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H11G1SR2M

Onsemi

H11G1SR2M by Onsemi

The Onsemi H11G1SR2M is a single optocoupler with a Darlington output, ideal for applications requiring high isolation voltage of 7500V. It has a max forward current of 0.06A and min operating temperature of -40°C, making it suitable for various surface mount configurations in electronics. With a collector-emitter breakdown voltage of 100V and current transfer ratio of 1000%, this optocoupler offers reliable performance in demanding environments.

Median Price

$0.736

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 450 parts In-Stock

1+ parts

$0.255

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$0.243

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$0.243

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450

$0.255

$0.243

$0.243

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Mouser Electronics

USA . 324 parts In-Stock

1+ parts

$1.030

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$0.523

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$0.417

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$0.314

324

$1.030

$0.523

$0.417

$0.314

DigiKey

USA . 53 parts In-Stock

1+ parts

$1.030

100+ parts

$0.535

1k+ parts

$0.424

10k+ parts

$0.360

53

$1.030

$0.535

$0.424

$0.360

Arrow

USA . 270 parts In-Stock

1+ parts

$1.111

100+ parts

$0.443

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$0.296

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270

$1.111

$0.443

$0.296

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Verical

USA . 270 parts In-Stock

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$0.443

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$0.296

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$0.443

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Chip1Stop

Japan . 147 parts In-Stock

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$0.310

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Distributors (In-Stock)

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Digiode

USA . 2,597 parts In-Stock

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$0.242

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$0.242

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Nova Conductors

Japan . 54 parts In-Stock

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$0.439

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Flip Electronics

USA . 7,000 parts In-Stock

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Vyrian

USA . 1,160 parts In-Stock

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Global Solutions Electronics Company

USA . 753 parts In-Stock

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Bristol Electronics

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Chip Stock

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Distributors (Availability)

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Aztec Data Supply Inc.

USA . 2,251 parts In-Stock

1+ parts

$0.198

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$0.198

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Semicontronic

India . 1,066 parts In-Stock

1+ parts

$0.217

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$0.212

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$0.210

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1,066

$0.217

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$0.210

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Ampacity Inc.

Singapore . 1,057 parts In-Stock

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$0.217

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$0.217

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Corphita

USA . 1,453 parts In-Stock

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$0.230

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$0.230

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Corohmni

South Africa . 158 parts In-Stock

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$0.255

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158

$0.255

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Advanced Electronics

New Zealand . 450 parts In-Stock

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$0.255

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$0.243

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$0.243

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450

$0.255

$0.243

$0.243

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.439

100+ parts

$0.430

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1,000

$0.439

$0.430

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Continental Prestige Electronics

USA . 816 parts In-Stock

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$0.439

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$0.430

816

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$0.430

Argo Parts USA

USA . 176 parts In-Stock

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$0.439

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$0.426

176

$0.439

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$0.426

RC Electronics

USA . 81,214 parts In-Stock

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$0.420

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$0.380

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$0.370

81,214

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$0.370

Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Perfect Parts

USA . 21,055 parts In-Stock

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Lixinc

USA . 16,606 parts In-Stock

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Problanco Electronics

Mexico . 7,452 parts In-Stock

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TANS Electronics

Latvia . 7,391 parts In-Stock

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SupplyDigital Components

Austria . 3,591 parts In-Stock

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GreenTree Electronics

Israel . 3,000 parts In-Stock

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Kulean Microsystems

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Supply Digital

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Kepictronics

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Glotronic Ltd.

UK . 1,800 parts In-Stock

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A-Z Elektronik GmbH

Germany . 1,602 parts In-Stock

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Alle Elektronik GmbH

Germany . 1,068 parts In-Stock

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UHIMA Technologies

Türkiye . 405 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1 parts In-Stock

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Overview

Unlock the potential of your electronic projects with the H11G1SR2M optocoupler transistor output from Onsemi. As a trusted manufacturer in the industry, Onsemi ensures top-notch quality and reliability in all their products. This single configuration optocoupler offers a wide range of applications, from industrial automation to telecommunications. With a high current transfer ratio and excellent isolation voltage, this product provides customers with unmatched value and performance. Take your designs to the next level with the H11G1SR2M and experience the benefits of superior technology firsthand.

Feature Benefit Bullets

Configuration: SINGLE

Single configuration allows for easy installation and operation in various applications.

Maximum Forward Current: 0.06 A

High maximum forward current allows for driving power-hungry loads without any issues.

Optoelectronic Type: DARLINGTON OUTPUT OPTOCOUPLER

Darlington output design provides high current transfer ratio and excellent linearity, making it suitable for precision applications.

Maximum Operating Temperature: 100 °C

Wide operating temperature range ensures reliable performance in harsh environments.

Minimum Operating Temperature: -40 °C

This product can operate in extremely cold temperatures without any problems, making it versatile for different climates.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability for easy installation on circuit boards.

Maximum Power Dissipation: 0.26 W

Efficient power dissipation ensures the optocoupler stays cool during operation, prolonging its lifespan.

Minimum Current Transfer Ratio: 1000 %

High current transfer ratio ensures accurate signal transmission with minimal loss, making it ideal for precision applications.

Maximum Dark Current: 100 nA

Low dark current prevents any unwanted signal interference, ensuring reliable performance.

Minimum Collector-emitter Breakdown Voltage: 100 V

High breakdown voltage ensures protection against voltage spikes and surges, increasing the product's durability.

Nominal Current Transfer Ratio: 1000 %

Consistent current transfer ratio ensures predictable and reliable performance under different operating conditions.

Maximum Isolation Voltage: 7500 V

High isolation voltage provides safety and protection against electrical hazards, making it suitable for high-voltage applications.

Mounting Feature: SURFACE MOUNT

Surface mount design allows for easy installation on circuit boards, saving space and simplifying the assembly process.

Maximum Forward Voltage: 1.5 V

Low forward voltage drop minimizes power loss and ensures efficient operation, making it energy-efficient.

Technical Specifications

Optocoupler Transistor Outputs H11G1SR2M attributes and parameters. Explore more Optocoupler Transistor Outputs devices from Onsemi

Specs

Additional Features:

UL RECOGNIZED

Minimum Collector-emitter Breakdown Voltage:

100 V

Configuration:

SINGLE

Minimum Current Transfer Ratio:

1000 %

Nominal Current Transfer Ratio:

1000 %

Maximum Dark Current:

100 nA

Maximum Forward Current:

.06 A

Maximum Forward Voltage:

1.5 V

Maximum Isolation Voltage:

7500 V

JESD-609 Code:

e3

Mounting Feature:

No. of Elements:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-40 Cel

Optoelectronic Type:

Maximum Power Dissipation:

.26 W

Sub-Category:

Optocoupler - Transistor Outputs

Terminal Finish:

TIN

Trade Compliance

H11G1SR2M Optoelectronics trade compliance attributes, and parameters.

HTS

8541.40.80.00

SB

8541.40.80.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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