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8192 DRAM 707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC16M16A2TG-75IT:DTR by Micron Technology

MT48LC16M16A2TG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT41K256M4DA-107:J by Micron Technology

MT41K256M4DA-107:J

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

1073741824 bit

DDR3L DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

DRAMs

162 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT46H128M16LFDD-48WT:C by Micron Technology

MT46H128M16LFDD-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B60

9 mm

2147483648 bit

LPDDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

8 mm

MT46H256M32L4SA-48WT:C by Micron Technology

MT46H256M32L4SA-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 168; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

5 ns

208 MHz

COMMON

2,4,8,16

S-PBGA-B168

8589934592 bit

LPDDR1 DRAM

32

168

268435456 words

256M

85 Cel

-25 Cel

256MX32

3-STATE

PLASTIC/EPOXY

FBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, FINE PITCH

260

1.8

Not Qualified

8192

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.8

YES

CMOS

OTHER

BALL

.5 mm

BOTTOM

30

MT46H16M32LFB5-6IT:C by Micron Technology

MT46H16M32LFB5-6IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

105 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6IT:C by Micron Technology

MT46H32M16LFBF-6IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

110 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48H16M32LFB5-75IT:C by Micron Technology

MT48H16M32LFB5-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

536870912 bit

DDR DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

95 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48H32M16LFB4-75IT:C by Micron Technology

MT48H32M16LFB4-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

S-PBGA-B54

e1

8 mm

536870912 bit

DDR DRAM

16

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT46V32M8P-5BIT:K by Micron Technology

MT46V32M8P-5BIT:K

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

8

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

290 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT41J128M8JP-125:G by Micron Technology

MT41J128M8JP-125:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.1 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

8

3

1

1

78

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

600 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

8 mm

MT41J128M8JP-15E:G by Micron Technology

MT41J128M8JP-15E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

8

1

1

78

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

490 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J128M8JP-15EIT:G by Micron Technology

MT41J128M8JP-15EIT:G

Micron Technology

DDR3 DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.575 V;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

8

1

1

78

134217728 words

128M

SYNCHRONOUS

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

490 mA

1.575 V

1.425 V

1.5

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J256M4JP-125:G by Micron Technology

MT41J256M4JP-125:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.1 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

400 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J256M4JP-15E:G by Micron Technology

MT41J256M4JP-15E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B78

e1

11.5 mm

1073741824 bit

DDR3 DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

DRAMs

315 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J64M16JT-125:G by Micron Technology

MT41J64M16JT-125:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.1 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

3

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

300 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J64M16JT-15E:G by Micron Technology

MT41J64M16JT-15E:G

Micron Technology

MT41J64M16JT-15E:G by Micron Technology is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Ideal for applications requiring high-speed synchronous operation and common I/O type, such as servers, workstations, and networking equipment.

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

3

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

265 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

8 mm

MT41J64M16JT-15EIT:G by Micron Technology

MT41J64M16JT-15EIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a 1.5V supply voltage and offers 67108864 words of memory. Suitable for applications requiring high-speed synchronous memory access in compact devices.

MULTI BANK PAGE BURST

.125 ns

AUTO/SELF REFRESH

667 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

265 mA

1.575 V

1.425 V

1.5

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41J64M16JT-187E:G by Micron Technology

MT41J64M16JT-187E:G

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.15 ns

AUTO/SELF REFRESH

533 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3 DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

300 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT18HTF25672PDZ-667H1 by Micron Technology

MT18HTF25672PDZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

SELF CONTAINED REFRESH; WD-MAX

333 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.126 Amp

DRAMs

1728 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

4 mm

MT4HTF6464HZ-667H1 by Micron Technology

MT4HTF6464HZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

WD-MAX

333 MHz

COMMON

R-XZMA-N200

e3

67.6 mm

4294967296 bit

DDR DRAM MODULE

64

1

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

.028 Amp

DRAMs

1400 mA

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT4JSF12864HZ-1G4D1 by Micron Technology

MT4JSF12864HZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.255 ns

WD-MAX

667 MHz

COMMON

R-XDMA-N204

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

204

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

NOT SPECIFIED

1.5

Not Qualified

8192

30.15 mm

.048 Amp

DRAMs

1700 mA

1.45 V

1.283 V

1.35

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

NOT SPECIFIED

2.45 mm

MT4JTF12864AZ-1G4D1 by Micron Technology

MT4JTF12864AZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

WD-MAX

667 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

30.5 mm

.048 Amp

DRAMs

1780 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

1 mm

DUAL

2.7 mm

MT16HTF12864AY-667D4 by Micron Technology

MT16HTF12864AY-667D4

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

8589934592 bit

DDR DRAM MODULE

64

240

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.112 Amp

DRAMs

1976 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT4HTF3264HY-667D3 by Micron Technology

MT4HTF3264HY-667D3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

2147483648 bit

DDR DRAM MODULE

64

200

33554432 words

32M

70 Cel

0 Cel

32MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT46H64M16LFBF-6IT:B by Micron Technology

MT46H64M16LFBF-6IT:B

Micron Technology

MT46H64M16LFBF-6IT:B by Micron Technology is a 64MX16 DDR1 DRAM with 1073741824 bit memory density. It operates at 166 MHz with a supply voltage of 1.8V, suitable for industrial applications requiring fast data access and low standby current consumption. The package style is grid array, very thin profile, fine pitch, making it ideal for space-constrained designs.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

