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TMS5703134CPGEQQ1

Texas Instruments

TMS5703134CPGEQQ1 by Texas Instruments

TMS5703134CPGEQQ1 by Texas Instruments is a 32-bit microcontroller with 144 terminals, operating at up to 80 MHz. Ideal for automotive applications, it features 24-Ch 12-Bit ADC channels and connectivity options like CAN, I2C, SCI, and SPI. With a wide temperature range of -40 to 125 °C, this Cortex-R4F CPU family device offers robust performance in demanding environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,408 parts In-Stock

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Digiode

USA . 250 parts In-Stock

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250

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AZTECH Wire

Italy . 418 parts In-Stock

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$14.127

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One Stop Electronics

USA . 432 parts In-Stock

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$23.000

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Parana Technologies

USA . 133 parts In-Stock

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$23.323

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$23.964

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$23.964

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DigiPath Technology Company

USA . 2,233 parts In-Stock

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$25.682

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$23.627

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$25.682

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ChromeModa Solutions

Germany . 6,435 parts In-Stock

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$26.206

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$21.489

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IDEA Electronic Components Group

UK . 1,666 parts In-Stock

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$26.206

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$24.896

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$23.585

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$23.585

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Corphita

USA . 4,936 parts In-Stock

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Microchip USA

USA . 494 parts In-Stock

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Overview

Unleash the power of innovation with the TMS5703134CPGEQQ1 microcontroller by Texas Instruments. Harnessing cutting-edge technology and superior quality, this device offers unparalleled performance in automotive applications. With advanced features such as multiple ADC channels and DMA capabilities, this microcontroller provides unmatched efficiency and reliability. Elevate your projects to new heights with the TMS5703134CPGEQQ1 and experience seamless integration, high-speed processing, and optimal functionality. Join the ranks of industry leaders who trust Texas Instruments for top-of-the-line solutions that deliver exceptional value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and reliability for the microcontroller, making it suitable for various applications.

Maximum Supply Voltage: 1.32 V

Allows for a wide range of compatible supply voltages, providing flexibility in powering the microcontroller.

Bit Size: 32

The 32-bit architecture enables high-performance computing capabilities for the microcontroller.

ADC Channels: YES

Supports Analog to Digital Conversion, allowing for interfacing with various sensors and input devices.

ROM Words: 3145728

With a large ROM capacity, the microcontroller can store a significant amount of program data and instructions.

RAM Bytes: 262144

Generous RAM size for temporary data storage and efficient operation of the microcontroller.

Maximum Clock Frequency: 80 MHz

Provides high-speed processing capabilities for executing tasks quickly and efficiently.

Connectivity: CAN(3), I2C, SCI(2), SPI(4)

Offers multiple communication options for interfacing with other devices and systems, enhancing versatility.

Technical Specifications

Microcontrollers TMS5703134CPGEQQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

0

Bit Size:

32

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

0

JESD-30 Code:

S-PQFP-G144

JESD-609 Code:

e4

Length:

20 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

64

No. of Terminals:

144

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

NO

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

QFP144,.87SQ,20

Package Shape:

Package Style (Meter):

FLATPACK, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

262144

ROM Words:

3145728

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.6 mm

Speed:

160 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

350 mA

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

20 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(3), I2C, SCI(2), SPI(4)

Peripherals:

DMA(16), POR, TIMER(41), WDT

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TMS5703134CPGEQQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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