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TRF37C75IDSGT

Texas Instruments

TRF37C75IDSGT by Texas Instruments

TRF37C75IDSGT by Texas Instruments is a wide band low power RF amplifier with 18 dB gain and 50 ohm impedance. It operates from 40 MHz to 4000 MHz, with max input power of 10 dBm. Ideal for applications requiring surface mount components in RF and microwave systems.

Median Price

$1.190

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 3,615 parts In-Stock

1+ parts

$1.183

100+ parts

$0.977

1k+ parts

$0.528

10k+ parts

-

3,615

$1.183

$0.977

$0.528

-

Chip1Stop

Japan . 108 parts In-Stock

1+ parts

$1.190

100+ parts

-

1k+ parts

-

10k+ parts

-

108

$1.190

-

-

-

DigiKey

USA . 750 parts In-Stock

1+ parts

$1.650

100+ parts

$1.234

1k+ parts

$1.095

10k+ parts

$0.972

750

$1.650

$1.234

$1.095

$0.972

Mouser Electronics

USA . 266 parts In-Stock

1+ parts

$1.690

100+ parts

$1.000

1k+ parts

$0.876

10k+ parts

$0.827

266

$1.690

$1.000

$0.876

$0.827

Arrow

USA . 250 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.727

10k+ parts

$0.687

250

-

-

$0.727

$0.687

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,810 parts In-Stock

1+ parts

$0.727

100+ parts

-

1k+ parts

-

10k+ parts

-

4,810

$0.727

-

-

-

Digiode

USA . 1,723 parts In-Stock

1+ parts

$1.124

100+ parts

-

1k+ parts

-

10k+ parts

-

1,723

$1.124

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 614 parts In-Stock

1+ parts

$0.620

100+ parts

-

1k+ parts

-

10k+ parts

-

614

$0.620

-

-

-

Semicontronic

India . 563 parts In-Stock

1+ parts

$0.620

100+ parts

$0.604

1k+ parts

$0.601

10k+ parts

-

563

$0.620

$0.604

$0.601

-

Corohmni

South Africa . 325 parts In-Stock

1+ parts

$0.727

100+ parts

-

1k+ parts

-

10k+ parts

-

325

$0.727

-

-

-

Component Stockers USA

USA . 1,064 parts In-Stock

1+ parts

$0.760

100+ parts

$0.730

1k+ parts

-

10k+ parts

-

1,064

$0.760

$0.730

-

-

Corphita

USA . 3,131 parts In-Stock

1+ parts

$1.065

100+ parts

-

1k+ parts

-

10k+ parts

-

3,131

$1.065

-

-

-

Parana Technologies

USA . 1,762 parts In-Stock

1+ parts

$1.890

100+ parts

-

1k+ parts

$2.432

10k+ parts

-

1,762

$1.890

-

$2.432

-

DigiPath Technology Company

USA . 956 parts In-Stock

1+ parts

$2.082

100+ parts

-

1k+ parts

-

10k+ parts

-

956

$2.082

-

-

-

IDEA Electronic Components Group

UK . 552 parts In-Stock

1+ parts

$2.124

100+ parts

-

1k+ parts

$1.912

10k+ parts

-

552

$2.124

-

$1.912

-

ChromeModa Solutions

Germany . 397 parts In-Stock

1+ parts

$2.124

100+ parts

$1.742

1k+ parts

-

10k+ parts

-

397

$2.124

$1.742

-

-

Advanced Electronics

New Zealand . 1,000 parts In-Stock

1+ parts

$3.198

100+ parts

$2.910

1k+ parts

$2.622

10k+ parts

-

1,000

$3.198

$2.910

$2.622

-

Perfect Parts

USA . 1,400 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,400

-

-

-

-

Overview

Enhance your RF and microwave amplification with the TRF37C75IDSGT by Texas Instruments. Crafted with precision and expertise, this wide band low power amplifier offers unparalleled performance and reliability. From its durable plastic/epoxy package body material to its nickel palladium gold terminal finish, every detail is designed to exceed expectations. Whether you're in telecommunications, aerospace, or industrial applications, this component boasts a gain of 18 dB and a frequency range from 40 MHz to 4000 MHz, ensuring seamless integration and optimal signal amplification. Elevate your projects with the superior quality and value of the TRF37C75IDSGT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material offers good durability and resistance to environmental factors, making the product suitable for a wide range of applications.

Maximum Input Power (CW): 10 dBm

With a maximum input power of 10 dBm, this amplifier can handle moderate power levels effectively, making it versatile for various RF and microwave applications.

Construction: COMPONENT

Component construction allows for easy integration into different systems and circuits, providing flexibility and customization options for users.

Power Supplies (V): 5

Operating at a standard 5V supply voltage, this amplifier is compatible with common power sources, simplifying its integration into existing systems.

No. of Terminals: 8

Having 8 terminals provides multiple connection points for interfacing with other components or devices, enhancing the amplifier's functionality and versatility.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85°C, this amplifier can withstand elevated temperatures without compromising performance, ensuring reliable operation in various environments.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C allows the amplifier to function effectively in cold environments, making it suitable for a wide range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel-palladium-gold terminal finish provides good conductivity and corrosion resistance, ensuring reliable connections and long-term performance of the amplifier.

Maximum Supply Current: 85 mA

Operating at a maximum supply current of 85 mA, this amplifier offers efficient power consumption, making it suitable for low-power applications where energy efficiency is crucial.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power device, this amplifier is capable of operating across a broad frequency range while consuming minimal power, making it an ideal choice for applications requiring both frequency agility and energy efficiency.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohms, this amplifier is compatible with standard RF and microwave components, ensuring seamless integration into existing systems without impedance mismatches.

Gain: 18 dB

Offering a gain of 18 dB, this amplifier can significantly boost the signal strength, enhancing the overall performance of the system and enabling reliable communication over long distances.

Minimum Operating Frequency: 40 MHz

With a minimum operating frequency of 40 MHz, this amplifier can support a wide range of RF and microwave signals, making it suitable for diverse applications requiring signal amplification.

Mounting Feature: SURFACE MOUNT

Featuring a surface mounting feature, this amplifier can be easily installed on circuit boards or other surfaces, simplifying the assembly process and saving space in compact systems.

Maximum Operating Frequency: 4000 MHz

Capable of operating at frequencies up to 4000 MHz, this amplifier is ideal for high-frequency applications where signal amplification is needed, making it a versatile choice for various RF and microwave systems.

Technical Specifications

RF & Microwave Amplifiers TRF37C75IDSGT attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

85 mA

Terminal Finish:

NICKEL PALLADIUM GOLD

Trade Compliance

TRF37C75IDSGT RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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