283 V

1.35

YES

CMOS

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT41K512M16TNA-125IT:E by Micron Technology

MT41K512M16TNA-125IT:E

Micron Technology

Micron Technology's MT41K512M16TNA-125IT:E is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

95 Cel

-40 Cel

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

1.283 V

DRAMs

1.425 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT41K128M16HA-15EIT:D by Micron Technology

MT41K128M16HA-15EIT:D

Micron Technology

DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.255 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

14 mm

2147483648 bit

DDR3L DRAM

16

1

1

96

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

425 mA

1.45 V

1.283 V

1.35

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT42L128M32D1GU-18WT:A by Micron Technology

MT42L128M32D1GU-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT42L128M32D1LH-25WT:A by Micron Technology

MT42L128M32D1LH-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B216

12 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.65 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2LL-18WT:A by Micron Technology

MT42L128M64D2LL-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B216

e1

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2LL-25WT:A by Micron Technology

MT42L128M64D2LL-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B216

e1

12 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

216

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

12 mm

MT42L128M64D2MP-25WT:A by Micron Technology

MT42L128M64D2MP-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 220; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B220

14 mm

8589934592 bit

LPDDR2 DRAM

64

1

1

220

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA220,27X27,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

MT42L256M32D2LG-25WT:A by Micron Technology

MT42L256M32D2LG-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

12 mm

MT42L256M32D2LK-18WT:A by Micron Technology

MT42L256M32D2LK-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 216; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B216

12 mm

8589934592 bit

LPDDR2 DRAM

32

1

1

216

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA216,29X29,16

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.8 mm

YES

4,8,16

.0001 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.4 mm

BOTTOM

12 mm

MT42L256M64D4EV-18WT:A by Micron Technology

MT42L256M64D4EV-18WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

533 MHz

COMMON

4,8,16

S-PBGA-B253

e1

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

220 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.5 mm

BOTTOM

11 mm

MT42L256M64D4EV-25WT:A by Micron Technology

MT42L256M64D4EV-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 253; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B253

11 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

253

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

TFBGA

BGA253,17X17,20

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1.2 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

11 mm

MT42L256M64D4LD-25WT:A by Micron Technology

MT42L256M64D4LD-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 220; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

MULTI BANK PAGE BURST

5.5 ns

SELF REFRESH; IT ALSO REQUIRES 1.2V NOM

400 MHz

COMMON

4,8,16

S-PBGA-B220

14 mm

17179869184 bit

LPDDR2 DRAM

64

1

1

220

268435456 words

256M

SYNCHRONOUS

85 Cel

-30 Cel

256MX64

3-STATE

PLASTIC/EPOXY

VFBGA

BGA220,27X27,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

1 mm

YES

4,8,16

.002 Amp

DRAMs

194 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

14 mm

W9751G6KB25I by Winbond Electronics

W9751G6KB25I

Winbond Electronics

W9751G6KB25I by Winbond Electronics is a DDR2 DRAM with 32MX16 organization, operating at up to 400 MHz. It features a 32M word code, operates at 1.8V, and has a max clock frequency of 400 MHz. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.008 Amp

DRAMs

200 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H256M32L4JV-5WT:B by Micron Technology

MT46H256M32L4JV-5WT:B

Micron Technology

DDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

e1

12 mm

8589934592 bit

DDR1 DRAM

32

1

1

168

268435456 words

256M

SYNCHRONOUS

85 Cel

-25 Cel

256MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.5 mm

BOTTOM

30

12 mm

IS43TR16128B-15HBLI by Integrated Silicon Solution

IS43TR16128B-15HBLI

Integrated Silicon Solution

IS43TR16128B-15HBLI by Integrated Silicon Solution is a 128MX16 DDR3 DRAM with 667 MHz clock frequency. It operates asynchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

.255 ns

AUTO/SELF REFRESH

667 MHz

COMMON

4,8

R-PBGA-B96

e1

13 mm

2147483648 bit

DDR3 DRAM

16

1

1

96

134217728 words

128M

ASYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

4,8

.014 Amp

DRAMs

286 mA

1.575 V

1.425 V

1.5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

W971GG6KB25I by Winbond Electronics

W971GG6KB25I

Winbond Electronics

Winbond Electronics' W971GG6KB25I is a 64MX16 DDR2 DRAM with 400 MHz clock frequency, 1.8V supply, and 84 terminals in a grid array package. It operates synchronously with self-refresh capability and offers multi-bank page burst access mode. Ideal for high-speed memory applications requiring low power consumption and compact design.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.008 Amp

DRAMs

185 mA

1.9 V

1.7 V

1.8

YES

CMOS

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT8KTF25664HZ-1G6M1 by Micron Technology

MT8KTF25664HZ-1G6M1

Micron Technology

Micron Technology's MT8KTF25664HZ-1G6M1 is a 256MX64 DDR DRAM MODULE with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for applications requiring high-speed memory performance in commercial temperature environments.

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

800 MHz

COMMON

R-XZMA-N204

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.35

Not Qualified

8192

30.15 mm

YES

.096 Amp

DRAMs

1760 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT46H128M16LFDD-48AIT:C by Micron Technology

MT46H128M16LFDD-48AIT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B60

9 mm

2147483648 bit

LPDDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

AEC-Q100

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8SH-187E:M by Micron Technology

MT47H128M8SH-187E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H256M4SH-25E:M by Micron Technology

MT47H256M4SH-25E:M

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

1073741824 bit

DDR2 DRAM

4

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm