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TIL113

Texas Instruments

TIL113 by Texas Instruments

TIL113 by Texas Instruments is a single optocoupler with Darlington output. It has a max forward current of 0.1A, operating temp range from -55 to 155°C, and isolation voltage of 1500V. Ideal for applications requiring high current transfer ratio, low dark current, and fast response time in through-hole mounting setups.

Median Price

$0.500

Lifecycle Status

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1k+

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DigiKey

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TME

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American Microsemiconductor Inc.

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Ampacity Inc.

Singapore . 50,372 parts In-Stock

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DigiPath Technology Company

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IDEA Electronic Components Group

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Overview

Enhance the performance of your electronic circuits with the TIL113 optocoupler transistor outputs by Texas Instruments. Designed with precision and quality in mind, this single configuration optocoupler offers a wide range of applications including signal isolation and noise reduction. With a maximum operating temperature of 155°C and an impressive minimum current transfer ratio of 1000%, you can trust in the reliability and efficiency of this product. Upgrade your projects today with the TIL113 and experience the value and benefits it brings to your designs.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration simplifies installation and reduces complexity in the circuit design.

Maximum Forward Current: 0.1 A

Capable of handling a maximum forward current of 0.1 A, making it suitable for low to medium power applications.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

Darlington output optocoupler provides high current transfer ratio and is well-suited for applications requiring strong signal amplification.

Maximum Operating Temperature: 155 °C

High maximum operating temperature of 155°C allows for reliable performance even in challenging thermal environments.

Minimum Operating Temperature: -55 °C

Wide minimum operating temperature range of -55°C enables operation in cold conditions without compromising performance.

Maximum Power Dissipation: 0.25 W

Low power dissipation of 0.25 W ensures energy efficiency and reduces heat generation.

Minimum Current Transfer Ratio: 1000 %

High current transfer ratio of 1000% results in efficient signal transmission and improves overall system performance.

Maximum Dark Current: 100 nA

Low maximum dark current of 100 nA ensures minimal leakage current when the optocoupler is in the off state, enhancing signal clarity.

Maximum Response Time: 0.0003 s

Fast response time of 0.0003 s enables quick signal transmission and reduces delays in the circuit.

Minimum Collector-emitter Breakdown Voltage: 30 V

High minimum collector-emitter breakdown voltage of 30 V provides protection against voltage spikes and ensures long-term reliability.

Nominal Current Transfer Ratio: 1000 %

Consistent nominal current transfer ratio of 1000% ensures stable performance across different operating conditions.

Maximum Isolation Voltage: 1500 V

High maximum isolation voltage of 1500 V enhances electrical safety and protects sensitive components from potential damage.

Mounting Feature: THROUGH HOLE MOUNT

Through hole mounting feature offers secure and stable installation, suitable for applications where vibration or mechanical stress is a concern.

Maximum Forward Voltage: 1.5 V

Low maximum forward voltage of 1.5 V reduces power consumption and enhances energy efficiency in the circuit.

Technical Specifications

Optocoupler Transistor Outputs TIL113 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Minimum Collector-emitter Breakdown Voltage:

30 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

1000 %

Nominal Current Transfer Ratio:

1000 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.1 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

1500 V

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

155 Cel

Minimum Operating Temperature:

-55 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.25 W

Maximum Response Time:

.0003 s

Sub-Category:

Optocoupler - Transistor Outputs

Trade Compliance

TIL113 Optoelectronics trade compliance attributes, and parameters.

ECCN

3A001.A.2.A

ECCN Governance

EAR

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5980-01-016-1869, 5980010161869

NIIN

010161869

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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