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TMS320C44GFW60

Texas Instruments

TMS320C44GFW60 by Texas Instruments

TMS320C44GFW60 by Texas Instruments is a 32-bit DSP with 24-bit address bus, 32-bit external data bus, and operates at max frequency of 60 MHz. Widely used in digital signal processing applications due to its low power mode, barrel shifter feature, and floating-point format support.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,903 parts In-Stock

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Vyrian

USA . 2,095 parts In-Stock

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One Stop Electronics

USA . 763 parts In-Stock

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$8.000

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$8.000

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AZTECH Wire

Italy . 277 parts In-Stock

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$9.536

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Semicontronic

India . 668 parts In-Stock

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$12.000

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$11.700

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$11.640

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$12.000

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$11.640

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Parana Technologies

USA . 176 parts In-Stock

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$19.121

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$19.169

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ChromeModa Solutions

Germany . 6,072 parts In-Stock

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$21.484

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$17.617

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$21.484

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IDEA Electronic Components Group

UK . 363 parts In-Stock

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$21.484

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$20.410

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$19.336

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$19.336

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Corohmni

South Africa . 96 parts In-Stock

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$59.576

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QUARKTWIN TECHNOLOGY LTD

USA . 11,455 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 390 parts In-Stock

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$19.370

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Microchip USA

USA . 325 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the TMS320C44GFW60 by Texas Instruments. As a leader in digital signal processors, Texas Instruments delivers unparalleled quality and reliability. This versatile device is perfect for a wide range of applications, offering customers value through its high performance and innovative features. Experience seamless operation and unmatched efficiency with the TMS320C44GFW60, setting new standards in the world of DSPs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and cost-effective.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards.

Maximum Supply Voltage: 5.25 V

Ensures stable and reliable operation within specified voltage range.

Address Bus Width: 24

Provides a wide address bus for efficient data processing and memory addressing.

Package Shape: SQUARE

Square shape allows for compact and space-saving design.

Bit Size: 32

Provides high processing power and performance.

Power Supplies (V): 5

Operates efficiently at standard power supply voltage.

No. of Terminals: 388

Offers ample connectivity options for versatile applications.

Package Style (Meter): GRID ARRAY

Grid array packaging ensures easy installation and secure connections.

Minimum Supply Voltage: 4.75 V

Ensures proper functionality even at lower supply voltages.

Maximum Operating Temperature: 85 °C

Can operate effectively under high temperature conditions.

Minimum Operating Temperature: 0 °C

Capable of functioning in wide temperature range.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy soldering and connection.

Maximum Seated Height: 2.5 mm

Low seated height enables compact and slim device designs.

RAM Words: 8192

Ample RAM capacity for storing and processing data efficiently.

Width: 35 mm

Compact width for easy integration into various electronic devices.

Boundary Scan: YES

Boundary scan feature for testing and debugging of circuit connections.

External Data Bus Width: 32

Wide external data bus for high-speed data transfer.

Maximum Clock Frequency: 60 MHz

High clock frequency for fast data processing and task execution.

Maximum Time At Peak Reflow Temperature (s): 20

Handles peak reflow temperature for efficient soldering.

Peak Reflow Temperature °C: 220

Can withstand high reflow temperatures during manufacturing processes.

Internal Bus Architecture: MULTIPLE

Utilizes multiple internal buses for improved data flow and processing capabilities.

Length: 35 mm

Compact length for space-saving device designs.

Peripheral IC Type: DIGITAL SIGNAL PROCESSOR, OTHER

Versatile peripheral IC type for various signal processing applications.

Technology: CMOS

CMOS technology offers low power consumption and high performance.

Terminal Form: BALL

Ball terminal form for secure and reliable connections.

Maximum Supply Current: 950 mA

Efficiently operates within specified supply current limits.

Nominal Supply Voltage: 5 V

Stable and standard nominal supply voltage for consistent performance.

Terminal Pitch: 1.27 mm

Optimal terminal pitch for easy soldering and connections on PCBs.

Format: FLOATING POINT

Utilizes floating-point format for accurate and complex mathematical calculations.

Moisture Sensitivity Level (MSL): 4

MSL 4 ensures safe handling and storage in moderate humidity conditions.

Low Power Mode: YES

Includes low power mode option for energy-efficient operation.

Barrel Shifter: YES

Incorporates barrel shifter for efficient and fast data manipulation and shifting operations.

Technical Specifications

Digital Signal Processors (DSPs) TMS320C44GFW60 attributes and parameters. Explore more Digital Signal Processors (DSPs) devices from Texas Instruments

Specs

Address Bus Width:

24

Barrel Shifter:

YES

Bit Size:

32

Boundary Scan:

YES

Maximum Clock Frequency:

60 MHz

External Data Bus Width:

32

Format:

FLOATING POINT

Internal Bus Architecture:

MULTIPLE

JESD-30 Code:

S-PBGA-B388

Length:

35 mm

Low Power Mode:

YES

Moisture Sensitivity Level (MSL):

4

No. of Terminals:

388

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

BGA

Package Equivalence Code:

BGA388,26X26,50

Package Shape:

Package Style (Meter):

GRID ARRAY

Peak Reflow Temperature (C):

220

Power Supplies (V):

5

Qualification:

Not Qualified

RAM Words:

8192

Maximum Seated Height:

2.5 mm

Sub-Category:

Digital Signal Processors

Maximum Supply Current:

950 mA

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

20

Width:

35 mm

Peripheral IC Type:

Trade Compliance

TMS320C44GFW60 Peripheral ICs trade compliance attributes, and parameters.

ECCN

3A991.A.2

ECCN Governance

EAR

HTS

8542.31.00.01

SB

8542.31.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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