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TIL108

Texas Instruments

TIL108 by Texas Instruments

TIL108 by Texas Instruments is an optocoupler with a max forward current of 0.05A and isolation voltage of 1000V. With a min operating temperature of -55°C and max response time of 5μs, it is ideal for applications requiring high-speed signal transmission in industrial settings.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 5,243 parts In-Stock

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Digiode

USA . 3,945 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 9 parts In-Stock

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Holdelec - ElecDif-Pro

France . 9 parts In-Stock

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R&J Components

USA . 3 parts In-Stock

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Parana Technologies

USA . 778 parts In-Stock

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$0.561

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$1.659

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DigiPath Technology Company

USA . 1,039 parts In-Stock

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$0.617

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IDEA Electronic Components Group

UK . 2,020 parts In-Stock

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$0.630

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$0.567

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$0.630

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ChromeModa Solutions

Germany . 1,151 parts In-Stock

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$0.630

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$0.517

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AZTECH Wire

Italy . 570 parts In-Stock

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$9.054

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One Stop Electronics

USA . 134 parts In-Stock

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Corphita

USA . 1,987 parts In-Stock

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Overview

Enhance your electronics projects with the TIL108 optocoupler transistor outputs from Texas Instruments. With a high-quality design and reliable performance, this component offers excellent isolation voltage and fast response time, making it ideal for a wide range of applications. Whether you're working on robotics, automation, or power supply circuits, the TIL108 provides the value and benefits you need to bring your designs to life. Trust Texas Instruments for superior components that deliver exceptional results every time.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

This optocoupler transistor output can handle a maximum forward current of 0.05 A, making it suitable for various low power applications.

Maximum Operating Temperature: 155 °C

With a high maximum operating temperature of 155°C, this optocoupler can withstand elevated temperatures without compromising performance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature of -55°C allows this optocoupler to function in cold environments as well.

Maximum Power Dissipation: 0.15 W

With a maximum power dissipation of 0.15 W, this optocoupler can efficiently handle power without overheating.

Minimum Current Transfer Ratio: 11 %

The minimum current transfer ratio of 11% ensures reliable signal transfer between the input and output, making this optocoupler a dependable choice.

Maximum Response Time: 0.000005 s

With a very low maximum response time of 0.000005 seconds, this optocoupler can quickly switch signals, ideal for applications requiring fast response times.

Maximum Isolation Voltage: 1000 V

The high maximum isolation voltage of 1000 V ensures electrical safety and isolation between input and output circuits, making this optocoupler suitable for high voltage applications.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature provides secure and reliable mounting of this optocoupler on a PCB, ensuring stability and ease of installation.

Maximum Forward Voltage: 1.5 V

With a low maximum forward voltage of 1.5 V, this optocoupler minimizes power loss and improves efficiency in the system.

Technical Specifications

Optocoupler Transistor Outputs TIL108 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Minimum Current Transfer Ratio:

11 %

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

1000 V

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-55 Cel

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.000005 s

Sub-Category:

Optocoupler - Transistor Outputs

Trade Compliance

TIL108 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.A

ECCN Governance

EAR

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5980-00-468-6038, 5980004686038, 5980-00-543-2143, 5980005432143

NIIN

004686038, 005432143

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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