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RECTANGULAR DRAM 1,707

DRAM
Part# Info Specs
Part RoHS Manufacturer Description Access Mode Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Input/Output Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Mixed Memory Type Moisture Sensitivity Level (MSL) Nominal Negative Supply Voltage No. of Functions No. of Ports No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Qualification Refresh Cycles Reverse Pinout Screening Level Maximum Seated Height Self Refresh Sequential Burst Length Maximum Standby Current Minimum Standby Voltage Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Width
MT47H128M8HQ-3IT:G by Micron Technology

MT47H128M8HQ-3IT:G

Micron Technology

DDR2 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

-40 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

280 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H128M8HQ-3L:G by Micron Technology

MT47H128M8HQ-3L:G

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

1073741824 bit

DDR2 DRAM

8

1

1

60

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

280 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16HR-25EIT:G by Micron Technology

MT47H64M16HR-25EIT:G

Micron Technology

Micron Technology's MT47H64M16HR-25EIT:G is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features a 1.8V supply voltage and supports multi-bank page burst access mode. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

440 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16HR-25EL:G by Micron Technology

MT47H64M16HR-25EL:G

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

440 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT47H64M16HR-3IT:G by Micron Technology

MT47H64M16HR-3IT:G

Micron Technology

Micron Technology's MT47H64M16HR-3IT:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a thin profile grid array package and operates in industrial temperature range. Suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

350 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

8 mm

MT47H64M16HR-3L:G by Micron Technology

MT47H64M16HR-3L:G

Micron Technology

Micron Technology's MT47H64M16HR-3L:G is a DDR2 DRAM with 64MX16 organization, operating at 333 MHz. It features a 1.8V supply voltage and offers multi-bank page burst access mode. This memory module is suitable for applications requiring high-speed synchronous operation in electronic devices.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

1073741824 bit

DDR2 DRAM

16

1

1

84

67108864 words

64M

SYNCHRONOUS

85 Cel

0 Cel

64MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.007 Amp

DRAMs

350 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H32M32LFCM-5IT:A by Micron Technology

MT46H32M32LFCM-5IT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

LPDDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

150 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H32M32LFCM-6LIT:A by Micron Technology

MT46H32M32LFCM-6LIT:A

Micron Technology

LPDDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5.5 ns

AUTO/SELF REFRESH

166 MHz

COMMON

2,4,8,16

R-PBGA-B90

e1

13 mm

1073741824 bit

LPDDR1 DRAM

32

1

1

90

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX32

3-STATE

PLASTIC/EPOXY

VFBGA

BGA90,9X15,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

140 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H64M16LFCK-5IT:A by Micron Technology

MT46H64M16LFCK-5IT:A

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

11.5 mm

1073741824 bit

DDR1 DRAM

16

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

260

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

10 mm

MT46H64M16LFCK-5LIT:A by Micron Technology

MT46H64M16LFCK-5LIT:A

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

200 MHz

COMMON

2,4,8,16

R-PBGA-B60

e1

11.5 mm

1073741824 bit

DDR1 DRAM

16

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX16

3-STATE

PLASTIC/EPOXY

VFBGA

BGA60,9X10,32

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1 mm

YES

2,4,8,16

.00001 Amp

DRAMs

130 mA

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT18HTF25672AZ-667H1 by Micron Technology

MT18HTF25672AZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

DUAL BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.126 Amp

Other Memory ICs

1728 mA

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

30 mm

MT18HTF25672PZ-667H1 by Micron Technology

MT18HTF25672PZ-667H1

Micron Technology

DDR DRAM MODULE; Temperature Grade: OTHER; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

SINGLE BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

R-XDMA-N240

e4

133.35 mm

19327352832 bit

DDR DRAM MODULE

72

1

1

240

268435456 words

256M

ASYNCHRONOUS

85 Cel

0 Cel

256MX72

3-STATE

UNSPECIFIED

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

30.5 mm

YES

.126 Amp

DRAMs

3330 mA

1.9 V

1.7 V

1.8

NO

CMOS

OTHER

GOLD

NO LEAD

1 mm

DUAL

30.175 mm

MT47H128M16RT-187E:C by Micron Technology

MT47H128M16RT-187E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 84; Package Code: TFBGA; Package Shape: RECTANGULAR; Self Refresh: YES;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

2147483648 bit

DDR2 DRAM

16

1

1

84

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

260

Not Qualified

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

Tin/Silver/Copper (Sn/Ag/Cu)

