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SI4056DY-T1-GE3

Vishay Intertechnology

SI4056DY-T1-GE3 by Vishay Intertechnology

SI4056DY-T1-GE3 by Vishay Intertechnology is a N-channel FET with 100V DS breakdown voltage and 7.3A max drain current. Ideal for switching applications, it features a built-in diode, 0.023 ohm max on resistance, and operates in enhancement mode. The small outline package with gull wing terminals makes it suitable for surface mount assembly.

Median Price

$0.612

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 44,370 parts In-Stock

1+ parts

$0.819

100+ parts

$0.428

1k+ parts

$0.290

10k+ parts

$0.232

44,370

$0.819

$0.428

$0.290

$0.232

Mouser Electronics

USA . 4,584 parts In-Stock

1+ parts

$1.390

100+ parts

$0.669

1k+ parts

$0.425

10k+ parts

$0.334

4,584

$1.390

$0.669

$0.425

$0.334

DigiKey

USA . 26 parts In-Stock

1+ parts

$1.390

100+ parts

$0.575

1k+ parts

$0.407

10k+ parts

-

26

$1.390

$0.575

$0.407

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Newark

USA . 1,180 parts In-Stock

1+ parts

$1.790

100+ parts

$0.847

1k+ parts

$0.699

10k+ parts

-

1,180

$1.790

$0.847

$0.699

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TTI Europe

Germany . 5,000 parts In-Stock

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-

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$0.404

5,000

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$0.404

Future Electronics

Canada . 2,500 parts In-Stock

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-

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$0.310

2,500

-

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$0.310

Chip1Stop

Japan . 2,500 parts In-Stock

1+ parts

-

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$0.328

2,500

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$0.328

Verical

USA . 2,160 parts In-Stock

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$0.310

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2,160

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$0.310

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Distributors (In-Stock)

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Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.595

100+ parts

-

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50

$0.595

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Maritex

Poland . 25,000 parts In-Stock

1+ parts

$0.647

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25,000

$0.647

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Chip Stock

USA . 78,754 parts In-Stock

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78,754

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IBS Electronics

USA . 37,500 parts In-Stock

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$0.470

37,500

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$0.470

Component Sense

UK . 24,911 parts In-Stock

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Vyrian

USA . 10,892 parts In-Stock

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10,892

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ComSIT Distribution GmbH

Germany . 2,719 parts In-Stock

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2,719

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NAC Semi

USA . 2,500 parts In-Stock

1+ parts

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$0.481

2,500

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$0.481

Speed Components Ltd

Israel . 18 parts In-Stock

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18

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NexGen Digital

USA . 1 parts In-Stock

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1

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Distributors (Availability)

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Semicontronic

India . 26,314 parts In-Stock

1+ parts

$0.180

100+ parts

$0.176

1k+ parts

$0.175

10k+ parts

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26,314

$0.180

$0.176

$0.175

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Ampacity Inc.

Singapore . 11,316 parts In-Stock

1+ parts

$0.249

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11,316

$0.249

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Continental Prestige Electronics

USA . 4,848 parts In-Stock

1+ parts

$0.486

100+ parts

-

1k+ parts

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10k+ parts

$0.477

4,848

$0.486

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-

$0.477

Argo Parts USA

USA . 261 parts In-Stock

1+ parts

$0.486

100+ parts

-

1k+ parts

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10k+ parts

$0.472

261

$0.486

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-

$0.472

Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.583

100+ parts

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1k+ parts

$0.559

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100

$0.583

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$0.559

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Aztec Data Supply Inc.

USA . 269 parts In-Stock

1+ parts

$1.220

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269

$1.220

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Advanced Electronics

New Zealand . 42 parts In-Stock

1+ parts

$1.331

100+ parts

$1.211

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$1.091

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42

$1.331

$1.211

$1.091

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Modulus Dynamics

Lithuania . 9,914 parts In-Stock

1+ parts

$1.737

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$1.737

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$1.737

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9,914

$1.737

$1.737

$1.737

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Corohmni

South Africa . 685 parts In-Stock

1+ parts

$1.763

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685

$1.763

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Kepictronics

USA . 306,000 parts In-Stock

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Lucentia Tech

USA . 50,870 parts In-Stock

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$1.720

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$1.685

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$1.685

50,870

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$1.720

$1.685

$1.685

iodParts Technologies Inc.

