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TIL112

Texas Instruments

TIL112 by Texas Instruments

TIL112 by Texas Instruments is an Optocoupler Transistor Output with a max forward current of 0.1A and isolation voltage of 1500V. It operates b/w -55°C to 155°C, has a min current transfer ratio of 20%, and response time of 2μs. Ideal for applications requiring high voltage isolation and signal transmission in harsh environments.

Median Price

$0.230

Lifecycle Status

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Rochester

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American Microsemiconductor Inc.

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Parana Technologies

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ChromeModa Solutions

Germany . 6,533 parts In-Stock

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IDEA Electronic Components Group

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AZTECH Wire

Italy . 799 parts In-Stock

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Component Stockers USA

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DigiPath Technology Company

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Overview

Enhance your electronic projects with the TIL112 by Texas Instruments, a high-quality optocoupler transistor output that offers reliable performance and exceptional durability. Manufactured by a trusted industry leader, this versatile component is ideal for a wide range of applications, providing seamless signal isolation and efficient power transfer. With a maximum isolation voltage of 1500V and a fast response time of 0.000002s, the TIL112 delivers exceptional value and peace of mind to customers seeking superior connectivity solutions. Upgrade your designs today with the TIL112 and experience the benefits of precision engineering at its finest.

Feature Benefit Bullets

Maximum Forward Current: 0.1 A

This allows for a high level of forward current to pass through the optocoupler, making it suitable for applications that require a moderate amount of current.

Maximum Operating Temperature: 155 °C

With a high maximum operating temperature, this optocoupler can withstand heat-intensive environments, ensuring reliable operation.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature allows this optocoupler to function effectively even in freezing conditions, making it versatile in various settings.

Terminal Finish: Tin/Lead (Sn/Pb)

With a tin/lead terminal finish, this optocoupler ensures a reliable and durable electrical connection for optimal performance.

Maximum Power Dissipation: 0.25 W

The low power dissipation of this optocoupler helps in minimizing energy loss and heat generation during operation.

Minimum Current Transfer Ratio: 20 %

With a high current transfer ratio, this optocoupler efficiently transfers signals between input and output, ensuring accurate signal transmission.

Maximum Response Time: 0.000002 s

The ultra-fast response time of this optocoupler enables quick signal processing, making it ideal for time-sensitive applications.

Maximum Isolation Voltage: 1500 V

The high isolation voltage rating ensures the safety and protection of the circuit components by providing a strong barrier against voltage spikes and surges.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process of this optocoupler onto circuit boards, ensuring secure and stable placement.

Maximum Forward Voltage: 1.5 V

The low forward voltage drop ensures efficient energy conversion and minimizes power loss during operation, contributing to overall energy efficiency.

Technical Specifications

Optocoupler Transistor Outputs TIL112 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Minimum Current Transfer Ratio:

20 %

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

1500 V

JESD-609 Code:

e0

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Power Dissipation:

.25 W

Maximum Response Time:

.000002 s

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

Trade Compliance

TIL112 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5980-01-197-2499, 5980011972499, 5980-00-607-9104, 5980006079104

NIIN

011972499, 006079104

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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