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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT48LC16M16A2FG-75IT:DTR by Micron Technology

MT48LC16M16A2FG-75IT:DTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words Code: 16M;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B54

e0

14 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC16M16A2P-75IT:DTR by Micron Technology

MT48LC16M16A2P-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2P-75IT:DTR is a 16MX16 Synchronous DRAM with 3.3V supply, operating at 133MHz. It features 16777216 words, FOUR BANK PAGE BURST access mode, and supports sequential burst lengths of 1,2,4,8. Ideal for industrial applications requiring high-speed memory performance in a compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC16M16A2TG-75IT:DTR by Micron Technology

MT48LC16M16A2TG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2TG-75IT:DTR is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers 16777216 words memory density and supports synchronous operation with self-refresh capability.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PDSO-G54

e0

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

3-STATE

PLASTIC/EPOXY

TSOP2

TSOP54,.46,32

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

3.3

Not Qualified

8192

1.2 mm

YES

1,2,4,8,FP

.002 Amp

DRAMs

270 mA

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M16A2TG-7E:DTR by Micron Technology

MT48LC16M16A2TG-7E:DTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Maximum Access Time: 5.4 ns;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC16M8A2TG-75:GTR by Micron Technology

MT48LC16M8A2TG-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Terminal Form: GULL WING;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

70 Cel

0 Cel

16MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC2M32B2TG-6:GTR by Micron Technology

MT48LC2M32B2TG-6:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

32

1

1

86

2097152 words

2M

SYNCHRONOUS

70 Cel

0 Cel

2MX32

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

235

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.5 mm

DUAL

30

10.16 mm

MT48LC4M16A2P-75IT:GTR by Micron Technology

MT48LC4M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75IT:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temp grade, and Gull Wing terminal form. Ideal for applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M16A2TG-75:GTR by Micron Technology

MT48LC4M16A2TG-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Access Mode: FOUR BANK PAGE BURST;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

235

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Lead (Sn/Pb)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC4M16A2TG-7E:GTR by Micron Technology

MT48LC4M16A2TG-7E:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Memory Density: 67108864 bit;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

16

1

1

54

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC4M32B2F5-7IT:GTR by Micron Technology

MT48LC4M32B2F5-7IT:GTR

Micron Technology

Micron Technology's MT48LC4M32B2F5-7IT:GTR is a 3.3V, 4MX32 Synchronous DRAM with 85°C max temp. Ideal for industrial applications, it features self-refresh mode, very thin profile package style, and operates in synchronous mode with a memory width of 32 bits.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

90

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC4M32B2TG-7:GTR by Micron Technology

MT48LC4M32B2TG-7:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 86; Package Code: TSOP2; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 3 V;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

70 Cel

0 Cel

4MX32

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M32B2TG-7IT:GTR by Micron Technology

MT48LC4M32B2TG-7IT:GTR

Micron Technology

Micron Technology's MT48LC4M32B2TG-7IT:GTR is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade. Ideal for applications requiring fast access time and high memory density in a compact small outline package.

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

R-PDSO-G86

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

32

1

1

86

4194304 words

4M

SYNCHRONOUS

85 Cel

-40 Cel

4MX32

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.5 mm

DUAL

10.16 mm

MT48LC4M32LFF5-8IT:GTR by Micron Technology

MT48LC4M32LFF5-8IT:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B90;

FOUR BANK PAGE BURST

7 ns

AUTO/SELF REFRESH

R-PBGA-B90

e0

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

1

1

90

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

.8 mm

BOTTOM

8 mm

MT48LC8M16A2P-75IT:GTR by Micron Technology

MT48LC8M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2P-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 85°C max temp. It features self-refresh, operates in industrial grade, and has 8388608 words memory capacity. Ideal for applications requiring fast access time and high memory density.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M16A2TG-75:GTR by Micron Technology

MT48LC8M16A2TG-75:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75:GTR is a 3.3V, 8MX16 Synchronous DRAM with 70°C max temp. Features include self-refresh, 5.4ns access time, and 8388608 words capacity. Ideal for commercial applications requiring fast memory access in compact form factor.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M16A2TG-75IT:GTR by Micron Technology

MT48LC8M16A2TG-75IT:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M16A2TG-7E:GTR by Micron Technology

MT48LC8M16A2TG-7E:GTR

Micron Technology

Micron Technology's MT48LC8M16A2TG-7E:GTR is a 3.3V Synchronous DRAM with 8MX16 organization, offering 8388608 words and 134217728-bit memory density. Operating at a max temperature of 70°C, it features self-refresh mode and four-bank page burst access for commercial applications.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

MT48LC8M8A2TG-75:GTR by Micron Technology

MT48LC8M8A2TG-75:GTR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; No. of Words: 8388608 words;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e0

