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TIL103

Texas Instruments

TIL103 by Texas Instruments

TIL103 by Texas Instruments is a single optocoupler with max forward current of 0.04A, 35V min collector-emitter breakdown voltage, and 150% nominal current transfer ratio. It's used in applications requiring high isolation voltage up to 1000V, low dark current of 100nA, and reliable transistor output optocoupling.

Median Price

$35.000

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DF Sales Co.

USA . 9 parts In-Stock

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$35.000

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DF Sales Co.

USA . 9 parts In-Stock

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Component Electronics Inc.

Canada . 1 parts In-Stock

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$38.460

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$28.850

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$25.000

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Vyrian

USA . 4,834 parts In-Stock

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Digiode

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R&J Components

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Holdelec - ElecDif-Pro

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LittleDiode

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Kallista Electronics Ltd

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Halfin

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MISTER SPROCKETS

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Parana Technologies

USA . 1,074 parts In-Stock

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$0.570

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$1.664

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$0.570

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DigiPath Technology Company

USA . 1,517 parts In-Stock

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$0.627

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ChromeModa Solutions

Germany . 3,644 parts In-Stock

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$0.640

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$0.525

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IDEA Electronic Components Group

UK . 1,721 parts In-Stock

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$0.576

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AZTECH Wire

Italy . 253 parts In-Stock

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$14.884

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One Stop Electronics

USA . 894 parts In-Stock

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Corphita

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Assy Fe

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Overview

Experience superior quality and reliability with the TIL103 optocoupler transistor output by Texas Instruments. Designed for a wide range of applications, this single configuration device offers a maximum forward current of 0.04 A and a nominal current transfer ratio of 150%. With a minimum collector-emitter breakdown voltage of 35 V and maximum isolation voltage of 1000 V, the TIL103 provides unparalleled performance and safety. Trust in Texas Instruments to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy integration into various circuits without the need for additional components or complex wiring.

Maximum Forward Current: 0.04 A

With a high maximum forward current rating, this optocoupler can handle higher loads and provide reliable performance in demanding applications.

Optoelectronic Type: TRANSISTOR OUTPUT OPTOCOUPLER

Transistor output optocouplers offer fast switching speeds and low power consumption, making them suitable for applications requiring precise control and high efficiency.

Maximum Dark Current: 100 nA

Low dark current ensures minimal leakage current when the optocoupler is in the off state, contributing to better overall performance and accuracy.

Minimum Collector-emitter Breakdown Voltage: 35 V

High collector-emitter breakdown voltage provides protection against voltage spikes and ensures reliable operation in harsh environments.

Nominal Current Transfer Ratio: 150 %

A high current transfer ratio indicates strong signal amplification and accurate signal transmission, making this optocoupler ideal for precision applications.

Maximum Isolation Voltage: 1000 V

A high isolation voltage rating ensures safe operation and prevents signal interference, making this optocoupler suitable for high voltage applications and critical systems.

Technical Specifications

Optocoupler Transistor Outputs TIL103 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

35 V

Configuration:

SINGLE

Nominal Current Transfer Ratio:

150 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.04 A

Maximum Isolation Voltage:

1000 V

No. of Elements:

1

Optoelectronic Type:

Trade Compliance

TIL103 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5980-00-521-1729, 5980005211729

NIIN

005211729

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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