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TMS320DM648ZUT1

Texas Instruments

TMS320DM648ZUT1 by Texas Instruments

TMS320DM648ZUT1 by Texas Instruments is a 32-bit DSP with 1100 MHz clock frequency, 8192 RAM words, and 529 terminals. It is used in digital signal processing applications requiring high-speed data processing and low power consumption.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,813 parts In-Stock

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Digiode

USA . 2,706 parts In-Stock

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Pride Electronics

USA . 18 parts In-Stock

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One Stop Electronics

USA . 1,310 parts In-Stock

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$9.000

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AZTECH Wire

Italy . 514 parts In-Stock

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$18.628

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Parana Technologies

USA . 135 parts In-Stock

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$66.223

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ChromeModa Solutions

Germany . 6,185 parts In-Stock

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$74.408

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$61.015

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IDEA Electronic Components Group

UK . 2,029 parts In-Stock

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$74.408

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$70.688

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$66.967

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Corohmni

South Africa . 307 parts In-Stock

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$80.108

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Kepictronics

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DigiPath Technology Company

USA . 431 parts In-Stock

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$67.086

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Corphita

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Microchip USA

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Overview

Unlock the power of cutting-edge technology with the TMS320DM648ZUT1 by Texas Instruments, a leader in quality semiconductor manufacturing. As a Digital Signal Processor (DSP), this product offers unparalleled performance and efficiency in a compact package. Perfect for a wide range of applications, from telecommunications to industrial automation, this DSP provides customers with exceptional value, benefits, and advantages. Elevate your projects with the TMS320DM648ZUT1 and experience the difference that Texas Instruments makes in innovation and excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is commonly used for electronic components as it is lightweight, durable, and cost-effective.

Surface Mount: YES

Surface mount technology allows for more compact and efficient PCB designs.

Maximum Supply Voltage: 1.26 V

Operates within a safe voltage range to prevent damage to the DSP.

Address Bus Width: 32

Wide address bus width allows for efficient data processing and memory access.

Package Shape: SQUARE

Square package shape helps in easy placement and alignment on the PCB.

Bit Size: 32

32-bit processing capability for fast and efficient computations.

Power Supplies (V): 1.2,1.8,3.3

Supports multiple power supply voltages to cater to different system requirements.

No. of Terminals: 529

High number of terminals provide a connection interface for various external components.

Package Style (Meter): GRID ARRAY, FINE PITCH

Grid array and fine pitch package style allows for high density mounting on the PCB.

Minimum Supply Voltage: 1.14 V

Allows for operation at low voltage levels for power-efficient applications.

Maximum Operating Temperature: 90 °C

Wide operating temperature range for versatile usage in different environments.

Minimum Operating Temperature: 0 °C

Can operate reliably even in low temperature conditions.

Terminal Finish: TIN SILVER COPPER

Provides a reliable and durable finish for the terminal connections.

Terminal Position: BOTTOM

Bottom terminal position for easy mounting and connection on the PCB.

Maximum Seated Height: 3.3 mm

Low profile design for space-constrained applications.

RAM Words: 8192

Ample RAM capacity for storing and processing data efficiently.

Width: 19 mm

Compact width for easy integration into various electronic devices.

Boundary Scan: YES

Boundary scan feature for efficient testing and debugging of the DSP.

External Data Bus Width: 32

Matched external data bus width for seamless data transfer.

Maximum Clock Frequency: 1100 MHz

High clock frequency for fast signal processing and data throughput.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures safe reflow soldering process within specified time limits.

Peak Reflow Temperature °C: 245

High peak reflow temperature for reliable and durable solder connections.

Internal Bus Architecture: MULTIPLE

Multiple internal bus architecture for efficient data routing and processing.

Length: 19 mm

Compact length for space-saving designs.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Versatile peripheral IC type for diverse application possibilities.

Technology: CMOS

CMOS technology for low power consumption and high performance.

Terminal Form: BALL

Ball terminal form for easy soldering and reliable electrical connections.

Nominal Supply Voltage: 1.2 V

Nominal supply voltage for stable and efficient operation.

Terminal Pitch: 0.8 mm

Fine terminal pitch for high-density mounting on the PCB.

Format: FIXED POINT

Fixed-point format for accurate and efficient numerical computations.

Moisture Sensitivity Level (MSL): 4

MSL 4 level for robust moisture resistance during storage and operation.

Low Power Mode: YES

Low power mode for energy-efficient operation and extended battery life.

Technical Specifications

Digital Signal Processors (DSPs) TMS320DM648ZUT1 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 OR 1.8 V FOR I/O SUPPLY

Address Bus Width:

32

Barrel Shifter:

NO

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

1100 MHz

External Data Bus Width:

32

Format:

FIXED POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B529

JESD-609 Code:

e1

Length:

19 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

529

Maximum Operating Temperature:

90 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA529,23X23,32

Package Shape:

Package Style (Meter):

GRID ARRAY, FINE PITCH

Peak Reflow Temperature (C):

245

Power Supplies (V):

1.2,1.8,3.3

Qualification:

Not Qualified

RAM Words:

8192

Maximum Seated Height:

3.3 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Voltage:

1.26 V

Minimum Supply Voltage:

1.14 V

Nominal Supply Voltage:

1.2 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

Terminal Pitch:

.8 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Width:

19 mm

Peripheral IC Type:

Trade Compliance

TMS320DM648ZUT1 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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