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H11G2VM

Onsemi

H11G2VM by Onsemi

The Onsemi H11G2VM is a single optocoupler with a max forward current of 0.06A and Darlington output type. It operates b/w -40 to 100°C, has an isolation voltage of 7500V, and a min CTR of 500%. Ideal for applications requiring high-voltage isolation and signal amplification in various electronic circuits.

Median Price

$0.665

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$0.665

100+ parts

$0.632

1k+ parts

$0.632

10k+ parts

-

2,000

$0.665

$0.632

$0.632

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$0.524

100+ parts

-

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300

$0.524

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Digiode

USA . 1,073 parts In-Stock

1+ parts

$0.632

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1,073

$0.632

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Vyrian

USA . 1,739 parts In-Stock

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1,739

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Chip Stock

USA . 335 parts In-Stock

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335

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 323 parts In-Stock

1+ parts

$0.503

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-

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323

$0.503

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Aranea Global

USA . 100 parts In-Stock

1+ parts

$0.513

100+ parts

-

1k+ parts

$0.493

10k+ parts

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100

$0.513

-

$0.493

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Argo Parts USA

USA . 2,645 parts In-Stock

1+ parts

$0.524

100+ parts

-

1k+ parts

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10k+ parts

$0.508

2,645

$0.524

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-

$0.508

Continental Prestige Electronics

USA . 2,538 parts In-Stock

1+ parts

$0.524

100+ parts

-

1k+ parts

-

10k+ parts

$0.513

2,538

$0.524

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-

$0.513

Ampacity Inc.

Singapore . 1,636 parts In-Stock

1+ parts

$0.570

100+ parts

-

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1,636

$0.570

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Semicontronic

India . 1,631 parts In-Stock

1+ parts

$0.570

100+ parts

$0.556

1k+ parts

$0.553

10k+ parts

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1,631

$0.570

$0.556

$0.553

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Corphita

USA . 1,672 parts In-Stock

1+ parts

$0.598

100+ parts

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1,672

$0.598

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Aztec Data Supply Inc.

USA . 134 parts In-Stock

1+ parts

$0.618

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134

$0.618

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$0.665

100+ parts

$0.632

1k+ parts

$0.632

10k+ parts

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2,000

$0.665

$0.632

$0.632

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Metaverse IC Inc.

Canada . 36,530 parts In-Stock

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36,530

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QUARKTWIN TECHNOLOGY LTD

USA . 20,053 parts In-Stock

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20,053

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Kulean Microsystems

USA . 4,758 parts In-Stock

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4,758

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SupplyDigital Components

Austria . 3,494 parts In-Stock

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3,494

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Problanco Electronics

Mexico . 3,203 parts In-Stock

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3,203

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TANS Electronics

Latvia . 3,095 parts In-Stock

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3,095

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Perfect Parts

USA . 2,240 parts In-Stock

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Supply Digital

USA . 2,036 parts In-Stock

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2,036

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Glotronic Ltd.

UK . 1,740 parts In-Stock

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1,740

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UHIMA Technologies

Türkiye . 79 parts In-Stock

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79

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Overview

Unlock a world of possibilities with the H11G2VM by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-notch quality and reliability in their Optocoupler Transistor Outputs. This versatile product is perfect for a wide range of applications, offering customers exceptional value and superior performance. Trust Onsemi to provide you with the best - choose the H11G2VM for all your optoelectronic needs.

Feature Benefit Bullets

Configuration: SINGLE

Having a single configuration makes installation and setup simple and straightforward.

Maximum Forward Current: 0.06 A

With a maximum forward current of 0.06 A, this optocoupler can handle moderate power loads effectively.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

The Darlington output design ensures high current transfer ratio and fast response times.

Maximum Operating Temperature: 100 °C

Able to operate in temperatures up to 100°C, making it suitable for a wide range of environments.

Minimum Operating Temperature: -40 °C

Can also operate in low temperatures down to -40°C, providing versatility in various applications.

Terminal Finish: TIN

Tin terminal finish offers good conductivity and corrosion resistance for reliable performance.

Maximum Power Dissipation: 0.26 W

With a maximum power dissipation of 0.26 W, this optocoupler can handle heat effectively to prevent overheating.

Minimum Current Transfer Ratio: 500 %

A high minimum current transfer ratio of 500% ensures efficient signal transfer and accuracy.

Maximum Dark Current: 100 nA

Low dark current of 100 nA reduces signal interference and improves overall signal clarity.

Minimum Collector-emitter Breakdown Voltage: 80 V

The high minimum collector-emitter breakdown voltage of 80 V ensures protection against voltage spikes.

Nominal Current Transfer Ratio: 1000 %

A nominal current transfer ratio of 1000% indicates excellent signal amplification and accuracy.

Maximum Isolation Voltage: 7500 V

With a maximum isolation voltage of 7500 V, this optocoupler provides high voltage isolation for added safety.

Mounting Feature: THROUGH HOLE MOUNT

The through-hole mounting feature simplifies installation and ensures secure placement.

Maximum Forward Voltage: 1.5 V

With a low maximum forward voltage of 1.5 V, this optocoupler offers efficient power consumption and reduced heat generation.

Technical Specifications

Optocoupler Transistor Outputs H11G2VM attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED, VDE APPROVED

Minimum Collector-emitter Breakdown Voltage:

80 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

500 %

Nominal Current Transfer Ratio:

1000 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.26 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

H11G2VM Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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