22.22 mm

67108864 bit

SYNCHRONOUS DRAM

8

1

1

54

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

Not Qualified

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.8 mm

DUAL

10.16 mm

IS42S32800J-7BL by Integrated Silicon Solution

IS42S32800J-7BL

Integrated Silicon Solution

IS42S32800J-7BL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 143 MHz clock frequency. Featuring a 268MB memory density, it operates at 3.3V and offers a max access time of 5.4 ns. Ideal for applications requiring high-speed data processing in commercial temperature environments.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

268435456 bit

SYNCHRONOUS DRAM

32

3

1

1

90

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

TFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

10

8 mm

IS42S32800J-7TL by Integrated Silicon Solution

IS42S32800J-7TL

Integrated Silicon Solution

IS42S32800J-7TL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4ns and a memory density of 268MB.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

143 MHz

COMMON

1,2,4,8

R-PDSO-G86

e3

22.22 mm

268435456 bit

SYNCHRONOUS DRAM

32

3

1

1

86

8388608 words

8M

SYNCHRONOUS

70 Cel

0 Cel

8MX32

3-STATE

PLASTIC/EPOXY

TSOP2

TSSOP86,.46,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

4096

1.2 mm

YES

1,2,4,8,FP

.004 Amp

170 mA

3.6 V

3 V

3.3

YES

CMOS

COMMERCIAL

Tin (Sn)

GULL WING

.5 mm

DUAL

10

10.16 mm

MT16HTF25664AZ-800M1 by Micron Technology

MT16HTF25664AZ-800M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT18HTF25672AZ-80EM1 by Micron Technology

MT18HTF25672AZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.9 V;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT18HTS25672RHZ-80EM1 by Micron Technology

MT18HTS25672RHZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Words Code: 256M;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

200

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT36HTF51272PZ-80EM1 by Micron Technology

MT36HTF51272PZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; No. of Functions: 1;

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

38654705664 bit

DDR DRAM MODULE

72

1

1

240

536870912 words

512M

SYNCHRONOUS

70 Cel

0 Cel

512MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

4 mm

MT41K256M4DA-107:J by Micron Technology

MT41K256M4DA-107:J

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Supply Voltage (Vsup): 1.45 V;

MULTI BANK PAGE BURST

.195 ns

AUTO/SELF REFRESH

933 MHz

COMMON

8

R-PBGA-B78

10.5 mm

1073741824 bit

DDR3L DRAM

4

1

1

78

268435456 words

256M

SYNCHRONOUS

256MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA78,9X13,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.35

Not Qualified

8192

1.2 mm

YES

8

DRAMs

162 mA

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT41K64M16JT-125:G by Micron Technology

MT41K64M16JT-125:G

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY; Organization: 64MX16;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

e1

14 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT41K64M16TW-125:J by Micron Technology

MT41K64M16TW-125:J

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES; Memory Width: 16;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

1073741824 bit

DDR3L DRAM

16

1

1

96

67108864 words

64M

SYNCHRONOUS

64MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

8 mm

MT8HTF12864AZ-800M1 by Micron Technology

MT8HTF12864AZ-800M1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Additional Features: SELF REFRESH; WD-MAX;

SINGLE BANK PAGE BURST

SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

2.7 mm

MT8HTF12864HDZ-800M1 by Micron Technology

MT8HTF12864HDZ-800M1

Micron Technology

Micron Technology's MT8HTF12864HDZ-800M1 is a 128MX64 DDR DRAM MODULE with 8589934592 bit memory density. It operates synchronously at 1.8V, featuring dual bank page burst access mode. Ideal for commercial applications, this rectangular microelectronic assembly has a max temperature of 70°C.

DUAL BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N200

67.6 mm

8589934592 bit

DDR DRAM MODULE

64

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

3.8 mm

MT9HTF12872AZ-80EM1 by Micron Technology

MT9HTF12872AZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Shape: RECTANGULAR; Memory Width: 72; Technology: CMOS;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

DUAL

2.7 mm

MT9HTF12872PZ-80EM1 by Micron Technology

MT9HTF12872PZ-80EM1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Self Refresh: YES;

SINGLE BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XDMA-N240

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

240

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

30.5 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

30

2.7 mm

MT9HTF12872RHZ-80EM1 by Micron Technology

MT9HTF12872RHZ-80EM1

Micron Technology

Micron Technology's MT9HTF12872RHZ-80EM1 is a 128MX72 DDR DRAM MODULE with 9663676416 bit memory density. Operating at 1.8V, it features SYNCHRONOUS mode and SELF REFRESH capability. Ideal for commercial applications, this MICROELECTRONIC ASSEMBLY has a temperature range of 0-70 °C.

