Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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MT41K256M16HA-125MAIT:E
Micron Technology
Micron Technology's MT41K256M16HA-125MAIT:E is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access for high-speed memory applications in various electronic devices.
MULTI BANK PAGE BURST
AUTO/SELF REFRESH
R-PBGA-B96
14 mm
4294967296 bit
DDR3L DRAM
16
1
96
268435456 words
256M
SYNCHRONOUS
256MX16
PLASTIC/EPOXY
TFBGA
RECTANGULAR
GRID ARRAY, THIN PROFILE, FINE PITCH
1.2 mm
YES
1.45 V
1.283 V
1.35
CMOS
BALL
.8 mm
BOTTOM
9 mm
MT41J64M16JT-15EXIT:G
Micron Technology's MT41J64M16JT-15EXIT:G is a DDR3 DRAM with 64MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.
e1
1073741824 bit
DDR3 DRAM
67108864 words
64M
85 Cel
-40 Cel
64MX16
1.575 V
1.425 V
1.5
INDUSTRIAL
TIN SILVER COPPER
8 mm
MT41J64M16TW-093:J
MT41J64M16TW-093:J by Micron Technology is a DDR3 DRAM with 64MX16 organization, 1.5V nominal voltage, and operating temperature range of 0 to 85°C. It is commonly used in applications requiring synchronous operation and multi-bank page burst access mode.
0 Cel
OTHER
MT40A1G16KNR-062E:E
Micron Technology's MT40A1G16KNR-062E:E is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Suitable for applications requiring high-speed data processing in devices with limited space and power constraints.
SINGLE BANK PAGE BURST
AUTO REFRESH
13.5 mm
17179869184 bit
DDR4 DRAM
1073741824 words
1G
95 Cel
1GX16
260
1.26 V
1.14 V
1.2
30
7.5 mm
MT40A1G16KNR-075:E
MT40A1G16KNR-075:E by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at 1.2V. It features synchronous operation, single bank page burst access mode, and a memory width of 16 bits. Ideal for applications requiring high-speed and efficient memory performance in electronic devices.
NOT SPECIFIED
MT40A512M16JY-062EIT:B
DDR4 DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 65536; Package Shape: RECTANGULAR;
COMMON
8
8589934592 bit
536870912 words
512M
512MX16
BGA96,9X16,32
65536
NO
MT41K256M16TW-107AT:P
Micron Technology's MT41K256M16TW-107AT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile grid array packages.
105 Cel
Tin/Silver/Copper (Sn/Ag/Cu)
MT41K512M16VRN-107AAT:P
Micron Technology's MT41K512M16VRN-107AAT:P is a DDR3L DRAM with 512MX16 organization, operating at up to 934.57 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
934.57 MHz
8192
AEC-Q100
.022 Amp
304 mA
IS43QR16512A-083TBLI
Integrated Silicon Solution
IS43QR16512A-083TBLI by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1200 MHz
4,8
DDR DRAM
3-STATE
.025 Amp
353 mA
10 mm
IS43QR16512A-083TBL
IS43QR16512A-083TBL by Integrated Silicon Solution is a 512MX16 DDR DRAM with 1200 MHz clock frequency, 1.2V supply voltage, and 95°C operating temperature. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in compact electronic devices.
W632GG6NB-12
Winbond Electronics
The Winbond Electronics W632GG6NB-12 is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for synchronous multi-bank page burst applications. With a memory density of 2147483648 bits and 16-bit memory width, it offers high performance in compact dimensions.
13 mm
2147483648 bit
134217728 words
128M
128MX16
VFBGA
GRID ARRAY, VERY THIN PROFILE, FINE PITCH
1 mm
W632GG6NB12I
The Winbond Electronics W632GG6NB12I is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.
W632GG6NB12J
Winbond Electronics' W632GG6NB12J is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features a grid array package style, suitable for industrial applications requiring high memory density and multi-bank page burst access mode. With a temperature range of -40 to 105°C, it offers synchronous operation in a compact form factor.
W632GU6NB11I
Winbond Electronics' W632GU6NB11I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style, suitable for industrial applications due to its wide temperature range of -40 to 95°C and multi-bank page burst access mode.
W632GU6NB12I
The Winbond Electronics W632GU6NB12I is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features a grid array package style with very thin profile and fine pitch, suitable for industrial applications requiring high memory density and multi-bank page burst access mode.
IS43QR16256B-083RBL
IS43QR16256B-083RBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1200.48 MHz clock frequency, 95°C operating temp, and 1.2mm seated height. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.
DUAL BANK PAGE BURST
1200.48 MHz
.058 Amp
375 mA
MT40A256M16LY-062EAAT:F
Micron Technology's MT40A256M16LY-062EAAT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and reliability in harsh environments.
OPEN-DRAIN
.048 Amp
58 mA
MT40A256M16LY-062EAIT:F
Micron Technology's MT40A256M16LY-062EAIT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access with a temperature range of -40 to 95°C.
.046 Amp
56 mA
MT40A256M16LY-062EAUT:F
Micron Technology's MT40A256M16LY-062EAUT:F is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, common I/O type, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
125 Cel
.05 Amp
60 mA
AUTOMOTIVE
AS4C256M16D4-75BCN
Alliance Memory
Alliance Memory's AS4C256M16D4-75BCN is a 256MX16 DDR4 DRAM with 1333 MHz clock frequency, 95°C max temp, and 1.2V nominal supply. Ideal for applications requiring high-speed synchronous operation in compact electronic devices.