BALL

.8 mm

BOTTOM

30

9 mm

MT47H128M16RT-25EAAT:C by Micron Technology

MT47H128M16RT-25EAAT:C

Micron Technology

Micron Technology's MT47H128M16RT-25EAAT:C is a DDR2 DRAM with 128MX16 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B84

e1

12.5 mm

2147483648 bit

DDR2 DRAM

16

1

1

84

134217728 words

128M

SYNCHRONOUS

105 Cel

-40 Cel

128MX16

3-STATE

PLASTIC/EPOXY

TFBGA

BGA84,9X15,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

AEC-Q100

1.2 mm

YES

4,8

.012 Amp

DRAMs

330 mA

1.9 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47H128M16RT-3:C by Micron Technology

MT47H128M16RT-3:C

Micron Technology

Micron Technology's MT47H128M16RT-3:C is a DDR2 DRAM with 128MX16 organization, operating at 1.8V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like computers and networking equipment.

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

R-PBGA-B84

e1

12.5 mm

2147483648 bit

DDR2 DRAM

16

1

1

84

134217728 words

128M

SYNCHRONOUS

85 Cel

0 Cel

128MX16

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Not Qualified

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47H256M8EB-187E:C by Micron Technology

MT47H256M8EB-187E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

8

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47H256M8EB-3:C by Micron Technology

MT47H256M8EB-3:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

8

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX8

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.012 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47H512M4EB-187E:C by Micron Technology

MT47H512M4EB-187E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.35 ns

AUTO/SELF REFRESH

533 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

4

1

1

60

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

DRAMs

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47H512M4EB-25E:C by Micron Technology

MT47H512M4EB-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

400 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

4

1

1

60

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.012 Amp

DRAMs

250 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47H512M4EB-3:C by Micron Technology

MT47H512M4EB-3:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

MULTI BANK PAGE BURST

.45 ns

AUTO/SELF REFRESH

333 MHz

COMMON

4,8

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

4

1

1

60

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

3-STATE

PLASTIC/EPOXY

TFBGA

BGA60,9X11,32

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

1.8

Not Qualified

8192

1.2 mm

YES

4,8

.012 Amp

DRAMs

225 mA

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47R256M8EB-25E:C by Micron Technology

MT47R256M8EB-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; No. of Ports: 1;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

8

1

1

60

268435456 words

256M

SYNCHRONOUS

85 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Not Qualified

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT47R512M4EB-25E:C by Micron Technology

MT47R512M4EB-25E:C

Micron Technology

DDR2 DRAM; Temperature Grade: OTHER; No. of Terminals: 60; Package Code: TFBGA; Package Shape: RECTANGULAR; Package Body Material: PLASTIC/EPOXY;

MULTI BANK PAGE BURST

.4 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

11.5 mm

2147483648 bit

DDR2 DRAM

4

1

1

60

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX4

PLASTIC/EPOXY

TFBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE, FINE PITCH

Not Qualified

1.2 mm

YES

1.9 V

1.7 V

1.8

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

9 mm

MT16LSDF6464HY-133D2 by Micron Technology

MT16LSDF6464HY-133D2

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Package Style (Meter): MICROELECTRONIC ASSEMBLY;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XZMA-N144

e4

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

65 Cel

0 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

3.6 V

3 V

3.3

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

ZIG-ZAG

31.75 mm

MT8LSDT6464HIY-133C1 by Micron Technology

MT8LSDT6464HIY-133C1

Micron Technology

SYNCHRONOUS DRAM MODULE; Temperature Grade: INDUSTRIAL; No. of Terminals: 144; Package Code: DIMM; Package Shape: RECTANGULAR; Surface Mount: NO;

DUAL BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-XZMA-N144

e4

67.585 mm

4294967296 bit

SYNCHRONOUS DRAM MODULE

64

1

1

144

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

3.8 mm

YES

3.6 V

3 V

3.3

NO

CMOS

INDUSTRIAL

GOLD

NO LEAD

ZIG-ZAG

31.75 mm

MT18VDVF12872Y-40BD4 by Micron Technology

MT18VDVF12872Y-40BD4

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 184; Package Code: DIMM; Package Shape: RECTANGULAR; Memory Density: 9663676416 bit;

SINGLE BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N184

e4

133.35 mm

9663676416 bit

DDR DRAM MODULE

72

1

1

184

134217728 words

128M

SYNCHRONOUS

70 Cel

0 Cel

128MX72

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

4 mm

YES

2.7 V

2.5 V

2.6

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

18.29 mm

MT16JTF25664AY-1G4D1 by Micron Technology

MT16JTF25664AY-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N240

17179869184 bit

DDR DRAM MODULE

64

240

268435456 words

256M

70 Cel

0 Cel

256MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

.16 Amp

DRAMs

4640 mA

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT8JSF12864HY-1G4D1 by Micron Technology

MT8JSF12864HY-1G4D1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 204; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

