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SI4058DY-T1-GE3

Vishay Intertechnology

SI4058DY-T1-GE3 by Vishay Intertechnology

SI4058DY-T1-GE3 by Vishay Intertechnology is a N-channel small signal FET with a min DS breakdown voltage of 100V. It is used for switching applications and operates in enhancement mode. With a max drain current of 10.3A and a max drain-source on resistance of 0.026 ohm, it offers efficient performance.

Median Price

$0.672

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 3,552 parts In-Stock

1+ parts

$0.759

100+ parts

$0.309

1k+ parts

$0.235

10k+ parts

$0.231

3,552

$0.759

$0.309

$0.235

$0.231

Mouser Electronics

USA . 41,888 parts In-Stock

1+ parts

$1.060

100+ parts

$0.431

1k+ parts

$0.300

10k+ parts

$0.229

41,888

$1.060

$0.431

$0.300

$0.229

DigiKey

USA . 14,727 parts In-Stock

1+ parts

$1.060

100+ parts

$0.431

1k+ parts

$0.300

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-

14,727

$1.060

$0.431

$0.300

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Newark

USA . 2,537 parts In-Stock

1+ parts

$1.200

100+ parts

$0.488

1k+ parts

$0.433

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-

2,537

$1.200

$0.488

$0.433

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Arrow

USA . 5,000 parts In-Stock

1+ parts

-

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$0.273

5,000

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$0.273

TTI

USA . 5,000 parts In-Stock

1+ parts

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$0.221

5,000

-

-

-

$0.221

Element14

Singapore . 3,552 parts In-Stock

1+ parts

-

100+ parts

$0.584

1k+ parts

$0.444

10k+ parts

$0.438

3,552

-

$0.584

$0.444

$0.438

Verical

USA . 2,500 parts In-Stock

1+ parts

-

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$0.312

2,500

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$0.312

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.331

100+ parts

-

1k+ parts

-

10k+ parts

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500

$0.331

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Maritex

Poland . 6,700 parts In-Stock

1+ parts

$0.628

100+ parts

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6,700

$0.628

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Chip Stock

USA . 10,750 parts In-Stock

1+ parts

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10,750

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Vyrian

USA . 10,592 parts In-Stock

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10,592

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NAC Semi

USA . 5,000 parts In-Stock

1+ parts

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$0.299

5,000

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$0.299

IBS Electronics

USA . 2,500 parts In-Stock

1+ parts

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$0.645

2,500

-

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$0.645

Cyclops Electronics Ltd

UK . 370 parts In-Stock

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370

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Distributors (Availability)

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Ampacity Inc.

Singapore . 9,831 parts In-Stock

1+ parts

$0.162

100+ parts

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9,831

$0.162

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Argo Parts USA

USA . 1,519 parts In-Stock

1+ parts

$0.331

100+ parts

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$0.321

1,519

$0.331

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$0.321

Corohmni

South Africa . 64 parts In-Stock

1+ parts

$0.496

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64

$0.496

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Aztec Data Supply Inc.

USA . 3,673 parts In-Stock

1+ parts

$0.685

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3,673

$0.685

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RC Electronics

USA . 10,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 9,427 parts In-Stock

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9,427

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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7,500

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Futuretech Components

Singapore . 6,500 parts In-Stock

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6,500

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Continental Prestige Electronics

USA . 3,840 parts In-Stock

1+ parts

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100+ parts

$0.348

1k+ parts

$0.272

10k+ parts

$0.254

3,840

-

$0.348

$0.272

$0.254

Netroflash

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

$0.324

1k+ parts

$0.314

10k+ parts

$0.307

1,000

-

$0.324

$0.314

$0.307

GreenTree Electronics

Israel . 500 parts In-Stock

1+ parts

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500

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Speed Components Ltd (Excess)

Israel . 1 parts In-Stock

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1

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Overview

Looking for a reliable and high-quality small signal field effect transistor? Look no further than the SI4058DY-T1-GE3 by Vishay Intertechnology. With its advanced technology and top-notch manufacturing process, this N-channel transistor offers outstanding performance and durability. Ideal for switching applications, it boasts a minimum DS breakdown voltage of 100V and a maximum drain current of 10.3A. Its compact package shape and surface mount capability make it easy to integrate into any design. Experience enhanced efficiency and reliability with the SI4058DY-T1-GE3. Upgrade your projects today!

