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TRF37C73IDSGR

Texas Instruments

TRF37C73IDSGR by Texas Instruments

TRF37C73IDSGR by Texas Instruments is a wide band low power RF amplifier with 18 dB gain, operating from 1 MHz to 6 GHz. It has a max input power of 10 dBm and operates on a 3.3V supply, drawing a max current of 65 mA. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

Median Price

$0.962

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 50,242 parts In-Stock

1+ parts

$1.065

100+ parts

$0.819

1k+ parts

$0.431

10k+ parts

-

50,242

$1.065

$0.819

$0.431

-

Rochester

USA . 1,153 parts In-Stock

1+ parts

-

100+ parts

$0.842

1k+ parts

$0.699

10k+ parts

$0.623

1,153

-

$0.842

$0.699

$0.623

DigiKey

USA . 1,153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.050

10k+ parts

-

1,153

-

-

$1.050

-

Verical

USA . 1,153 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.874

10k+ parts

$0.779

1,153

-

-

$0.874

$0.779

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,072 parts In-Stock

1+ parts

$0.569

100+ parts

-

1k+ parts

-

10k+ parts

-

3,072

$0.569

-

-

-

Vyrian

USA . 2,456 parts In-Stock

1+ parts

$0.599

100+ parts

-

1k+ parts

-

10k+ parts

-

2,456

$0.599

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 17,673 parts In-Stock

1+ parts

$0.510

100+ parts

-

1k+ parts

-

10k+ parts

-

17,673

$0.510

-

-

-

Semicontronic

India . 17,581 parts In-Stock

1+ parts

$0.510

100+ parts

$0.497

1k+ parts

$0.495

10k+ parts

-

17,581

$0.510

$0.497

$0.495

-

Corphita

USA . 1,988 parts In-Stock

1+ parts

$0.539

100+ parts

-

1k+ parts

-

10k+ parts

-

1,988

$0.539

-

-

-

Corohmni

South Africa . 397 parts In-Stock

1+ parts

$0.599

100+ parts

-

1k+ parts

-

10k+ parts

-

397

$0.599

-

-

-

Parana Technologies

USA . 2,289 parts In-Stock

1+ parts

$1.488

100+ parts

-

1k+ parts

$2.162

10k+ parts

-

2,289

$1.488

-

$2.162

-

DigiPath Technology Company

USA . 2,132 parts In-Stock

1+ parts

$1.639

100+ parts

$1.507

1k+ parts

-

10k+ parts

-

2,132

$1.639

$1.507

-

-

IDEA Electronic Components Group

UK . 330 parts In-Stock

1+ parts

$1.672

100+ parts

-

1k+ parts

$1.505

10k+ parts

-

330

$1.672

-

$1.505

-

ChromeModa Solutions

Germany . 271 parts In-Stock

1+ parts

$1.672

100+ parts

$1.371

1k+ parts

-

10k+ parts

-

271

$1.672

$1.371

-

-

A-Z Elektronik GmbH

Germany . 6,924 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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6,924

-

-

-

-

Authorized Procurement Solutions

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,000

-

-

-

-

Overview

Elevate your RF and microwave amplifier game with the TRF37C73IDSGR by Texas Instruments! This top-quality component offers unrivaled performance and reliability, backed by the trusted name of TI. Ideal for a wide range of applications, this amplifier provides a powerful 18 dB gain and operates at frequencies ranging from 1 MHz to 6000 MHz. With its durable construction and maximum input power of 10 dBm, the TRF37C73IDSGR is sure to enhance your projects with precision and efficiency. Upgrade your RF and microwave systems today with this cutting-edge amplifier from Texas Instruments!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable package material ensures ease of handling and long-term reliability.

Maximum Input Power (CW): 10 dBm

Can handle relatively high input power levels, making it suitable for a wide range of applications.

Construction: COMPONENT

Component construction allows for easy integration into existing circuit designs.

Power Supplies (V): 3.3

Operates on a standard power supply voltage, making it easy to incorporate into various systems.

No. of Terminals: 8

Sufficient number of terminals for connection and control within a circuit.

Maximum Operating Temperature: 85 °C

Can operate in high-temperature environments without performance degradation.

Minimum Operating Temperature: -40 °C

Can operate in low-temperature environments without loss of functionality.

Terminal Finish: NICKEL PALLADIUM GOLD

High-quality terminal finish for improved electrical conductivity and corrosion resistance.

Maximum Supply Current: 65 mA

Low supply current requirement for efficient power consumption.

RF or Microwave Device Type: WIDE BAND LOW POWER

Wideband operation and low power consumption make it versatile and energy-efficient.

Characteristic Impedance: 50 ohm

Matches standard impedance levels for seamless integration into RF systems.

Gain: 18 dB

Provides significant signal amplification for improved performance.

Minimum Operating Frequency: 1 MHz

Can operate at low frequencies for a wide range of applications.

Mounting Feature: SURFACE MOUNT

Surface mount design for easy and secure installation on circuit boards.

Maximum Operating Frequency: 6000 MHz

High operating frequency range enables compatibility with various RF systems.

Technical Specifications

RF & Microwave Amplifiers TRF37C73IDSGR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

6000 MHz

Minimum Operating Frequency:

1 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

3.3

RF or Microwave Device Type:

Maximum Supply Current:

65 mA

Terminal Finish:

NICKEL PALLADIUM GOLD

Trade Compliance

TRF37C73IDSGR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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