667 MHz

COMMON

R-PDMA-N204

8589934592 bit

DDR DRAM MODULE

64

204

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM204,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.5,3.3

Not Qualified

8192

.08 Amp

DRAMs

3920 mA

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT16JSF25664HY-1G4D1 by Micron Technology

MT16JSF25664HY-1G4D1

Micron Technology

Micron Technology's MT16JSF25664HY-1G4D1 is a 256MX64 DDR DRAM MODULE with 17179869184-bit memory density. Operating at 1.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package offers dual bank page burst access mode and CMOS technology.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XZMA-N204

e4

17179869184 bit

DDR DRAM MODULE

64

1

1

204

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

260

Not Qualified

YES

1.575 V

1.425 V

1.5

NO

CMOS

COMMERCIAL

Gold (Au)

NO LEAD

ZIG-ZAG

30

MT4HTF6464AY-667E1 by Micron Technology

MT4HTF6464AY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N240

4294967296 bit

DDR DRAM MODULE

64

240

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT16HTF25664AY-667E1 by Micron Technology

MT16HTF25664AY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Package Shape: RECTANGULAR; Terminal Position: DUAL;

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-XDMA-N240

e4

133.35 mm

17179869184 bit

DDR DRAM MODULE

64

1

1

240

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX64

UNSPECIFIED

DIMM

RECTANGULAR

MICROELECTRONIC ASSEMBLY

Not Qualified

4 mm

YES

1.9 V

1.7 V

1.8

NO

CMOS

COMMERCIAL

GOLD

NO LEAD

DUAL

30.175 mm

MT8HTF12864HDY-667E1 by Micron Technology

MT8HTF12864HDY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

8589934592 bit

DDR DRAM MODULE

64

200

134217728 words

128M

70 Cel

0 Cel

128MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.056 Amp

DRAMs

2160 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT4HTF6464HY-667E1 by Micron Technology

MT4HTF6464HY-667E1

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 200; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.45 ns

333 MHz

COMMON

R-PDMA-N200

4294967296 bit

DDR DRAM MODULE

64

200

67108864 words

64M

70 Cel

0 Cel

64MX64

3-STATE

PLASTIC/EPOXY

DIMM

DIMM200,24

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.028 Amp

DRAMs

1400 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

.6 mm

DUAL

MT18HTF6472Y-40EB2 by Micron Technology

MT18HTF6472Y-40EB2

Micron Technology

DDR DRAM MODULE; Temperature Grade: COMMERCIAL; No. of Terminals: 240; Package Code: DIMM; Refresh Cycles: 8192; Package Shape: RECTANGULAR;

.6 ns

200 MHz

COMMON

R-PDMA-N240

4831838208 bit

DDR DRAM MODULE

72

240

67108864 words

64M

70 Cel

0 Cel

64MX72

3-STATE

PLASTIC/EPOXY

DIMM

DIMM240,40

RECTANGULAR

MICROELECTRONIC ASSEMBLY

1.8

Not Qualified

8192

.09 Amp

DRAMs

4140 mA

1.8

NO

CMOS

COMMERCIAL

NO LEAD

1 mm

DUAL

MT41J512M8THU-15E:A by Micron Technology

MT41J512M8THU-15E:A

Micron Technology

Micron Technology's MT41J512M8THU-15E:A is a DDR3 DRAM with 512MX8 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and dual bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in a compact form factor.

DUAL BANK PAGE BURST

AUTO/SELF REFRESH

R-PBGA-B82

e1

15 mm

4294967296 bit

DDR3 DRAM

8

1

1

82

536870912 words

512M

SYNCHRONOUS

85 Cel

0 Cel

512MX8

PLASTIC/EPOXY

LFBGA

RECTANGULAR

GRID ARRAY, LOW PROFILE, FINE PITCH

Not Qualified

1.35 mm

YES

1.575 V

1.425 V

1.5

YES

CMOS

OTHER

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

12.5 mm

MT46H16M16LFBF-6IT:ATR by Micron Technology

MT46H16M16LFBF-6IT:ATR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

5 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

268435456 bit

DDR1 DRAM

16

1

1

60

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46H16M32LFCM-6IT:BTR by Micron Technology

MT46H16M32LFCM-6IT:BTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; No. of Words: 16777216 words;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

DDR1 DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT46H32M16LFBF-6IT:BTR by Micron Technology

MT46H32M16LFBF-6IT:BTR

Micron Technology

Micron Technology's MT46H32M16LFBF-6IT:BTR is a DDR1 DRAM with 32MX16 organization, 33554432 words, and 536870912 bit memory density. It operates synchronously at a max temperature of 85°C and is ideal for industrial applications requiring fast access times and low power consumption.

