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SI4056ADY-T1-GE3

Vishay Intertechnology

SI4056ADY-T1-GE3 by Vishay Intertechnology

SI4056ADY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage, 8.3A max drain current, and 0.0292 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a temp range of -55 to 150°C.

Median Price

$0.452

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 99,173 parts In-Stock

1+ parts

$1.590

100+ parts

$0.668

1k+ parts

$0.477

10k+ parts

$0.351

99,173

$1.590

$0.668

$0.477

$0.351

Newark

USA . 4,231 parts In-Stock

1+ parts

$1.890

100+ parts

$0.873

1k+ parts

$0.793

10k+ parts

-

4,231

$1.890

$0.873

$0.793

-

DigiKey

USA . 12,856 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.380

12,856

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$0.380

TTI

USA . 7,500 parts In-Stock

1+ parts

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$0.380

7,500

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-

$0.380

Farnell

UK . 6,751 parts In-Stock

1+ parts

-

100+ parts

$0.525

1k+ parts

$0.374

10k+ parts

-

6,751

-

$0.525

$0.374

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Element14

Singapore . 6,046 parts In-Stock

1+ parts

-

100+ parts

$0.725

1k+ parts

$0.516

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6,046

-

$0.725

$0.516

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Future Electronics

Canada . 5,000 parts In-Stock

1+ parts

-

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$0.260

5,000

-

-

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$0.260

TTI Europe

Germany . 5,000 parts In-Stock

1+ parts

-

100+ parts

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$0.305

5,000

-

-

-

$0.305

Verical

USA . 5,000 parts In-Stock

1+ parts

-

100+ parts

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$0.280

5,000

-

-

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$0.280

RS (Exports)

UK . 4,830 parts In-Stock

1+ parts

-

100+ parts

$0.680

1k+ parts

$0.380

10k+ parts

-

4,830

-

$0.680

$0.380

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 100,000 parts In-Stock

1+ parts

$0.415

100+ parts

-

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100,000

$0.415

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Nova Conductors

Japan . 1,000 parts In-Stock

1+ parts

$0.443

100+ parts

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1,000

$0.443

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Chip Stock

USA . 527,500 parts In-Stock

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527,500

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IBS Electronics

USA . 32,500 parts In-Stock

1+ parts

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$0.912

32,500

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$0.912

Vyrian

USA . 21,842 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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$0.500

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$0.500

Component Sense

UK . 19,646 parts In-Stock

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19,646

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 21,678 parts In-Stock

1+ parts

$0.238

100+ parts

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21,678

$0.238

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Semicontronic

India . 21,476 parts In-Stock

1+ parts

$0.238

100+ parts

$0.232

1k+ parts

$0.231

10k+ parts

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21,476

$0.238

$0.232

$0.231

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Corohmni

South Africa . 79 parts In-Stock

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$0.311

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79

$0.311

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Argo Parts USA

USA . 1,891 parts In-Stock

1+ parts

$0.443

100+ parts

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1k+ parts

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10k+ parts

$0.430

1,891

$0.443

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-

$0.430

Bastille Electronics

Australia . 300 parts In-Stock

1+ parts

$0.443

100+ parts

$0.421

1k+ parts

$0.400

10k+ parts

$0.394

300

$0.443

$0.421

$0.400

$0.394

Aztec Data Supply Inc.

USA . 1,248 parts In-Stock

1+ parts

$1.000

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1,248

$1.000

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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Continental Prestige Electronics

USA . 9,884 parts In-Stock

1+ parts

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100+ parts

$0.481

1k+ parts

$0.305

10k+ parts

$0.280

9,884

-

$0.481

$0.305

$0.280

Overview

Enhance your electronic devices with the high-quality SI4056ADY-T1-GE3 Small Signal Field Effect Transistor by Vishay Intertechnology. Designed for switching applications, this N-channel transistor offers a built-in diode for added convenience. With a maximum power dissipation of 5W and a minimum DS breakdown voltage of 100V, this enhancement mode transistor ensures reliable performance in various operating conditions. Upgrade your projects with the cutting-edge technology and superior craftsmanship that Vishay Intertechnology is known for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body helps provide good mechanical protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have lower on-state resistance and higher electron mobility compared to P-channel FETs, making them more efficient for switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor would excel in tasks that require fast and efficient turning on and off of electronic circuits.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this transistor can handle higher voltages without failing, making it suitable for a wide range of applications.

Maximum Power Dissipation (Abs): 5 W

The transistor's maximum power dissipation of 5W indicates its ability to handle moderate power levels without overheating, ensuring reliable performance in various operating conditions.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to operate reliably in industrial and automotive environments where temperatures can be elevated.

Maximum Drain Current (ID): 8.3 A

The high maximum drain current rating of 8.3A indicates the transistor's capability to handle significant current flow, making it suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.0292 ohm

The low drain-source on resistance of 0.0292 ohm results in lower power dissipation and improved efficiency of the transistor in conducting current.

Maximum Feedback Capacitance (Crss): 7.2 pF

The low feedback capacitance of 7.2 pF helps reduce signal distortion and improves the transistor's high-frequency performance, making it ideal for high-speed switching applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4056ADY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

8.3 A

Maximum Drain-Source On Resistance:

.0292 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

7.2 pF

JESD-30 Code:

R-PDSO-G8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

5 W

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4056ADY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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