India . 26,046 parts In-Stock

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Perfect Parts

USA . 11,200 parts In-Stock

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RC Electronics

USA . 7,500 parts In-Stock

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Futuretech Components

Singapore . 2,500 parts In-Stock

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Eastek

USA . 2,500 parts In-Stock

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$0.800

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2,500

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$0.800

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Infinite Electronics LLP (Excess)

. 1,207 parts In-Stock

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1,207

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Robosynatics

Brazil . 100 parts In-Stock

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100

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S.R.D Solutions

India . 100 parts In-Stock

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100

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Overview

Discover the Vishay Intertechnology SI4056DY-T1-GE3, a high-quality Small Signal Field Effect Transistor designed for switching applications. With its N-channel configuration and built-in diode, this transistor offers reliable performance and efficient operation. Perfect for a variety of electronic devices, this enhancement mode transistor provides a breakthrough in power management. Trust Vishay Intertechnology for top-notch components that deliver exceptional value and precision engineering. Elevate your projects with the SI4056DY-T1-GE3 and experience innovation at its finest.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy packaging provides durability and protection for the transistor, ensuring long-lasting performance.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically offer higher mobility and faster switching speeds, making them ideal for applications requiring high performance.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode simplifies the circuit design, reducing the need for additional components and saving space.

Transistor Application: SWITCHING

Designed for switching applications, providing efficient control over the flow of current in electronic circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient mounting on circuit boards, saving assembly time and space.

Minimum DS Breakdown Voltage: 100 V

With a minimum breakdown voltage of 100V, this transistor can handle high voltages, making it suitable for a wide range of applications.

Maximum Drain Current (ID): 7.3 A

High maximum drain current rating allows for the handling of larger currents, making this transistor suitable for high-power applications.

Maximum Drain-Source On Resistance: 0.023 ohm

Low on-resistance results in minimal power loss and efficient conduction, improving overall performance.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability and stable performance, ensuring consistent operation over time.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand a peak reflow temperature for up to 30 seconds, making it suitable for automated assembly processes.

Technical Specifications

Small Signal Field Effect Transistors (FET) SI4056DY-T1-GE3 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Vishay Intertechnology

Specs

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (ID):

7.3 A

Maximum Drain-Source On Resistance:

.023 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

MS-012AA

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SI4056DY-T1-GE3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Vishay Intertechnology

Vishay Intertechnology, Inc. is a renowned American manufacturer of discrete semiconductors and passive electronic components that have been used in many consumer products and industrial applications worldwide. Founded by Polish-born businessman Felix Zandman in 1962, Vishay has grown to become one of the world's largest manufacturers of these components, with a strong presence in every major market around the globe. The company also offers value-added solutions such as its patented passive components, replacing a number of legacy parts with more reliable, cost effective solutions.

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Management team

Executive Chairman of the Board, Chief Business Development Officer

Marc Zandman

Chief Executive Officer, President, and Director

Joel Smejkal

Executive Vice President and Chief Financial Officer

Lori Lipcaman

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

Itzehoe - Fab Phase 1

Fabrication

Fab Initiation

2025

Germany

Itzehoe

Wafer Capacity

2025

US - Fab 3

Fabrication

Fab Initiation

1986

USA

Santa Clara

Wafer Capacity

24,500

1986

24,500

US - Fab 2

Fabrication

Fab Initiation

1972

USA

Santa Clara

Wafer Capacity

8,000

1972

8,000

Austria

Fabrication

Fab Initiation

1984

Austria

Vöcklabruck

Wafer Capacity

25,000

1984

25,000

Taiwan

Fabrication

Fab Initiation

1967

Taiwan

Hsintien

Wafer Capacity

12,000

1967

12,000

Italy - Fab 8

Fabrication

Fab Initiation

1961

Canada

Torino

Wafer Capacity

15,000

1961

15,000

Israel

Fabrication

Fab Initiation

2000

Israel

Yokneam Illit

Wafer Capacity

400

2000

400

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