1073741824 bit

DDR1 DRAM

16

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

120 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT4VDDT1664HY-335F3 by Micron Technology

MT4VDDT1664HY-335F3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.7 ns

167 MHz

COMMON

R-PDMA-N200

1073741824 bit

DDR DRAM MODULE

64

200

16777216 words

16M

70 Cel

0 Cel

16MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

DRAMs

1760 mA

2.5

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT8VDDT6464HDY-335F2 by Micron Technology

MT8VDDT6464HDY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

536870912 bit

DDR DRAM MODULE

8

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

31.9 mm

YES

.04 Amp

DRAMs

1640 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.61 mm

DUAL

3.8 mm

MT8VDDT6464HY-335F3 by Micron Technology

MT8VDDT6464HY-335F3

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

536870912 bit

DDR DRAM MODULE

8

1

1

200

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

31.9 mm

YES

.04 Amp

DRAMs

3240 mA

2.6 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

DUAL

3.8 mm

MT9VDDF6472Y-335F1 by Micron Technology

MT9VDDF6472Y-335F1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XDMA-N184

e4

133.35 mm

536870912 bit

DDR DRAM MODULE

8

1

1

184

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

28.73 mm

YES

.045 Amp

DRAMs

3645 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

3.175 mm

MT46H16M32LFCX-5:B by Micron Technology

MT46H16M32LFCX-5:B

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

125 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT46H16M32LFCX-5IT:B by Micron Technology

MT46H16M32LFCX-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

125 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT46H16M32LFCX-6:B by Micron Technology

MT46H16M32LFCX-6:B

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

115 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

9 mm

MT46H16M32LFCX-6IT:B by Micron Technology

MT46H16M32LFCX-6IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

115 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT46H64M32L2JG-5IT:A by Micron Technology

MT46H64M32L2JG-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

S-PBGA-B168

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

.9 mm

YES

2,4,8,16

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

12 mm

MT46H64M32L2JG-6IT:A by Micron Technology

MT46H64M32L2JG-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 168; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

S-PBGA-B168

12 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

168

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA168,23X23,20

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

.9 mm

YES

2,4,8,16

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.5 mm

BOTTOM

30

12 mm

MT47H32M16HR-3:F by Micron Technology

MT47H32M16HR-3:F

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

3

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

350 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT4VDDT3264HY-40BF2 by Micron Technology

MT4VDDT3264HY-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XDMA-N200

e4

67.6 mm

2147483648 bit

DDR DRAM MODULE

64

1

1

200

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

1920 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

DUAL

2.45 mm

MT9VDDT6472AY-40BF1 by Micron Technology

MT9VDDT6472AY-40BF1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

R-XDMA-N184

e4

133.35 mm

4831838208 bit

DDR DRAM MODULE

72

1

1

184

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX72

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.75 mm

YES

.045 Amp

Other Memory ICs

4050 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

3.18 mm

MT46H16M16LFBF-5:H by Micron Technology

MT46H16M16LFBF-5:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.0003 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M16LFBF-5IT:H by Micron Technology

MT46H16M16LFBF-5IT:H

Micron Technology

Micron Technology's MT46H16M16LFBF-5IT:H is a 16MX16 LPDDR1 DRAM with 16777216 words. It operates at 200 MHz, has a memory density of 268435456 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring high-speed data processing in compact devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

100 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M16LFBF-6:H by Micron Technology

MT46H16M16LFBF-6:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M16LFBF-6IT:H by Micron Technology

MT46H16M16LFBF-6IT:H

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

268435456 bit

LPDDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFCG-6IT:B by Micron Technology

MT46H16M32LFCG-6IT:B

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 152; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

S-PBGA-B152

14 mm

536870912 bit

LPDDR1 DRAM

32

1

1

152

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA152,21X21,25

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

14 mm

MT46H32M32LFCG-6IT:A by Micron Technology

MT46H32M32LFCG-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 152; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

S-PBGA-B152

14 mm

1073741824 bit

LPDDR1 DRAM

32

1

1

152

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA152,21X21,25

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

14 mm

MT46H64M32L2CG-6IT:A by Micron Technology

MT46H64M32L2CG-6IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 152; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: SQUARE;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8

S-PBGA-B152

14 mm

2147483648 bit

LPDDR1 DRAM

32

1

1

152

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA152,21X21,25

SQUARE

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8

DRAMs

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.65 mm

BOTTOM

14 mm

MT48H8M32LFB5-10 by Micron Technology

MT48H8M32LFB5-10

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.003 Amp

DRAMs

110 mA

1.9 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT48H8M32LFB5-10IT by Micron Technology

MT48H8M32LFB5-10IT

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

104 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.003 Amp

DRAMs

110 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V128M8P-75:A by Micron Technology

MT46V128M8P-75:A

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.75 ns

AUTO/SELF REFRESH

133 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

1073741824 bit

DDR1 DRAM

8

1

1

66

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

2.5

Not Qualified

8192

1.2 mm

YES

2,4,8

.01 Amp

DRAMs

485 mA

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm