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TMS5701114BZWTQQ1

Texas Instruments

TMS5701114BZWTQQ1 by Texas Instruments

TMS5701114BZWTQQ1 by Texas Instruments is a 32-bit microcontroller with 1048576 ROM words, 131072 RAM bytes, and 24-Ch 12-Bit ADC channels. Ideal for automotive applications, it offers connectivity options like CAN, I2C, LIN, MIBSPI, SCI, and SPI along with PWM channels and a max clock frequency of 80 MHz.

Median Price

-

Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 7,563 parts In-Stock

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Digiode

USA . 1,867 parts In-Stock

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AZTECH Wire

Italy . 840 parts In-Stock

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$11.882

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One Stop Electronics

USA . 371 parts In-Stock

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$14.000

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Parana Technologies

USA . 1,548 parts In-Stock

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IDEA Electronic Components Group

UK . 993 parts In-Stock

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$64.966

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993

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ChromeModa Solutions

Germany . 905 parts In-Stock

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$72.185

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$59.192

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QUARKTWIN TECHNOLOGY LTD

USA . 10,516 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 825 parts In-Stock

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Microchip USA

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Overview

Unlock the power of cutting-edge technology with the TMS5701114BZWTQQ1 microcontroller from Texas Instruments. Designed with precision and reliability in mind, this microcontroller is a game-changer in the automotive industry, offering unparalleled performance and efficiency. With advanced features like multiple ADC channels, DMA channels, and PWM channels, this microcontroller is versatile and adaptable to a wide range of applications. Experience seamless connectivity with CAN, I2C, LIN, MIBSPI, SCI, and SPI interfaces. Trust Texas Instruments for quality and innovation - elevate your projects with the TMS5701114BZWTQQ1 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and resistance to environmental factors, making the product suitable for various applications.

Maximum Supply Voltage: 1.32 V

The high maximum supply voltage allows for flexibility in power supply options, which can be advantageous in different power supply scenarios.

Bit Size: 32

A 32-bit architecture enables higher performance and processing capabilities compared to lower bit sizes, making the product suitable for demanding applications.

CPU Family: CORTEX-R4F

Being part of the CORTEX-R4F family means the product benefits from ARM's advanced architecture design, providing high performance and efficiency for real-time applications.

Peripheral IC Type: MICROCONTROLLER, RISC

RISC (Reduced Instruction Set Computing) architecture allows for efficient use of instructions, enabling faster processing and lower power consumption, making it a good choice for embedded systems.

Maximum Clock Frequency: 80 MHz

A high clock frequency allows for fast operation and real-time processing capabilities, making the product suitable for applications that require quick responses.

Connectivity: CAN(3), I2C, LIN, MIBSPI(3), SCI(2), SPI(2)

The multiple connectivity options provide versatility in communication interfaces, allowing the product to integrate with a wide range of devices and systems.

Technical Specifications

Microcontrollers TMS5701114BZWTQQ1 attributes and parameters. Explore more Microcontrollers devices from Texas Instruments

Specs

ADC Channels:

YES

Address Bus Width:

13

Bit Size:

32

CPU Family:

CORTEX-R4F

Maximum Clock Frequency:

80 MHz

DAC Channels:

NO

DMA Channels:

YES

External Data Bus Width:

16

JESD-30 Code:

S-PBGA-B337

JESD-609 Code:

e1

Length:

16 mm

Moisture Sensitivity Level (MSL):

3

No. of I/O Lines:

101

No. of Terminals:

337

On Chip Program ROM Width:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

PWM Channels:

YES

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA337,19X19,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2,3.3

Qualification:

Not Qualified

RAM Bytes:

131072

ROM Words:

1048576

ROM Programmability:

FLASH

Screening Level:

AEC-Q100

Maximum Seated Height:

1.4 mm

Speed:

180 rpm

Sub-Category:

Microcontrollers

Maximum Supply Current:

375 mA

Maximum Supply Voltage:

1.32 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

16 mm

Peripheral IC Type:

Data EEPROM Size:

64K

Connectivity:

CAN(3), I2C, LIN, MIBSPI(3), SCI(2), SPI(2)

Peripherals:

CAP(6), CRC(2), QEP(2), POR, PWM(14), TIMER(44)

Analog To Digital Convertors:

24-Ch 12-Bit

Trade Compliance

TMS5701114BZWTQQ1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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