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8192 DRAM 707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT9HTF6472PKZ-667G1 by Micron Technology

MT9HTF6472PKZ-667G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 244; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N244

e3

4831838208 bit

DDR DRAM MODULE

72

1

244

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM244,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

DRAMs

1260 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT9HVF12872PZ-80EH1 by Micron Technology

MT9HVF12872PZ-80EH1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.4 ns

400 MHz

COMMON

R-PDMA-N240

e3

9663676416 bit

72

1

240

134217728 words

128M

70 Cel

0 Cel

128MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1890 mA

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9HVF6472PZ-667G1 by Micron Technology

MT9HVF6472PZ-667G1

Micron Technology

DRAMs; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

e3

4831838208 bit

72

1

240

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.063 Amp

Other Memory ICs

1.8

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

1 mm

DUAL

MT9JSF25672AZ-1G4D1 by Micron Technology

MT9JSF25672AZ-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.255 ns

SELF REFRESH; WD-MAX

667 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

30.5 mm

YES

.108 Amp

Other Memory ICs

3285 mA

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1 mm

DUAL

2.7 mm

MT16JTF25664HZ-1G4G1 by Micron Technology

MT16JTF25664HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

e3

17179869184 bit

DDR DRAM MODULE

64

1

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

4016 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT16JTF25664HZ-1G6G1 by Micron Technology

MT16JTF25664HZ-1G6G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

800 MHz

COMMON

R-PDMA-N204

e3

17179869184 bit

DDR DRAM MODULE

64

1

204

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.192 Amp

DRAMs

4896 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT47H512M8WTR-3:C by Micron Technology

MT47H512M8WTR-3:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 63; Package Code: FBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

COMMON

R-PBGA-B63

e3

4294967296 bit

DDR2 DRAM

8

1

63

536870912 words

512M

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

FBGA

BGA63,9X11,32

RECTANGULAR

GRID ARRAY, FINE PITCH

1.8

Not Qualified

8192

DRAMs

1.8

YES

CMOS

OTHER

MATTE TIN

BALL

.8 mm

BOTTOM

MT8JTF12864HZ-1G4G1 by Micron Technology

MT8JTF12864HZ-1G4G1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.255 ns

667 MHz

COMMON

R-PDMA-N204

e3

8589934592 bit

DDR DRAM MODULE

64

1

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

3920 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

MT8JTF12864HZ-1G6G1 by Micron Technology

MT8JTF12864HZ-1G6G1

Micron Technology

Micron Technology's MT8JTF12864HZ-1G6G1 is a 128MX64 DDR DRAM MODULE with 204 terminals, operating at 800 MHz. It has a memory density of 8589934592 bits and supports a max clock frequency of 800 MHz. Ideal for commercial applications requiring high-speed data processing and storage capabilities.

.225 ns

800 MHz

COMMON

R-PDMA-N204

e3

8589934592 bit

DDR DRAM MODULE

64

1

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5

Not Qualified

8192

.096 Amp

DRAMs

4800 mA

1.5

NO

CMOS

COMMERCIAL

MATTE TIN

NO LEAD

.6 mm

DUAL

IS42S16320D-7BLI-TR by Integrated Silicon Solution

IS42S16320D-7BLI-TR

Integrated Silicon Solution

IS42S16320D-7BLI-TR by Integrated Silicon Solution is a 32MX16 DRAM with synchronous operation, self-refresh capability, and common I/O type. It features a max clock frequency of 143 MHz and is ideal for industrial applications requiring high-speed memory access in thin profile packages.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B54

e1

13 mm

536870912 bit

CACHE DRAM MODULE

16

3

1

1

54

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

220 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

IS42S32160D-7BLI-TR by Integrated Silicon Solution

IS42S32160D-7BLI-TR

Integrated Silicon Solution

IS42S32160D-7BLI-TR by Integrated Silicon Solution is a 16MX32 DRAM with 3.3V supply, operating at 143 MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and common I/O type for efficient data processing.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e3

13 mm

536870912 bit

CACHE DRAM MODULE

32

1

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.004 Amp

DRAMs

300 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.8 mm

BOTTOM

8 mm

MT41K1G8TRF-125:E by Micron Technology

MT41K1G8TRF-125:E

Micron Technology

MT41K1G8TRF-125:E by Micron Technology is a DDR3L DRAM with 1GX8 organization, operating at 800 MHz. It features a thin profile grid array package and consumes up to 243 mA of current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e0

