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TMS5701225BZWTQQ1

Texas Instruments

TMS5701225BZWTQQ1 by Texas Instruments

TMS5701225BZWTQQ1 by Texas Instruments is a 32-bit microcontroller with 13-bit address bus, operating at up to 80 MHz. Ideal for automotive applications, it features 24 ADC channels, 16-bit external data bus width, and connectivity options like CAN, I2C, SCI, and SPI.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,210 parts In-Stock

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Digiode

USA . 1,949 parts In-Stock

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Semi Source

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One Stop Electronics

USA . 282 parts In-Stock

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$8.000

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AZTECH Wire

Italy . 190 parts In-Stock

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$13.378

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Parana Technologies

USA . 759 parts In-Stock

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$37.322

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DigiPath Technology Company

USA . 1,051 parts In-Stock

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$41.096

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$37.809

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$41.096

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ChromeModa Solutions

Germany . 5,699 parts In-Stock

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$41.935

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$34.387

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IDEA Electronic Components Group

UK . 2,304 parts In-Stock

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$41.935

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$39.838

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$37.742

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Corphita

USA . 4,465 parts In-Stock

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Microchip USA

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Overview

Experience the unmatched quality and reliability of Texas Instruments with the TMS5701225BZWTQQ1 microcontroller. This versatile device is perfect for a wide range of applications in the automotive industry, offering advanced features like ADC channels, DMA support, and a maximum clock frequency of 80 MHz. With a focus on performance and efficiency, this microcontroller delivers exceptional value and benefits to customers looking for cutting-edge technology for their projects. Trust Texas Instruments for superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and reliability of the product.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly.

Maximum Supply Voltage: 1.32 V

Support for a maximum supply voltage of 1.32 V enables versatile applications.

Address Bus Width: 13

A wide address bus width of 13 enhances memory addressing capabilities.

Screening Level: AEC-Q100

Compliance with AEC-Q100 automotive quality standards ensures high reliability in automotive applications.

Package Shape: SQUARE

The square package shape helps in space-efficient PCB design and layout.

Bit Size: 32

A 32-bit architecture enables high-performance computing and processing capabilities.

Power Supplies (V): 1.2,3.3

Support for multiple power supply voltages (1.2V and 3.3V) offers flexibility in powering the device.

No. of Terminals: 337

A high number of terminals (337) allow for more I/O options and connectivity features.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

The grid array, low profile, and fine pitch package style enables high-density mounting and space-saving design.

Minimum Supply Voltage: 1.14 V

Support for a minimum supply voltage of 1.14V ensures reliable operation even at low power levels.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C allows for operation in harsh environmental conditions.

CPU Family: CORTEX-R4F

The Cortex-R4F CPU family offers high-performance computing and real-time processing capabilities.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40°C ensures reliable operation even in extreme cold conditions.

Terminal Finish: TIN SILVER COPPER

The terminal finish of tin silver copper provides excellent conductivity and corrosion resistance.

ADC Channels: YES

Built-in analog to digital converters enable precise and accurate measurements of analog signals.

DMA Channels: YES

Direct memory access channels improve data transfer efficiency and reduce CPU load.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and assembly processes.

ROM Words: 1310720

A large ROM size of 1310720 words allows for storing a significant amount of program and data.

Maximum Seated Height: 1.4 mm

The low maximum seated height of 1.4mm enables compact device design and integration.

Width: 16 mm

A width of 16mm offers a balance between space-saving design and functional layout.

Data EEPROM Size: 64K

The 64K data EEPROM size allows for non-volatile storage of critical data and settings.

External Data Bus Width: 16

A wide external data bus width of 16 enhances data transfer speed and efficiency.

Peripherals: DMA(16), POR, PWM(14), TIMER(45), WDT

A rich set of peripherals including DMA, POR, PWM, Timer, and WDT enhance the functionality and versatility of the device.

Maximum Clock Frequency: 80 MHz

The high maximum clock frequency of 80MHz enables fast processing and real-time operation.

Maximum Time At Peak Reflow Temperature (s): 30

Support for 30 seconds at peak reflow temperature ensures proper soldering and reliability during assembly.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and thermal stability of the device.

Length: 16 mm

A length of 16mm offers a compact form factor for easy integration into various applications.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures reliable operation in automotive environments with varying temperatures.

Peripheral IC Type: MICROCONTROLLER, RISC

The microcontroller RISC architecture provides efficient and optimized processing for embedded applications.

RAM Bytes: 196608

A large RAM size of 196608 bytes enables efficient data storage and processing during runtime.

Technology: CMOS

CMOS technology offers low power consumption and high integration capabilities for energy-efficient designs.

Terminal Form: BALL

The ball terminal form provides reliable connectivity and easy soldering during assembly.

Analog To Digital Convertors: 24-Ch 12-Bit

24-channel 12-bit analog to digital converters enable precise and accurate conversion of analog signals.

Maximum Supply Current: 375 mA

Support for a maximum supply current of 375mA ensures stable and reliable operation under varying loads.

Nominal Supply Voltage: 1.2 V

The nominal supply voltage of 1.2V ensures compatibility with standard power sources.

PWM Channels: YES

Built-in PWM channels enable precise control of analog output signals for various applications.

Connectivity: CAN(3), I2C, SCI(2), SPI(5)

Multiple connectivity options including CAN, I2C, SCI, and SPI allow for seamless integration into different communication networks.

ROM Programmability: FLASH

Flash programmability enables easy and efficient updating of firmware and software on the device.

Terminal Pitch: 0.8 mm

A terminal pitch of 0.8mm allows for high-density mounting and compact PCB design.

Moisture Sensitivity Level (MSL): 3

Moisture sensitivity level 3 indicates that the device can withstand moderate exposure to moisture during storage and handling.

Speed: 180 rpm

Operating at a speed of 180rpm allows for efficient processing and execution of tasks in real-time applications.

On Chip Program ROM Width: 8

An on-chip program ROM width of 8 provides sufficient storage for program code and instructions.

No. of I/O Lines: 101

A high number of I/O lines (101) offer flexible input and output options for connecting to external devices and peripherals.

Technical Specifications

Microcontrollers TMS5701225BZWTQQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

13

Bit Size:

32

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

16 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

101

No. of Terminals:

337

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

196608

ROM Words:

1310720

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.4 mm

Speed:

180 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

375 mA

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(3), I2C, SCI(2), SPI(5)

Peripherals:

DMA(16), POR, PWM(14), TIMER(45), WDT

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TMS5701225BZWTQQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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