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H11G2SM

Onsemi

H11G2SM by Onsemi

The Onsemi H11G2SM is a single optocoupler with a Darlington output, featuring a max forward current of 0.06A and an isolation voltage of 7500V. With a min operating temperature of -40°C and max power dissipation of 0.26W, it is ideal for applications requiring high current transfer ratio, such as industrial control systems and power supplies.

Median Price

$0.479

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.474

100+ parts

$0.450

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$0.450

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-

100

$0.474

$0.450

$0.450

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Mouser Electronics

USA . 104 parts In-Stock

1+ parts

$1.070

100+ parts

$0.553

1k+ parts

$0.439

10k+ parts

$0.337

104

$1.070

$0.553

$0.439

$0.337

DigiKey

USA . 2,580 parts In-Stock

1+ parts

$1.210

100+ parts

$0.670

1k+ parts

$0.538

10k+ parts

$0.453

2,580

$1.210

$0.670

$0.538

$0.453

Verical

USA . 29,965 parts In-Stock

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$0.479

29,965

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$0.479

Arrow

USA . 2,000 parts In-Stock

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$0.320

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$0.320

Distributors (In-Stock)

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Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$0.386

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100

$0.386

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Digiode

USA . 2,421 parts In-Stock

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$0.450

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Vyrian

USA . 6,096 parts In-Stock

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Prism Electronics

USA . 30 parts In-Stock

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30

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 4,733 parts In-Stock

1+ parts

$0.185

100+ parts

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4,733

$0.185

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Semicontronic

India . 6,044 parts In-Stock

1+ parts

$0.303

100+ parts

$0.295

1k+ parts

$0.294

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6,044

$0.303

$0.295

$0.294

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Corohmni

South Africa . 260 parts In-Stock

1+ parts

$0.371

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260

$0.371

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Continental Prestige Electronics

USA . 3,386 parts In-Stock

1+ parts

$0.386

100+ parts

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10k+ parts

$0.378

3,386

$0.386

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$0.378

Argo Parts USA

USA . 557 parts In-Stock

1+ parts

$0.386

100+ parts

-

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$0.374

557

$0.386

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$0.374

Corphita

USA . 1,592 parts In-Stock

1+ parts

$0.427

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1,592

$0.427

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.474

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$0.450

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$0.450

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$0.474

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$0.450

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Perfect Parts

USA . 28,538 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,326 parts In-Stock

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SupplyDigital Components

Austria . 6,619 parts In-Stock

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Problanco Electronics

Mexico . 5,498 parts In-Stock

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Kulean Microsystems

USA . 3,336 parts In-Stock

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Supply Digital

USA . 2,522 parts In-Stock

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TANS Electronics

Latvia . 2,297 parts In-Stock

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Kepictronics

USA . 2,000 parts In-Stock

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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iodParts Technologies Inc.

India . 250 parts In-Stock

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UHIMA Technologies

Türkiye . 125 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.378

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$0.367

10k+ parts

$0.359

50

-

$0.378

$0.367

$0.359

Overview

Experience the superior quality and performance of the H11G2SM Optocoupler Transistor Output from Onsemi. As a trusted manufacturer, Onsemi delivers reliable and innovative solutions for various applications. This single configuration optocoupler offers a high current transfer ratio, low dark current, and excellent isolation voltage, making it ideal for use in a wide range of electronic devices. Enhance your projects with the value and benefits that the H11G2SM provides, ensuring optimal performance and efficiency every time.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration ensures easy installation and usage without the complexity of multiple components.

Maximum Forward Current: 0.06 A

High maximum forward current capability allows for stable and reliable operations under heavy loads.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

Darlington output optocoupler provides high current transfer ratio and low saturation voltage, making it ideal for high-performance applications.

Maximum Operating Temperature: 100 °C

Wide operating temperature range ensures the optocoupler can function in various environments without overheating.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for reliable performance even in harsh cold conditions.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and corrosion resistance, ensuring long-term reliability.

Maximum Power Dissipation: 0.26 W

Efficient power dissipation capability helps in maintaining stable performance and prolonging the optocoupler's lifespan.

Minimum Current Transfer Ratio: 500 %

High minimum current transfer ratio ensures accurate signal transmission and reduces the risk of signal loss or distortion.

Maximum Dark Current: 100 nA

Low dark current minimizes power consumption and interference, improving overall signal quality.

Minimum Collector-emitter Breakdown Voltage: 80 V

High breakdown voltage rating ensures the optocoupler can withstand voltage spikes and surges, enhancing system protection.

Nominal Current Transfer Ratio: 1000 %

High nominal current transfer ratio results in efficient signal amplification and transmission, improving system performance.

Maximum Isolation Voltage: 7500 V

High isolation voltage rating provides reliable electrical insulation and protects sensitive components from voltage spikes or surges.

Mounting Feature: SURFACE MOUNT

Surface mounting feature allows for easy and secure installation on PCBs, saving space and simplifying assembly processes.

Maximum Forward Voltage: 1.5 V

Low maximum forward voltage ensures efficient power usage and minimizes heat generation, contributing to overall energy efficiency.

Technical Specifications

Optocoupler Transistor Outputs H11G2SM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

80 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

500 %

Nominal Current Transfer Ratio:

1000 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.26 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

H11G2SM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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