SINGLE BANK PAGE BURST

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH; WD-MAX

R-XZMA-N200

67.6 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

200

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

30.15 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

ZIG-ZAG

3.8 mm

MT41K256M16HA-125AAT:E by Micron Technology

MT41K256M16HA-125AAT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Memory Density: 4294967296 bit; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K256M16HA-125AIT:E by Micron Technology

MT41K256M16HA-125AIT:E

Micron Technology

Micron Technology's MT41K256M16HA-125AIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-performance applications in automotive electronics.

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B96

14 mm

4294967296 bit

DDR3L DRAM

16

1

1

96

268435456 words

256M

SYNCHRONOUS

256MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125AAT:E by Micron Technology

MT41K512M8RH-125AAT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm; Memory Density: 4294967296 bit;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT41K512M8RH-125AIT:E by Micron Technology

MT41K512M8RH-125AIT:E

Micron Technology

DDR3L DRAM; No. of Terminals: 78; Package Code: TFBGA; Package Shape: RECTANGULAR; Terminal Position: BOTTOM; Operating Mode: SYNCHRONOUS;

MULTI BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B78

10.5 mm

4294967296 bit

DDR3L DRAM

8

1

1

78

536870912 words

512M

SYNCHRONOUS

512MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

AEC-Q100

1.2 mm

YES

1.45 V

1.283 V

1.35

YES

CMOS

BALL

.8 mm

BOTTOM

9 mm

MT46H128M16LFDD-48WT:C by Micron Technology

MT46H128M16LFDD-48WT:C

Micron Technology

LPDDR1 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

4.8 ns

AUTO/SELF REFRESH

208 MHz

COMMON

2,4,8,16

R-PBGA-B60

9 mm

2147483648 bit

LPDDR1 DRAM

16

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-25 Cel

128MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

90 mA

1.95 V

1.7 V

1.8

YES

CMOS

OTHER

BALL

.8 mm

BOTTOM

30

8 mm

MT46H64M32LFCX-5IT:B by Micron Technology

MT46H64M32LFCX-5IT:B

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; JESD-609 Code: e1;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

2147483648 bit

DDR1 DRAM

32

1

1

90

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

9 mm

MT48LC16M8A2BB-6AAAT:L by Micron Technology

MT48LC16M8A2BB-6AAAT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2BB-6AAIT:L by Micron Technology

MT48LC16M8A2BB-6AAIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Length: 16 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

16 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48LC16M8A2P-6AAIT:L by Micron Technology

MT48LC16M8A2P-6AAIT:L

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 54; Package Code: TSOP2; Package Shape: RECTANGULAR; Length: 22.22 mm;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

8

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX8

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT48LC8M16A2P-6AAIT:L by Micron Technology

MT48LC8M16A2P-6AAIT:L

Micron Technology

Micron Technology's MT48LC8M16A2P-6AAIT:L is a 8MX16 Synchronous DRAM with 8388608 words, 134217728 bit memory density, and operates at 3.3V. It features self-refresh mode, industrial temperature grade, and is suitable for applications requiring fast access time and high memory capacity.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PDSO-G54

e3

22.22 mm

134217728 bit

SYNCHRONOUS DRAM

16

1

1

54

8388608 words

8M

SYNCHRONOUS

85 Cel

-40 Cel

8MX16

PLASTIC/EPOXY

TSOP2

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

260

AEC-Q100

1.2 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

Matte Tin (Sn)

GULL WING

.8 mm

DUAL

30

10.16 mm

MT18HVF25672PDZ-667H1 by Micron Technology

MT18HVF25672PDZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 19327352832 bit;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

4 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

17.9 mm

MT46H16M32LFB5-6AT:C by Micron Technology

MT46H16M32LFB5-6AT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Package Style (Meter): GRID ARRAY, VERY THIN PROFILE, FINE PITCH;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

105 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFB5-6IT:C by Micron Technology

MT46H16M32LFB5-6IT:C

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

105 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6AT:C by Micron Technology

MT46H32M16LFBF-6AT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6AT:C is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. Operating at 105 °C max temp, it suits industrial applications requiring fast access times of 5 ns. With synchronous operation and self-refresh capability, this DRAM offers reliable performance in various electronic systems.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

105 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M16LFBF-6IT:C by Micron Technology

MT46H32M16LFBF-6IT:C

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:C is a 32MX16 DDR1 DRAM with 536870912 bit memory density. It operates at 166 MHz clock frequency, suitable for industrial applications requiring fast access time of 5 ns. The package style is grid array with very thin profile and fine pitch, making it ideal for space-constrained designs.

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

110 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

30

8 mm

MT48H16M32LFB5-75IT:C by Micron Technology

MT48H16M32LFB5-75IT:C

Micron Technology

DDR DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

133 MHz

COMMON

1,2,4,8

R-PBGA-B90

e1

13 mm

536870912 bit

DDR DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

1,2,4,8

.00001 Amp

DRAMs

95 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm