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TLV5510INSR

Texas Instruments

TLV5510INSR by Texas Instruments

TLV5510INSR by Texas Instruments is an 8-bit ADC with 10 MHz sample rate, 0.3906% linearity error, and 3.3 V max analog input voltage. Ideal for applications requiring high-speed data conversion in a compact form factor.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,523 parts In-Stock

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6,523

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Digiode

USA . 2,442 parts In-Stock

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2,442

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Distributors (Availability)

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One Stop Electronics

USA . 767 parts In-Stock

1+ parts

$8.000

100+ parts

-

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767

$8.000

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AZTECH Wire

Italy . 244 parts In-Stock

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$13.626

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244

$13.626

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Parana Technologies

USA . 1,651 parts In-Stock

1+ parts

$17.323

100+ parts

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$17.535

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1,651

$17.323

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$17.535

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DigiPath Technology Company

USA . 889 parts In-Stock

1+ parts

$19.075

100+ parts

$17.549

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889

$19.075

$17.549

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ChromeModa Solutions

Germany . 3,812 parts In-Stock

1+ parts

$19.464

100+ parts

$15.960

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3,812

$19.464

$15.960

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IDEA Electronic Components Group

UK . 1,185 parts In-Stock

1+ parts

$19.464

100+ parts

$18.491

1k+ parts

$17.518

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1,185

$19.464

$18.491

$17.518

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A-Z Elektronik GmbH

Germany . 6,702 parts In-Stock

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Corphita

USA . 3,427 parts In-Stock

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Kepictronics

USA . 3,200 parts In-Stock

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3,200

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Overview

Unlock the power of precision with the TLV5510INSR Analog-to-Digital Converter by Texas Instruments. Designed with top-notch quality and expertise, this product offers unmatched accuracy and reliability in a compact package. Ideal for a range of applications, this converter boasts a fast sampling rate of 10 MHz and a maximum linearity error of just 0.3906%. Whether you're in the automotive, industrial, or consumer electronics industry, this versatile converter delivers value and performance, making it the perfect choice for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic and epoxy materials provide good insulation and protection for the internal components, making the product durable and reliable.

No. of Bits: 8

8-bit resolution allows for sufficient accuracy in converting analog signals to digital, suitable for various applications.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows the converter to perform reliably even in demanding environments.

Sample Rate: 10 MHz

High sample rate enables fast and accurate conversion of analog signals, making it suitable for high-speed applications.

Technology: CMOS

CMOS technology ensures low power consumption and high noise immunity, making the product energy-efficient and reliable.

Technical Specifications

Analog-to-Digital Converters TLV5510INSR attributes and parameters. Explore more Analog-to-Digital Converters devices from Texas Instruments

Converter Specifications

No. of Analog In Channels:

1

No. of Functions:

1

No. of Bits:

8

Sub-Category:

Analog to Digital Converters

Output Bit Code:

Binary

Output Format:

Parallel, 8 Bits

Maximum Linearity Error (EL):

0.3906 %

Sample Rate:

10 MHz

Electrical Specifications

Power Supplies:

3 V

Minimum Analog Input Voltage:

0 mV

Maximum Analog Input Voltage:

3.3 V

Nominal Supply Voltage:

3 V

Operating Conditions

Minimum Operating Temperature:

-35 °C (-31 °F)

Maximum Operating Temperature:

85 °C (185 °F)

Temperature Grade:

Form Factor

Terminal Position:

Dual

No. of Terminals:

24

Terminal Form:

Terminal Pitch:

0.05 in (1.27 mm)

Surface Mount:

Yes

Width:

0.209 in (5.3 mm)

Length:

0.591 in (15 mm)

Maximum Seated Height:

0.079 in (2 mm)

Packaging

Package Body Material:

Plastic/Epoxy

Package Style:

Small Outline

Package Shape:

Package Equivalence Code:

SOP24,.3

Package Code:

SOP

Standards and Codes

JESD-30 Code:

R-PDSO-G24

Qualified:

No

Trade Compliance

TLV5510INSR Converters trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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