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TMS320VC5510GGW2

Texas Instruments

TMS320VC5510GGW2 by Texas Instruments

TMS320VC5510GGW2 by Texas Instruments is a 16-bit DSP with 32-bit external data bus, operating at max 50 MHz. Ideal for digital signal processing applications, it features low power mode, 32768 RAM words, and operates b/w 0-85°C temperature range.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,972 parts In-Stock

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Digiode

USA . 4,538 parts In-Stock

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Semi Source

USA . 31 parts In-Stock

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LWI Electronics Inc

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One Stop Electronics

USA . 1,120 parts In-Stock

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$5.000

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AZTECH Wire

Italy . 564 parts In-Stock

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$6.219

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Corohmni

South Africa . 1,161 parts In-Stock

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Parana Technologies

USA . 1,302 parts In-Stock

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IDEA Electronic Components Group

UK . 1,945 parts In-Stock

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$45.206

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$42.946

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$40.685

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ChromeModa Solutions

Germany . 1,739 parts In-Stock

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$45.206

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$37.069

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QUARKTWIN TECHNOLOGY LTD

USA . 8,849 parts In-Stock

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Corphita

USA . 4,272 parts In-Stock

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Microchip USA

USA . 3,468 parts In-Stock

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DigiPath Technology Company

USA . 447 parts In-Stock

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Overview

Experience the superior quality and performance of Texas Instruments with the TMS320VC5510GGW2 Digital Signal Processor. Perfect for a wide range of applications, this DSP offers unparalleled value and benefits to customers. With its advanced technology, low power mode, and high clock frequency, this product is designed to meet all your processing needs. Trust in Texas Instruments for reliable, top-of-the-line solutions that deliver exceptional results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and long-lasting performance.

Surface Mount: YES

Easy to solder onto circuit boards, saving time and effort during assembly.

Maximum Supply Voltage: 1.65 V

Efficient power usage and lower risk of damage from high voltage.

Address Bus Width: 22

Allows for effective memory addressing and data transfer capabilities.

Package Shape: SQUARE

Compact design for efficient use of space on circuit boards.

Bit Size: 16

Provides high processing power and precision for digital signal processing tasks.

Power Supplies (V): 1.6,3.3

Versatile power options for compatibility with a range of systems.

No. of Terminals: 240

Plenty of connection points for interfacing with other components.

Package Style (Meter): GRID ARRAY, LOW PROFILE, FINE PITCH

Innovative packaging design for efficient signal processing and minimal footprint.

Minimum Supply Voltage: 1.55 V

Allows for a lower power consumption and extended battery life.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperature environments for versatility.

Minimum Operating Temperature: 0 °C

Works reliably in cold conditions without sacrificing performance.

Terminal Finish: TIN LEAD

Ensures reliable electrical connections for consistent signal processing.

Terminal Position: BOTTOM

Facilitates easy board mounting and secure connections.

Maximum Seated Height: 1.4 mm

Low profile design for compact system integration.

RAM Words: 32768

Sufficient memory capacity for storing and processing data efficiently.

Width: 15 mm

Compact size for easy integration into various electronic devices.

Boundary Scan: YES

Allows for easy testing and debugging of the signal processing unit.

External Data Bus Width: 32

Supports high-speed data transfer for rapid signal processing tasks.

Maximum Clock Frequency: 50 MHz

High clock speed for speedy data processing and real-time applications.

Internal Bus Architecture: MULTIPLE

Efficient data routing and processing for enhanced performance.

Length: 15 mm

Compact form factor for space-saving integration in electronic devices.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Versatile functionality for diverse signal processing applications.

Technology: CMOS

Low power consumption and high noise immunity for reliable operation.

Terminal Form: BALL

Secure mounting and reliable electrical connections for stable performance.

Nominal Supply Voltage: 1.6 V

Optimal operating voltage for efficient signal processing.

Terminal Pitch: 0.8 mm

Fine pitch design for precise connections and signal transmission.

Format: FIXED POINT

Specific data format for accurate digital signal processing tasks.

Moisture Sensitivity Level (MSL): 3

Resistant to moisture damage for reliable performance in various environments.

Low Power Mode: YES

Energy-efficient mode for extended battery life and reduced power consumption.

Technical Specifications

Digital Signal Processors (DSPs) TMS320VC5510GGW2 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

ALSO REQUIRES 3.3V SUPPLY

Address Bus Width:

22

Barrel Shifter:

NO

Bit Size:

16

Boundary Scan:

YES

Maximum Clock Frequency:

50 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B240

JESD-609 Code:

e0

Length:

15 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

3

No. of Terminals:

240

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA240,17X17,32

Package Shape:

Package Style (Meter):

GRID ARRAY, LOW PROFILE, FINE PITCH

Power Supplies (V):

1.6,3.3

Qualification:

Not Qualified

RAM Words:

32768

Maximum Seated Height:

1.4 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.65 V

Minimum Supply Voltage:

1.55 V

Nominal Supply Voltage:

1.6 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Width:

15 mm

Peripheral IC Type:

Trade Compliance

TMS320VC5510GGW2 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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