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TRF37C75IDSGR

Texas Instruments

TRF37C75IDSGR by Texas Instruments

TRF37C75IDSGR by Texas Instruments is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, suitable for various RF applications. With a max input power of 10 dBm, it is ideal for amplifying signals in the frequency range while maintaining low power consumption.

Median Price

$1.400

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 402,467 parts In-Stock

1+ parts

$1.087

100+ parts

$0.836

1k+ parts

$0.440

10k+ parts

-

402,467

$1.087

$0.836

$0.440

-

Mouser Electronics

USA . 13,628 parts In-Stock

1+ parts

$1.400

100+ parts

$1.050

1k+ parts

$0.778

10k+ parts

$0.675

13,628

$1.400

$1.050

$0.778

$0.675

DigiKey

USA . 2,880 parts In-Stock

1+ parts

$1.560

100+ parts

$1.089

1k+ parts

$0.667

10k+ parts

-

2,880

$1.560

$1.089

$0.667

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,415 parts In-Stock

1+ parts

$0.568

100+ parts

-

1k+ parts

-

10k+ parts

-

3,415

$0.568

-

-

-

Digiode

USA . 1,217 parts In-Stock

1+ parts

$1.033

100+ parts

-

1k+ parts

-

10k+ parts

-

1,217

$1.033

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 139,712 parts In-Stock

1+ parts

$0.483

100+ parts

$0.471

1k+ parts

$0.469

10k+ parts

-

139,712

$0.483

$0.471

$0.469

-

Ampacity Inc.

Singapore . 139,384 parts In-Stock

1+ parts

$0.483

100+ parts

-

1k+ parts

-

10k+ parts

-

139,384

$0.483

-

-

-

Corohmni

South Africa . 462 parts In-Stock

1+ parts

$0.568

100+ parts

-

1k+ parts

-

10k+ parts

-

462

$0.568

-

-

-

Parana Technologies

USA . 1,229 parts In-Stock

1+ parts

$0.811

100+ parts

-

1k+ parts

$1.786

10k+ parts

-

1,229

$0.811

-

$1.786

-

ChromeModa Solutions

Germany . 3,599 parts In-Stock

1+ parts

$0.911

100+ parts

$0.747

1k+ parts

-

10k+ parts

-

3,599

$0.911

$0.747

-

-

IDEA Electronic Components Group

UK . 1,517 parts In-Stock

1+ parts

$0.911

100+ parts

-

1k+ parts

$0.820

10k+ parts

-

1,517

$0.911

-

$0.820

-

Corphita

USA . 3,804 parts In-Stock

1+ parts

$0.978

100+ parts

-

1k+ parts

-

10k+ parts

-

3,804

$0.978

-

-

-

Lixinc

USA . 17,244 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

17,244

-

-

-

-

A-Z Elektronik GmbH

Germany . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,000

-

-

-

-

DigiPath Technology Company

USA . 1,647 parts In-Stock

1+ parts

-

100+ parts

$0.821

1k+ parts

-

10k+ parts

-

1,647

-

$0.821

-

-

Overview

Enhance your RF and microwave applications with the TRF37C75IDSGR by Texas Instruments. Manufactured with precision and expertise, this wideband low-power amplifier offers a remarkable gain of 18 dB without compromising on quality. With a rugged construction and high-performance capabilities, this component ensures reliability and efficiency in various electronic systems. From industrial automation to telecommunications, this amplifier provides seamless integration and superior functionality, making it an ideal choice for professionals seeking top-notch performance. Upgrade your projects today with the TRF37C75IDSGR and experience unparalleled value and benefits.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability while keeping the overall weight of the amplifier low.

Maximum Input Power (CW): 10 dBm

Can handle a relatively high input power without causing damage to the amplifier.

Power Supplies (V): 5

Operates on a commonly available voltage, making it easy to integrate into existing systems.

No. of Terminals: 8

Provides multiple connection points for versatile integration into different circuits.

Maximum Operating Temperature: 85 °C

Can operate in high temperature environments without performance degradation.

Minimum Operating Temperature: -40 °C

Can operate in low temperature environments without any issues.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures good conductivity and corrosion resistance for reliable performance over time.

Maximum Supply Current: 85 mA

Consumes low power, making it energy efficient and suitable for battery-powered applications.

RF or Microwave Device Type: WIDE BAND LOW POWER

Ideal for applications requiring wide bandwidth and low power consumption.

Characteristic Impedance: 50 ohm

Matches standard impedance for seamless integration into RF systems.

Gain: 18 dB

Provides a significant boost in signal strength for improved performance.

Minimum Operating Frequency: 40 MHz

Can handle lower frequency signals, making it versatile for various applications.

Mounting Feature: SURFACE MOUNT

Easy to mount on PCBs for convenient installation.

Maximum Operating Frequency: 4000 MHz

Supports high frequency signals for a wide range of applications.

Technical Specifications

RF & Microwave Amplifiers TRF37C75IDSGR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

85 mA

Terminal Finish:

NICKEL PALLADIUM GOLD

Trade Compliance

TRF37C75IDSGR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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