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SNJ54HC632JD

Texas Instruments

SNJ54HC632JD by Texas Instruments

SNJ54HC632JD by Texas Instruments is a CMOS digital arithmetic circuit with 52 terminals. It operates in temperatures ranging from -55°C to 125°C, making it suitable for military applications. The package style is rectangular and made of ceramic material, meeting screening levels 38535Q/M, 38534H, and 883B.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,038 parts In-Stock

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5,038

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Digiode

USA . 403 parts In-Stock

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403

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 686 parts In-Stock

1+ parts

$2.333

100+ parts

-

1k+ parts

$2.240

10k+ parts

$2.240

686

$2.333

-

$2.240

$2.240

Parana Technologies

USA . 446 parts In-Stock

1+ parts

$13.767

100+ parts

-

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$14.254

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446

$13.767

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$14.254

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DigiPath Technology Company

USA . 1,221 parts In-Stock

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$15.159

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1,221

$15.159

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IDEA Electronic Components Group

UK . 1,849 parts In-Stock

1+ parts

$15.468

100+ parts

$14.695

1k+ parts

$13.921

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1,849

$15.468

$14.695

$13.921

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ChromeModa Solutions

Germany . 765 parts In-Stock

1+ parts

$15.468

100+ parts

$12.684

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765

$15.468

$12.684

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AZTECH Wire

Italy . 867 parts In-Stock

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$19.603

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867

$19.603

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One Stop Electronics

USA . 160 parts In-Stock

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$50.000

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$50.000

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Corphita

USA . 4,829 parts In-Stock

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Overview

Elevate your digital arithmetic circuits with the SNJ54HC632JD by Texas Instruments. Known for their superior quality and reliability, Texas Instruments brings you a product that ensures top-notch performance in a variety of applications. From military-grade technology to precise terminal positioning, this product offers unmatched value and benefits. Upgrade your electronic projects with the SNJ54HC632JD and experience the advantages of cutting-edge technology at your fingertips.

Feature Benefit Bullets

Package Body Material: CERAMIC

Ceramic packages offer high thermal conductivity and excellent resistance to heat, making them ideal for applications that require reliable operation in high temperature environments.

Screening Level: 38535Q/M; 38534H; 883B

This screening level ensures that the product meets stringent quality standards and is suitable for use in military and aerospace applications where reliability is critical.

No. of Terminals: 52

Having a higher number of terminals allows for more complex arithmetic operations to be performed, providing greater functionality and versatility in digital circuits.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature ensures that the product can withstand elevated temperatures without experiencing performance degradation, making it suitable for harsh operating conditions.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of operating voltages, making it an efficient and versatile choice for digital arithmetic circuits.

Technical Specifications

Digital Arithmetic Circuits SNJ54HC632JD attributes and parameters. Explore more Digital Arithmetic Circuits devices from Texas Instruments

Specs

JESD-30 Code:

R-XDIP-T52

No. of Terminals:

52

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC

Package Code:

DIP

Package Equivalence Code:

DIP52,.6

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Screening Level:

38535Q/M;38534H;883B

Sub-Category:

Arithmetic Circuits

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Trade Compliance

SNJ54HC632JD Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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