11.5 mm

8589934592 bit

DDR3L DRAM

8

1

1

78

1073741824 words

1G

SYNCHRONOUS

85 Cel

0 Cel

1GX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

9.5 mm

MT41K2G4TRF-125:E by Micron Technology

MT41K2G4TRF-125:E

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.225 ns

SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

11.5 mm

8589934592 bit

DDR3L DRAM

4

1

1

78

2147483648 words

2G

SYNCHRONOUS

85 Cel

0 Cel

2GX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9.5 mm

IS43DR16160A-3DBLI-TR by Integrated Silicon Solution

IS43DR16160A-3DBLI-TR

Integrated Silicon Solution

IS43DR16160A-3DBLI-TR by Integrated Silicon Solution is a 16MX16 DDR2 DRAM with 333 MHz clock frequency. Operating at 1.8V, it offers 16M words and supports synchronous mode with self-refresh capability. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.005 Amp

DRAMs

330 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

W9725G6KB25I by Winbond Electronics

W9725G6KB25I

Winbond Electronics

Winbond Electronics' W9725G6KB25I is a DDR2 DRAM with 16Mx16 organization, operating at 400MHz. It features a 1.8V supply voltage, 84 terminals in a thin profile grid array package, and supports synchronous operation. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

268435456 bit

DDR2 DRAM

16

1

1

84

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.006 Amp

DRAMs

135 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9825G6JB-6I by Winbond Electronics

W9825G6JB-6I

Winbond Electronics

W9825G6JB-6I by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for industrial applications requiring fast data processing and common I/O type. With a thin profile package style and self-refresh capability, it offers reliable performance in various electronic devices.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

W9825G6JB-6 by Winbond Electronics

W9825G6JB-6

Winbond Electronics

W9825G6JB-6 by Winbond Electronics is a 16MX16 Synchronous DRAM with 16777216 words and 268435456 bit memory density. It operates at a max clock frequency of 166 MHz, suitable for applications requiring high-speed data processing such as networking equipment and industrial automation systems.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

S-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA54,9X9,32

SQUARE

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

80 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT16HTF51264HZ-800C1 by Micron Technology

MT16HTF51264HZ-800C1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH; WD-MAX

400 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

34359738368 bit

DDR DRAM MODULE

64

1

1

200

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

DRAMs

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT16HTF25664HIZ-667H1 by Micron Technology

MT16HTF25664HIZ-667H1

Micron Technology

Micron Technology's MT16HTF25664HIZ-667H1 is a 256MX64 DDR DRAM MODULE with 333 MHz clock frequency. It operates synchronously at 1.8V, featuring self-refresh capability and dual bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.

DUAL BANK PAGE BURST

SELF REFRESH; WD-MAX

333 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

200

268435456 words

256M

SYNCHRONOUS

85 Cel

-40 Cel

256MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.15 mm

YES

.112 Amp

DRAMs

3440 mA

1.9 V

1.7 V

1.8

NO

CMOS

INDUSTRIAL

Gold (Au)

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT41K512M8RH-125:E by Micron Technology

MT41K512M8RH-125:E

Micron Technology

Micron Technology's MT41K512M8RH-125:E is a DDR3L DRAM with 512MX8 organization, operating at 800 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like smartphones and tablets.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3L DRAM

8

3

1

1

78

536870912 words

512M

SYNCHRONOUS

95 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

220 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT41K256M16HA-125:E by Micron Technology

MT41K256M16HA-125:E

Micron Technology

Micron Technology's MT41K256M16HA-125:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features synchronous operation, self-refresh capability, and a low supply voltage of 1.35V. Ideal for applications requiring high-speed memory access in compact electronic devices.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

3

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT18VDDT12872AY-40BF1 by Micron Technology

MT18VDDT12872AY-40BF1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

3-STATE

UNSPECIFIED

DIMM

DIMM184

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

4095 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

1.27 mm

DUAL

4 mm

MT48H16M16LFBF-6:H by Micron Technology

MT48H16M16LFBF-6:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H16M16LFBF-6IT:H by Micron Technology

