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SI4062DY-T1-GE3

Vishay Intertechnology

SI4062DY-T1-GE3 by Vishay Intertechnology

SI4062DY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 32.1A max drain current. Ideal for switching applications, it features a single configuration with built-in diode, 0.0042 ohm max drain-source resistance, and operates in enhancement mode.

Median Price

$1.629

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 2,294 parts In-Stock

1+ parts

$0.588

100+ parts

$0.588

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-

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2,294

$0.588

$0.588

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Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

$1.629

100+ parts

$1.034

1k+ parts

$0.748

10k+ parts

-

2,500

$1.629

$1.034

$0.748

-

Farnell

UK . 2,429 parts In-Stock

1+ parts

$2.020

100+ parts

$0.901

1k+ parts

-

10k+ parts

-

2,429

$2.020

$0.901

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-

Mouser Electronics

USA . 14,569 parts In-Stock

1+ parts

$2.270

100+ parts

$0.989

1k+ parts

$0.765

10k+ parts

$0.714

14,569

$2.270

$0.989

$0.765

$0.714

DigiKey

USA . 10,951 parts In-Stock

1+ parts

$2.270

100+ parts

$0.989

1k+ parts

$0.764

10k+ parts

$0.624

10,951

$2.270

$0.989

$0.764

$0.624

Arrow

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

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-

10k+ parts

$0.635

2,500

-

-

-

$0.635

Verical

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

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10k+ parts

$0.635

2,500

-

-

-

$0.635

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.787

100+ parts

-

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300

$0.787

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Flip Electronics

USA . 3,000 parts In-Stock

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3,000

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Vyrian

USA . 2,184 parts In-Stock

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2,184

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 1,774 parts In-Stock

1+ parts

$0.570

100+ parts

$0.556

1k+ parts

$0.553

10k+ parts

-

1,774

$0.570

$0.556

$0.553

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Ampacity Inc.

Singapore . 1,771 parts In-Stock

1+ parts

$0.570

100+ parts

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1,771

$0.570

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Netroflash

USA . 100 parts In-Stock

1+ parts

$0.787

100+ parts

-

1k+ parts

$0.748

10k+ parts

$0.732

100

$0.787

-

$0.748

$0.732

Corohmni

South Africa . 137 parts In-Stock

1+ parts

$1.159

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137

$1.159

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Microchip USA

USA . 3,309 parts In-Stock

1+ parts

$4.773

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3,309

$4.773

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Perfect Parts

USA . 5,600 parts In-Stock

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5,600

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iodParts Technologies Inc.

India . 5,430 parts In-Stock

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5,430

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Overview

Unleash the power of cutting-edge technology with the SI4062DY-T1-GE3 by Vishay Intertechnology. This high-quality Small Signal Field Effect Transistor (FET) offers unparalleled performance and reliability, making it ideal for a wide range of switching applications. With a single configuration featuring a built-in diode, this transistor provides enhanced functionality while maximizing efficiency. Experience seamless operation and superior results with this innovative solution. Elevate your projects to new heights with Vishay Intertechnology's SI4062DY-T1-GE3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the transistor, making it reliable for long-term use.

Polarity or Channel Type: N-CHANNEL

N-Channel transistors typically have better performance characteristics and lower on-resistance compared to P-Channel transistors, making them suitable for many applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode allows for efficient switching operations and can help protect the transistor from voltage spikes.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power dissipation.

Surface Mount: YES

Surface mount compatibility makes it easy to integrate this transistor into various circuit boards, saving space and simplifying assembly processes.

Minimum DS Breakdown Voltage: 60 V

With a high breakdown voltage, this transistor can handle higher voltages without risk of damage, ensuring reliability in different operating conditions.

Maximum Drain Current (ID): 32.1 A

Capable of handling high current loads, this transistor is suitable for applications that require a high current switching capability.

Maximum Drain-Source On Resistance: 0.0042 ohm

Low on-resistance minimizes power loss and heat generation, improving efficiency and performance of the transistor.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4062DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (ID):

32.1 A

Maximum Drain-Source On Resistance:

.0042 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4062DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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