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - This material provides durability and protection for the internal components of the transistor, making it suitable for various operating conditions.

Polarity or Channel Type:

N-CHANNEL - This type of transistor allows for efficient flow of current, resulting in enhanced performance and improved overall functionality in switching applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - The built-in diode simplifies circuit design and offers reverse polarity protection, ensuring reliable and efficient operation in switching applications.

Transistor Application:

SWITCHING - Specifically designed for switching applications, this transistor can handle high currents and provide fast switching speeds, making it ideal for various electronic projects.

Surface Mount:

YES - The surface mount capability allows for easy integration onto PCBs, saving space and facilitating mass production, making this transistor suitable for compact electronic devices.

Minimum DS Breakdown Voltage:

100 V - With a high breakdown voltage, this transistor can withstand higher voltage levels, making it suitable for applications that require higher power handling capabilities.

Package Shape:

RECTANGULAR - The rectangular shape of the package enables efficient placement on PCBs, optimizing space utilization and facilitating automated assembly processes.

Terminal Form:

GULL WING - The gull wing terminal form ensures secure and reliable soldering connections, minimizing the risk of electrical failures and enhancing overall product reliability.

Operating Mode:

ENHANCEMENT MODE - The enhancement mode operation allows for precise control over the switching behavior and facilitates efficient power management, contributing to overall system performance.

No. of Elements:

1 - With a single element, this transistor simplifies circuit design and reduces complexity, making it easier to integrate into electronic systems.

No. of Terminals:

8 - The eight terminals provide multiple connection points, enabling flexibility in circuit designs and facilitating proper signal routing.

Maximum Power Dissipation (Abs):

5.6 W - The high maximum power dissipation rating enables the transistor to handle higher power levels, making it suitable for applications that require robust performance.

Package Style (Meter):

SMALL OUTLINE - The small outline package style offers compactness and space efficiency, making it suitable for miniaturized electronic devices and applications with limited board space.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - The metal-oxide semiconductor technology ensures high reliability, low power consumption, and excellent switching characteristics, making this transistor a reliable choice for various applications.

Maximum Operating Temperature:

150 °C - With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliable operation even in demanding environments.

Transistor Element Material:

SILICON - The use of silicon as the transistor element material provides excellent electrical properties, stability, and compatibility with standard semiconductor manufacturing processes.

Minimum Operating Temperature:

55 °C - With a low minimum operating temperature, this transistor can function reliably in extreme cold environments and endure temperature fluctuations.

Terminal Finish:

MATTE TIN - The matte tin terminal finish enhances solderability and ensures proper electrical connections, preventing oxidation and contributing to long-term performance and reliability.

Maximum Drain Current (ID):

10.3 A - With a high maximum drain current rating, this transistor can handle large current flows, making it suitable for high-power applications and demanding switching tasks.

Maximum Drain-Source On Resistance:

0.026 ohm - The low maximum drain-source on resistance minimizes power losses and improves overall efficiency, ensuring optimal performance in switching applications.

Terminal Position:

DUAL - The dual terminal position provides flexibility in circuit design and enables optimal signal routing, allowing for improved performance and reliability.

Moisture Sensitivity Level (MSL):

1 - Having a moisture sensitivity level of 1 ensures that this transistor can withstand normal handling and storage conditions without being negatively affected by moisture.

Maximum Time At Peak Reflow Temperature (s):

30 - The maximum time at peak reflow temperature indicates the duration the transistor can withstand high-temperature soldering processes, allowing for efficient assembly and reliable solder joints.

Peak Reflow Temperature °C:

260 - With a high peak reflow temperature, this transistor can endure high-temperature soldering processes, ensuring proper solder joint formation and reliable electrical connections.

Maximum Feedback Capacitance (Crss):

11 pF - The low feedback capacitance reduces the potential for unwanted signal coupling and improves overall stability and performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4058DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

10.3 A

Maximum Drain-Source On Resistance:

.026 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

11 pF

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4058DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

Category top products 20

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