MT48H16M16LFBF-6IT:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

9 mm

MT48H16M16LFBF-75:H by Micron Technology

MT48H16M16LFBF-75:H

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B54

8 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA54,9X9,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8,FP

.00001 Amp

DRAMs

85 mA

1.95 V

1.7 V

1.8

YES

CMOS

COMMERCIAL

BALL

.8 mm

BOTTOM

9 mm

MT16VDDF12864HY-40BF2 by Micron Technology

MT16VDDF12864HY-40BF2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

.08 Amp

DRAMs

5520 mA

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

3.8 mm

MT4VDDT3264HY-335F2 by Micron Technology

MT4VDDT3264HY-335F2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

167 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

2147483648 bit

DDR DRAM MODULE

64

1

1

200

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.5

Not Qualified

8192

31.9 mm

YES

DRAMs

1620 mA

2.7 V

2.3 V

2.5

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

MT4VDDT3264HY-40BJ1 by Micron Technology

MT4VDDT3264HY-40BJ1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH; WD-MAX

200 MHz

COMMON

R-XZMA-N200

e4

67.6 mm

2147483648 bit

DDR DRAM MODULE

64

1

1

200

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX64

3-STATE

UNSPECIFIED

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

2.6

Not Qualified

8192

31.9 mm

YES

DRAMs

1920 mA

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

.6 mm

ZIG-ZAG

2.45 mm

IS43DR81280B-3DBLI by Integrated Silicon Solution

IS43DR81280B-3DBLI

Integrated Silicon Solution

IS43DR81280B-3DBLI by Integrated Silicon Solution is a 128MX8 DDR2 DRAM with 333 MHz clock frequency, operating at 1.8V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

10.5 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

270 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

8 mm

MT42L128M32D1GU-25WT:A by Micron Technology

MT42L128M32D1GU-25WT:A

Micron Technology

LPDDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 134; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

5.5 ns

SELF CONTAINED REFRESH; ALSO OPERATES AT MINIMUM 1.7 V

400 MHz

COMMON

4,8,16

R-PBGA-B134

e1

11.5 mm

4294967296 bit

LPDDR2 DRAM

32

1

1

134

134217728 words

128M

SYNCHRONOUS

85 Cel

-30 Cel

128MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA134,10X17,25

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.2,1.8

Not Qualified

8192

.7 mm

YES

4,8,16

.0001 Amp

DRAMs

194 mA

1.3 V

1.14 V

1.2

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.65 mm

BOTTOM

10 mm

MT41K256M16HA-125IT:E by Micron Technology

MT41K256M16HA-125IT:E

Micron Technology

Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.016 Amp

DRAMs

243 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

9 mm

MT47H32M16HR-187E:G by Micron Technology

MT47H32M16HR-187E:G

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

0 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16HR-25EAIT:H by Micron Technology

MT47H64M16HR-25EAIT:H

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

AEC-Q100

1.2 mm

YES

4,8

.007 Amp

DRAMs

260 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H64M16HR-3AIT:H by Micron Technology

MT47H64M16HR-3AIT:H

Micron Technology

Micron Technology's MT47H64M16HR-3AIT:H is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package, suitable for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. With AEC-Q100 screening level, it offers reliable performance in automotive electronics.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

NOT SPECIFIED

1.8

Not Qualified

8192

AEC-Q100

1.2 mm

YES

4,8

.007 Amp

DRAMs

230 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

BALL

.8 mm

BOTTOM

NOT SPECIFIED

8 mm

MT47H64M8CF-187E:G by Micron Technology

MT47H64M8CF-187E:G

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

10 mm

536870912 bit

DDR2 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41J256M16HA-093G:E by Micron Technology

MT41J256M16HA-093G:E

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.18 ns

AUTO/SELF REFRESH

1066 MHz

COMMON

8

R-PBGA-B96

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.018 Amp

DRAMs

305 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

9 mm

IS43DR16320C-25DBLI by Integrated Silicon Solution

IS43DR16320C-25DBLI

Integrated Silicon Solution

IS43DR16320C-25DBLI by Integrated Silicon Solution is a DDR2 DRAM with 32MX16 organization, operating at up to 400 MHz. It features a common I/O type, self-refresh capability, and synchronous operation. Ideal for industrial applications requiring high memory density and fast access times.