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B60

e1

9 mm

536870912 bit

DDR1 DRAM

16

1

1

60

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm

MT46V16M16P-5BIT:KTR by Micron Technology

MT46V16M16P-5BIT:KTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Maximum Seated Height: 1.2 mm;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

16

1

1

66

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Not Qualified

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-5B:FTR by Micron Technology

MT46V32M16P-5B:FTR

Micron Technology

MT46V32M16P-5B:FTR by Micron Technology is a DDR1 DRAM with 32MX16 organization and 33554432 words. It operates synchronously, has self-refresh capability, and a max access time of 0.7 ns. It is commonly used in applications requiring high-speed memory such as computers and servers.

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16P-5BIT:FTR by Micron Technology

MT46V32M16P-5BIT:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Width: 10.16 mm;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

85 Cel

-40 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Not Qualified

1.2 mm

YES

2.7 V

2.5 V

2.6

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M16P-6T:FTR by Micron Technology

MT46V32M16P-6T:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Length: 22.22 mm;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

16

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V32M16TG-6T:FTR by Micron Technology

MT46V32M16TG-6T:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; No. of Functions: 1;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e0

22.22 mm

536870912 bit

DDR1 DRAM

16

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX16

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

TIN LEAD

GULL WING

.65 mm

DUAL

10.16 mm

MT46V32M8P-6T:GTR by Micron Technology

MT46V32M8P-6T:GTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Minimum Operating Temperature: 0 Cel;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

268435456 bit

DDR1 DRAM

8

3

1

1

66

33554432 words

32M

SYNCHRONOUS

70 Cel

0 Cel

32MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8FN-6IT:FTR by Micron Technology

MT46V64M8FN-6IT:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 60; Package Code: TBGA; Package Shape: RECTANGULAR; Maximum Operating Temperature: 85 Cel;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PBGA-B60

e0

12.5 mm

536870912 bit

DDR1 DRAM

8

1

1

60

67108864 words

64M

SYNCHRONOUS

85 Cel

-40 Cel

64MX8

PLASTIC/EPOXY

TBGA

RECTANGULAR

GRID ARRAY, THIN PROFILE

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

INDUSTRIAL

TIN LEAD SILVER

BALL

1 mm

BOTTOM

10 mm

MT46V64M8P-6T:DTR by Micron Technology

MT46V64M8P-6T:DTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Qualification: Not Qualified;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT46V64M8P-6T:FTR by Micron Technology

MT46V64M8P-6T:FTR

Micron Technology

DDR1 DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 66; Package Code: TSSOP; Package Shape: RECTANGULAR; Technology: CMOS;

FOUR BANK PAGE BURST

.7 ns

AUTO/SELF REFRESH

R-PDSO-G66

e3

22.22 mm

536870912 bit

DDR1 DRAM

8

3

1

1

66

67108864 words

64M

SYNCHRONOUS

70 Cel

0 Cel

64MX8

PLASTIC/EPOXY

TSSOP

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

260

Not Qualified

1.2 mm

YES

2.7 V

2.3 V

2.5

YES

CMOS

COMMERCIAL

Matte Tin (Sn)

GULL WING

.65 mm

DUAL

30

10.16 mm

MT48H16M32LFCM-75IT:ATR by Micron Technology

MT48H16M32LFCM-75IT:ATR

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 90; Package Code: VFBGA; Package Shape: RECTANGULAR; Memory Density: 536870912 bit;

FOUR BANK PAGE BURST

6 ns

AUTO/SELF REFRESH

R-PBGA-B90

e1

13 mm

536870912 bit

SYNCHRONOUS DRAM

32

1

1

90

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX32

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

1.95 V

1.7 V

1.8

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

10 mm

MT48LC16M16A2BG-75IT:DTR by Micron Technology

MT48LC16M16A2BG-75IT:DTR

Micron Technology

Micron Technology's MT48LC16M16A2BG-75IT:DTR is a 16MX16 Synchronous DRAM with 268Mbit memory density. It operates at 3.3V, has a max access time of 5.4ns, and supports four bank page burst access mode. Ideal for industrial applications requiring high-speed memory with low power consumption.

FOUR BANK PAGE BURST

5.4 ns

AUTO/SELF REFRESH

R-PBGA-B54

e1

14 mm

268435456 bit

SYNCHRONOUS DRAM

16

1

1

54

16777216 words

16M

SYNCHRONOUS

85 Cel

-40 Cel

16MX16

PLASTIC/EPOXY

VFBGA

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

Not Qualified

1 mm

YES

3.6 V

3 V

3.3

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.8 mm

BOTTOM

8 mm