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TRF37B75IDSGR

Texas Instruments

TRF37B75IDSGR by Texas Instruments

TRF37B75IDSGR by Texas Instruments is a wide band low power RF amplifier with 15dB gain, operating from 40MHz to 4000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for applications requiring high frequency amplification in RF and microwave systems.

Median Price

$1.488

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 32,222 parts In-Stock

1+ parts

$1.087

100+ parts

$0.836

1k+ parts

$0.440

10k+ parts

-

32,222

$1.087

$0.836

$0.440

-

Mouser Electronics

USA . 370 parts In-Stock

1+ parts

$1.890

100+ parts

-

1k+ parts

$0.896

10k+ parts

$0.746

370

$1.890

-

$0.896

$0.746

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,538 parts In-Stock

1+ parts

$1.033

100+ parts

-

1k+ parts

-

10k+ parts

-

1,538

$1.033

-

-

-

Vyrian

USA . 6,199 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,199

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,046 parts In-Stock

1+ parts

$0.481

100+ parts

$0.469

1k+ parts

$0.467

10k+ parts

-

16,046

$0.481

$0.469

$0.467

-

Corohmni

South Africa . 204 parts In-Stock

1+ parts

$0.566

100+ parts

-

1k+ parts

-

10k+ parts

-

204

$0.566

-

-

-

Corphita

USA . 1,390 parts In-Stock

1+ parts

$0.978

100+ parts

-

1k+ parts

-

10k+ parts

-

1,390

$0.978

-

-

-

Parana Technologies

USA . 1,811 parts In-Stock

1+ parts

$1.274

100+ parts

$118.355

1k+ parts

$1.147

10k+ parts

-

1,811

$1.274

$118.355

$1.147

-

DigiPath Technology Company

USA . 1,465 parts In-Stock

1+ parts

$1.403

100+ parts

-

1k+ parts

-

10k+ parts

-

1,465

$1.403

-

-

-

ChromeModa Solutions

Germany . 5,342 parts In-Stock

1+ parts

$1.432

100+ parts

$1.174

1k+ parts

-

10k+ parts

-

5,342

$1.432

$1.174

-

-

IDEA Electronic Components Group

UK . 1,211 parts In-Stock

1+ parts

$1.432

100+ parts

-

1k+ parts

$1.289

10k+ parts

-

1,211

$1.432

-

$1.289

-

Overview

Elevate your RF and microwave signal amplification with the TRF37B75IDSGR from Texas Instruments. Crafted with precision and expertise, this component delivers unparalleled performance and reliability. Whether you're looking to enhance communication systems, radar applications, or wireless infrastructure, this wide band low power device offers a seamless solution. With a compact design and high-quality construction, this amplifier guarantees optimal efficiency and durability. Stay ahead of the curve in the ever-evolving world of technology with the TRF37B75IDSGR - the perfect choice for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the amplifier, ensuring it can withstand various environmental conditions.

Maximum Input Power (CW): 10 dBm

With a maximum input power of 10 dBm, this amplifier can handle high power levels without distortion, making it suitable for demanding RF applications.

Construction: COMPONENT

The component construction allows for easy integration into existing RF systems, making this amplifier versatile and convenient to use.

Power Supplies (V): 5

Operating at 5 volts, this amplifier is power-efficient and can be easily powered by most standard power sources.

No. of Terminals: 8

Having 8 terminals provides flexibility in connecting the amplifier to other components, allowing for customization and optimization of the RF system.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this amplifier can operate reliably in high-temperature environments without overheating.

Minimum Operating Temperature: -40 °C

The amplifier can also operate in low-temperature conditions down to -40°C, ensuring its functionality in a wide range of temperatures.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish provides excellent conductivity and corrosion resistance, ensuring reliable signal transmission and longevity of the amplifier.

Maximum Supply Current: 85 mA

Operating at a maximum supply current of 85 mA, this amplifier is power-efficient and consumes low power, making it suitable for battery-operated devices.

RF or Microwave Device Type: WIDE BAND LOW POWER

Being a wide band low power amplifier, this device is suitable for applications requiring broad frequency coverage and low power consumption.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohm, this amplifier is compatible with standard RF systems, ensuring easy integration and optimum performance.

Gain: 15 dB

Featuring a gain of 15 dB, this amplifier can boost the signal strength significantly, making it ideal for applications where signal amplification is required.

Minimum Operating Frequency: 40 MHz

Operating at a minimum frequency of 40 MHz, this amplifier is suitable for a wide range of RF applications, from lower frequency systems to higher frequency ones.

Mounting Feature: SURFACE MOUNT

The surface mounting feature allows for easy and secure installation of the amplifier on PCBs, saving space and facilitating efficient RF system design.

Maximum Operating Frequency: 4000 MHz

With a maximum operating frequency of 4000 MHz, this amplifier can cover a broad spectrum of frequencies, making it versatile for various RF applications.

Technical Specifications

RF & Microwave Amplifiers TRF37B75IDSGR attributes and parameters. Explore more RF & Microwave Amplifiers devices from Texas Instruments

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

15 dB

Maximum Input Power (CW):

10 dBm

JESD-609 Code:

e4

Mounting Feature:

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Frequency:

4000 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

Power Supplies (V):

5

RF or Microwave Device Type:

Maximum Supply Current:

85 mA

Terminal Finish:

NICKEL PALLADIUM GOLD

Trade Compliance

TRF37B75IDSGR RF & Microwave trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.33.00.01

SB

8542.33.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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