1333 MHz
.044 Amp
235 mA
IS43TR16512S2DL-125KBLI
IS43TR16512S2DL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
800 MHz
LFBGA
GRID ARRAY, LOW PROFILE, FINE PITCH
1.4 mm
246 mA
IS43TR16256B-125KBLI-TR
IS43TR16256B-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 800 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for industrial applications requiring high memory density and fast data access speeds.
3
.029 Amp
276 mA
10
IS43TR16256A-125KBLI-TR
IS43TR16256A-125KBLI-TR by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.5V supply voltage, operating at -40 to 95 °C. It features synchronous operation, common I/O type, and 4/8 sequential burst length. Ideal for industrial applications requiring high memory density and multi-bank page burst access mode.
4, 8
BGA96,6X16,32
.057 Amp
IS43QR16256B-075UBLI
IS43QR16256B-075UBLI by Integrated Silicon Solution is a DDR4 DRAM with 256MX16 organization, operating at up to 1333.33 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
1333.33 MHz
.062 Amp
385 mA
IS43QR16256B-075UBL
IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.
IS43QR16512A-075VBLI
IS43QR16512A-075VBLI by Integrated Silicon Solution is a DDR4 DRAM with 512MX16 organization, operating at 1333 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
IS43QR16512A-075VBL
IS43QR16512A-075VBL by Integrated Silicon Solution is a 512MX16 DDR4 DRAM with 1333 MHz clock frequency. It operates synchronously, supports self-refresh, and has a common I/O type. Ideal for applications requiring high memory density and fast data processing in compact devices.
MT41K512M16VRN-107AAT:PTR
DDR3L DRAM; Temperature Grade: INDUSTRIAL; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT41K512M16VRN-107AIT:PTR
Micron Technology's MT41K512M16VRN-107AIT:PTR is a DDR3L DRAM with 512MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and low power consumption.
IS43TR16256BL-107MBLI-TR
IS43TR16256BL-107MBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
934.5 MHz
.028 Amp
254 mA
IS43TR16256BL-125KBLI-TR
IS43TR16256BL-125KBLI-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing in a compact grid array package.
228 mA
IS43TR16256BL-125KBL-TR
IS43TR16256BL-125KBL-TR by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It has a package style of GRID ARRAY, THIN PROFILE, FINE PITCH and is suitable for applications requiring high memory density and low power consumption.
IS46TR16256BL-125KBLA2-TR
IS46TR16256BL-125KBLA2-TR by Integrated Silicon Solution is a DDR3L DRAM with 256MX16 organization, operating at up to 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in a compact form factor.
MT40A1G16KNR-075:ETR
MT40A1G16KNR-075:ETR by Micron Technology is a DDR4 DRAM with 1GX16 organization, operating at a max clock frequency of 1333 MHz. It has a thin profile package style and is suitable for applications requiring high-speed synchronous memory.
.036 Amp
360 mA
MT40A256M16GE-075EAIT:BTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; Maximum Clock Frequency (fCLK): 1333.33 MHz; Operating Mode: SYNCHRONOUS;
MT40A256M16GE-083EAIT:BTR
Micron Technology's MT40A256M16GE-083EAIT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
1200.4 MHz
MT40A256M16GE-083EAUT:BTR
Micron Technology's MT40A256M16GE-083EAUT:BTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1200.4 MHz clock frequency. It features common I/O type, self-refresh mode, and operates in synchronous mode. Ideal for applications requiring high-speed memory access and low power consumption in automotive electronics.
MT40A256M16LY-062EAAT:FTR
Micron Technology's MT40A256M16LY-062EAAT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
1600 MHz
MT40A256M16LY-062EAIT:FTR
Micron Technology's MT40A256M16LY-062EAIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at 1600 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory performance in automotive electronics due to AEC-Q100 screening level.
MT40A256M16LY-062EAUT:FTR
Micron Technology's MT40A256M16LY-062EAUT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics due to AEC-Q100 screening level.
MT40A512M16JY-075E:BTR
Micron Technology's MT40A512M16JY-075E:BTR is a DDR4 DRAM with 512MX16 organization, operating at 1333.33 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
105 mA
MT40A512M16JY-083EAAT:BTR
MT40A512M16JY-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
255 mA
MT40A512M16JY-083EAIT:BTR
Micron Technology's MT40A512M16JY-083EAIT:BTR is a DDR4 DRAM with 512MX16 organization, operating at up to 1200.4 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT40A512M16JY-083EAUT:BTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Maximum Operating Temperature: 125 Cel;
MT40A512M16LY-062EAUT:ETR
MT40A512M16LY-062EAUT:ETR by Micron Technology is a DDR4 DRAM with 512MX16 organization, operating at a max clock frequency of 1600 MHz. It is commonly used in applications requiring high-speed and synchronous memory access, such as servers, workstations, and high-performance computing systems.
279 mA
AS4C128M16D3LC-12BINTR
Alliance Memory's AS4C128M16D3LC-12BINTR is a 128MX16 DDR3L DRAM with 800 MHz clock frequency. It operates at 1.35V, has 96 terminals in a grid array package style, and supports multi-bank page burst access mode. Ideal for industrial applications requiring high memory density and fast data processing.
AUTO REFRESH, SELF REFRESH
.015 Amp
240 mA
MT40A256M16LY-062EIT:FTR
Micron Technology's MT40A256M16LY-062EIT:FTR is a DDR4 DRAM with 256MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
270 mA
MT40A256M16LY-075:FTR
DDR4 DRAM; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR; Operating Mode: SYNCHRONOUS;
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