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H11G2TVM

Onsemi

H11G2TVM by Onsemi

The Onsemi H11G2TVM is a single optocoupler with a max forward current of 0.06A and Darlington output type. With a min operating temperature of -40°C and max isolation voltage of 7500V, it is ideal for applications requiring high current transfer ratio, such as industrial control systems and power supplies.

Median Price

$0.629

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 20 parts In-Stock

1+ parts

$0.629

100+ parts

$0.598

1k+ parts

$0.598

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20

$0.629

$0.598

$0.598

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

1+ parts

$0.453

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200

$0.453

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Digiode

USA . 1,720 parts In-Stock

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$0.598

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1,720

$0.598

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Vyrian

USA . 6,701 parts In-Stock

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Prism Electronics

USA . 24 parts In-Stock

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24

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Distributors (Availability)

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Corohmni

South Africa . 180 parts In-Stock

1+ parts

$0.444

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180

$0.444

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Argo Parts USA

USA . 2,536 parts In-Stock

1+ parts

$0.453

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$0.440

2,536

$0.453

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$0.440

Continental Prestige Electronics

USA . 761 parts In-Stock

1+ parts

$0.453

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-

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$0.444

761

$0.453

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$0.444

Netroflash

USA . 100 parts In-Stock

1+ parts

$0.453

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100

$0.453

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Semicontronic

India . 20 parts In-Stock

1+ parts

$0.530

100+ parts

$0.517

1k+ parts

$0.514

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20

$0.530

$0.517

$0.514

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Ampacity Inc.

Singapore . 18 parts In-Stock

1+ parts

$0.530

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18

$0.530

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Corphita

USA . 3,300 parts In-Stock

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$0.566

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3,300

$0.566

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Aztec Data Supply Inc.

USA . 2,302 parts In-Stock

1+ parts

$0.597

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2,302

$0.597

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Advanced Electronics

New Zealand . 20 parts In-Stock

1+ parts

$0.629

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$0.598

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$0.598

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20

$0.629

$0.598

$0.598

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AZTECH Wire

Italy . 479 parts In-Stock

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$5.935

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479

$5.935

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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7,000

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SupplyDigital Components

Austria . 5,998 parts In-Stock

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Perfect Parts

USA . 3,360 parts In-Stock

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TANS Electronics

Latvia . 2,918 parts In-Stock

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2,918

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Problanco Electronics

Mexico . 2,056 parts In-Stock

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2,056

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Kepictronics

USA . 2,000 parts In-Stock

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2,000

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UHIMA Technologies

Türkiye . 439 parts In-Stock

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439

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Supply Digital

USA . 118 parts In-Stock

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Kulean Microsystems

USA . 21 parts In-Stock

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Overview

Experience the superior quality and reliability of the H11G2TVM by Onsemi, a leading manufacturer in the industry. This optocoupler transistor output provides exceptional performance for a wide range of applications, offering unmatched value and benefits to customers. With its high current transfer ratio, low dark current, and excellent isolation voltage, the H11G2TVM ensures optimal functionality and safety in electronic circuits. Trust Onsemi to deliver cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Configuration: SINGLE

This single configuration allows for easy installation and connection in a variety of applications.

Maximum Forward Current: 0.06 A

The high maximum forward current ensures reliable performance and handling of power loads.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

The Darlington output optocoupler design provides high current transfer ratio and superior performance.

Maximum Operating Temperature: 100 °C

With a high maximum operating temperature, this product can withstand demanding environmental conditions.

Minimum Operating Temperature: -40 °C

The wide range of operating temperatures allows for flexibility in various working environments.

Terminal Finish: TIN

The TIN terminal finish ensures good connectivity and resistance to corrosion.

Maximum Power Dissipation: 0.26 W

The low maximum power dissipation helps in reducing heat generation and improving overall efficiency.

Minimum Current Transfer Ratio: 500 %

A high minimum current transfer ratio ensures accurate and reliable signal transmission.

Maximum Dark Current: 100 nA

The low maximum dark current allows for minimal leakage and improves overall performance.

Minimum Collector-emitter Breakdown Voltage: 80 V

The high minimum collector-emitter breakdown voltage ensures safety and protection of connected devices.

Nominal Current Transfer Ratio: 1000 %

A high nominal current transfer ratio indicates efficient signal transmission and control.

Maximum Isolation Voltage: 7500 V

The high maximum isolation voltage ensures electrical safety and protection against voltage spikes.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature facilitates easy and secure installation on circuit boards.

Maximum Forward Voltage: 1.5 V

The low maximum forward voltage helps in reducing power consumption and improving overall efficiency.

Technical Specifications

Optocoupler Transistor Outputs H11G2TVM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED, VDE APPROVED

Minimum Collector-emitter Breakdown Voltage:

80 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

500 %

Nominal Current Transfer Ratio:

1000 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.26 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

H11G2TVM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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