FOUR BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

536870912 bit

DDR2 DRAM

16

1

1

84

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.013 Amp

DRAMs

370 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT41K512M16TNA-125M:E by Micron Technology

MT41K512M16TNA-125M:E

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

934.5 MHz

COMMON

4,8

R-PBGA-B96

14 mm

8589934592 bit

DDR3L DRAM

16

1

1

96

536870912 words

512M

SYNCHRONOUS

512MX16

PLASTIC/EPOXY

TFBGA

BGA96,6X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

8192

1.2 mm

YES

4,8

1.283 V

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

10 mm

MT41J256M16HA-093:E by Micron Technology

MT41J256M16HA-093:E

Micron Technology

Micron Technology's MT41J256M16HA-093:E is a DDR3 DRAM with 256MX16 organization, operating at 1066 MHz. It features synchronous operation, self-refresh capability, and a max clock frequency of 1066 MHz. Ideal for applications requiring high-speed memory access in devices such as computers and servers.

MULTI BANK PAGE BURST

.18 ns

AUTO/SELF REFRESH

1066 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.018 Amp

DRAMs

305 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT41J256M16HA-107:E by Micron Technology

MT41J256M16HA-107:E

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

95 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.018 Amp

DRAMs

274 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41J256M16HA-125:E by Micron Technology

MT41J256M16HA-125:E

Micron Technology

Micron Technology's MT41J256M16HA-125:E is a DDR3 DRAM with 256MX16 organization, operating at 800 MHz. It features a thin profile grid array package and synchronous operation mode. Ideal for applications requiring high-speed memory access in devices like servers and networking equipment.

MULTI BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

4294967296 bit

DDR3 DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.018 Amp

DRAMs

243 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

9 mm

MT41J512M8RH-093:E by Micron Technology

MT41J512M8RH-093:E

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.18 ns

AUTO/SELF REFRESH

1066 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.5

Not Qualified

8192

1.2 mm

YES

8

.018 Amp

DRAMs

282 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT41J512M8RH-107:E by Micron Technology

MT41J512M8RH-107:E

Micron Technology

DDR3 DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

e1

10.5 mm

4294967296 bit

DDR3 DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.5

Not Qualified

8192

1.2 mm

YES

8

.018 Amp

DRAMs

251 mA

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT41K512M16TNA-125:E by Micron Technology

MT41K512M16TNA-125:E

Micron Technology

Micron Technology's MT41K512M16TNA-125:E is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates synchronously with self-refresh capability. Ideal for applications requiring high-speed memory access in devices such as smartphones, tablets, and networking equipment.

DUAL BANK PAGE BURST

.225 ns

AUTO/SELF REFRESH

800 MHz

COMMON

8

R-PBGA-B96

e1

14 mm

8589934592 bit

DDR3L DRAM

16

3

1

1

96

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA96,9X16,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.35

Not Qualified

8192

1.2 mm

YES

8

.036 Amp

DRAMs

266 mA

1.425 V

1.283 V

1.35

YES

CMOS

OTHER

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

BALL

.8 mm

BOTTOM

30

10 mm

MT41K512M4DA-107:K by Micron Technology

MT41K512M4DA-107:K

Micron Technology

DDR3L DRAM; Temperature Grade: OTHER; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

2147483648 bit

DDR3L DRAM

4

1

1

78

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

.012 Amp

DRAMs

164 mA

1.45 V

1.283 V

1.35

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

8 mm

MT46V16M16CY-5B:M by Micron Technology

MT46V16M16CY-5B:M

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 60; Package Code: TBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PBGA-B60

e1

12.5 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TBGA

BGA60,9X12,40/32

RECTANGULAR

GRID ARRAY, THIN PROFILE

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

TIN SILVER COPPER

BALL

1 mm

BOTTOM

8 mm

MT46V16M16P-5B:M by Micron Technology

MT46V16M16P-5B:M

Micron Technology

Micron Technology's MT46V16M16P-5B:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

3

1

1

66

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V16M16P-5BIT:M by Micron Technology

MT46V16M16P-5BIT:M

Micron Technology

Micron Technology's MT46V16M16P-5BIT:M is a DDR1 DRAM with 16MX16 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast memory access and low power consumption.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSSOP

TSSOP66,.46

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

2.6

Not Qualified

8192

1.2 mm

YES

2,4,8

.004 Amp

DRAMs

175 mA

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm