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TIL109

Texas Instruments

TIL109 by Texas Instruments

TIL109 by Texas Instruments is an optocoupler transistor output with max forward current of 0.05A, response time of 5μs, and isolation voltage of 5000V. It operates b/w -40°C to 80°C, ideal for applications requiring high voltage isolation and fast response times in through-hole mounting setups.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,820 parts In-Stock

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4,820

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Digiode

USA . 2,844 parts In-Stock

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Parana Technologies

USA . 737 parts In-Stock

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$0.143

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$1.488

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737

$0.143

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$1.488

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DigiPath Technology Company

USA . 1,712 parts In-Stock

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$0.158

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$0.145

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$0.158

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ChromeModa Solutions

Germany . 4,484 parts In-Stock

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$0.161

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$0.132

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$0.161

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IDEA Electronic Components Group

UK . 1,194 parts In-Stock

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$0.161

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$0.145

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1,194

$0.161

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$0.145

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Ampacity Inc.

Singapore . 711 parts In-Stock

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$5.100

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711

$5.100

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One Stop Electronics

USA . 1,001 parts In-Stock

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$16.100

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1,001

$16.100

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Semicontronic

India . 238 parts In-Stock

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$17.100

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$16.672

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$16.587

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238

$17.100

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$16.587

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AZTECH Wire

Italy . 318 parts In-Stock

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$18.025

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Corphita

USA . 749 parts In-Stock

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749

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Corohmni

South Africa . 220 parts In-Stock

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Overview

Experience superior quality and reliability with the TIL109 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers cutting-edge technology for optocoupler transistor outputs. With a maximum isolation voltage of 5000V and a response time of just 0.000005s, this product offers unparalleled performance. From industrial automation to telecommunications, the TIL109 provides exceptional value and benefits for a wide range of applications. Trust Texas Instruments for top-of-the-line solutions that exceed your expectations.

Feature Benefit Bullets

Maximum Forward Current: 0.05 A

The low forward current ensures efficient power usage and prevents overheating, making it a reliable component for long-term use.

Maximum Operating Temperature: 80 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and maintain stable performance.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures allows this product to function in extreme cold conditions, offering versatility in various applications.

Maximum Power Dissipation: 0.15 W

The low power dissipation helps in keeping the component cool while operating, enhancing its reliability and longevity.

Minimum Current Transfer Ratio: 0.7 %

The high current transfer ratio ensures accurate signal transmission and efficient communication between different circuits.

Maximum Response Time: 0.000005 s

The ultra-fast response time enables quick signal processing, making this product suitable for high-speed applications that require rapid data transfer.

Maximum Isolation Voltage: 5000 V

The high isolation voltage provides reliable protection against electrical interference and ensures safe operation in potentially hazardous environments.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies the installation process and offers a secure connection, making it easier for manufacturers to integrate this component into their designs.

Maximum Forward Voltage: 1.9 V

The low forward voltage drop helps in minimizing power losses and improving overall efficiency, making this product an energy-efficient choice for electronic systems.

Technical Specifications

Optocoupler Transistor Outputs TIL109 attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Texas Instruments

Specs

Minimum Current Transfer Ratio:

.7 %

Maximum Forward Current:

.05 A

Maximum Forward Voltage:

1.9 V

Maximum Isolation Voltage:

5000 V

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

80 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Power Dissipation:

.15 W

Maximum Response Time:

.000005 s

Sub-Category:

Optocoupler - Transistor Outputs

Trade Compliance

TIL109 Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

NSN

5961-21-897-2183, 5961218972183

NIIN

218972183

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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