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SNJ54BCT8374AJT

Texas Instruments

SNJ54BCT8374AJT by Texas Instruments

SNJ54BCT8374AJT by Texas Instruments is an 8-bit bus driver with a propagation delay of 10ns at 5V. It features a MIL-PRF-38535 screening level and operates in military-grade temperatures from -55 to 125°C. Ideal for applications requiring true output polarity, such as military communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 8,819 parts In-Stock

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Digiode

USA . 2,896 parts In-Stock

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Electronic Expediters

USA . 36 parts In-Stock

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Resion

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Electronics Depot

USA . 6 parts In-Stock

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Andel Nordic

Denmark . 5,084 parts In-Stock

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$5.773

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$5.542

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One Stop Electronics

USA . 711 parts In-Stock

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AZTECH Wire

Italy . 434 parts In-Stock

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Parana Technologies

USA . 1 parts In-Stock

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IDEA Electronic Components Group

UK . 1,481 parts In-Stock

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$32.854

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$31.211

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$29.569

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ChromeModa Solutions

Germany . 1,258 parts In-Stock

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Microchip USA

USA . 12,241 parts In-Stock

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Corphita

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DigiPath Technology Company

USA . 1,292 parts In-Stock

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Overview

Elevate your electronic designs with the SNJ54BCT8374AJT from Texas Instruments, a top-of-the-line Bus Driver & Transceiver that delivers unparalleled quality and reliability. With a MIL-PRF-38535 screening level, this ceramic, glass-sealed package ensures optimal performance in demanding environments. Perfect for applications requiring precise signal transmission, this 8-bit transceiver offers a fast propagation delay of just 10 ns, making it an essential component for any high-speed digital system. Trust Texas Instruments to provide cutting-edge technology that enhances your projects with efficiency and precision.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

This material provides durability and protection for the internal components of the bus driver, ensuring long-term reliability.

Propagation Delay At Nominal Supply: 10 ns

Low propagation delay ensures quick response and efficient data transmission within the circuit.

No. of Bits: 8

The 8-bit design allows for a wide range of data processing capabilities, making it suitable for various applications.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard 5V supply voltage makes it compatible with most systems and easy to integrate.

Temperature Grade: MILITARY

The military-grade temperature rating ensures reliable performance in harsh environmental conditions, making it ideal for rugged applications.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT8374AJT attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

SUPPORTS IEEE STANDARD 1149.1-1990 BOUNDARY SCAN

Control Type:

INDEPENDENT CONTROL

Count Direction:

UNIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T24

JESD-609 Code:

e0

Length:

32.005 mm

Logic IC Type:

Maximum Frequency At Nominal Supply:

70000000 Hz

Maximum I (ol):

64 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

24

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP24,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

52 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

10 ns

Qualification:

Not Qualified

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

FF/Latches

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Translation:

N/A

Trigger Type:

POSITIVE EDGE

Width:

7.62 mm

Trade Compliance

SNJ54BCT8374AJT Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-503-4598, 5962015034598

NIIN

015034598

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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