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SNJ54HC367J

Texas Instruments

SNJ54HC367J by Texas Instruments

SNJ54HC367J by Texas Instruments is a CMOS bus driver with 2 functions, 4 bits, and 3-STATE output characteristics. It has a propagation delay of 29 ns at nominal voltage of 5V, making it ideal for military applications requiring fast signal transmission in harsh environments. With MIL-PRF-38535 screening level and dual terminal position, this rectangular package driver operates b/w -55 to 125 °C temperatures.

Median Price

$9.812

Lifecycle Status

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Arrow

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Chip1Stop

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Bristol Electronics

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Vyrian

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Andel Nordic

Denmark . 4,694 parts In-Stock

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Parana Technologies

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DigiPath Technology Company

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Microchip USA

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Overview

Elevate your electronic projects with the SNJ54HC367J by Texas Instruments. Crafted with precision and reliability, this bus driver/transceiver offers seamless integration and high performance. Perfect for military-grade applications, this product features a true output polarity and 3-state output characteristics. With a nominal supply voltage of 5V and a maximum seated height of 5.08mm, the SNJ54HC367J provides unmatched value and efficiency. Trust in Texas Instruments to deliver top-notch quality and innovation for all your electronics needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the internal components, making the product reliable for long-term use.

Propagation Delay At Nominal Supply: 29 ns

Low propagation delay ensures quick signal transmission and response, making the product efficient for high-speed communication.

No. of Functions: 2

Having multiple functions in one device saves space and simplifies circuit design, making the product versatile and cost-effective.

Nominal Supply Voltage / Vsup (V): 5

Operating at a common supply voltage simplifies power management and compatibility with other components in the system.

Output Characteristics: 3-STATE

3-state outputs allow for high impedance, enabling multiple drivers to share a common bus without causing conflicts, enhancing flexibility in circuit design.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Bus Driver & Transceivers SNJ54HC367J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

ONE FUNCTION WITH TWO BITS

Control Type:

ENABLE LOW

Count Direction:

UNIDIRECTIONAL

Family:

HC/UH

JESD-30 Code:

R-GDIP-T16

JESD-609 Code:

e0

Length:

19.56 mm

Load Capacitance (CL):

150 pF

Logic IC Type:

Maximum I (ol):

6 Amp

No. of Bits:

4

No. of Functions:

2

No. of Ports:

2

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP16,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

2/6

Maximum Power Supply Current (ICC):

.08 mA

Propagation Delay At Nominal Supply:

29 ns

Propagation Delay (tpd):

180 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

7.62 mm

Trade Compliance

SNJ54HC367J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-297-6062, 5962012976062

NIIN

012976062

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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