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SNJ54BCT245J

Texas Instruments

SNJ54BCT245J by Texas Instruments

SNJ54BCT245J by Texas Instruments is an 8-bit bus driver with a propagation delay of 7.6 ns, operating at a supply voltage of 5V. It features MIL-PRF-38535 screening and offers 3-STATE output characteristics. Ideal for bidirectional control applications in military-grade environments due to its BICMOS technology and MILITARY temperature grade.

Median Price

$40.624

Lifecycle Status

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1k+

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Rochester

USA . 178 parts In-Stock

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$36.110

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$32.310

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$30.410

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DigiKey

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Verical

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$45.138

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$40.388

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$38.013

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Distributors (In-Stock)

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Digiode

USA . 265 parts In-Stock

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Vyrian

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DigiKey Marketplace

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Electronics Depot

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Beltway Electronics Company

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Bristol Electronics

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Martec Srl

Italy . 24 parts In-Stock

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Zilex Electronics Inc.

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Manoshevitz Elec. Sales

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Mil-Aero Solutions, Inc.

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Microfarads

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Sogenti Electronics

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Andel Nordic

Denmark . 285 parts In-Stock

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$2.777

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$2.666

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$2.666

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$2.666

Parana Technologies

USA . 2,367 parts In-Stock

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$11.394

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$11.816

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ChromeModa Solutions

Germany . 3,712 parts In-Stock

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IDEA Electronic Components Group

UK . 639 parts In-Stock

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Component Stockers USA

USA . 211 parts In-Stock

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Corphita

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DigiPath Technology Company

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Overview

Elevate your electronics projects with the SNJ54BCT245J by Texas Instruments, a high-quality bus driver and transceiver designed to exceed your expectations. With a MIL-PRF-38535 screening level, this rectangular package boasts a true output polarity and 3-STATE characteristics, making it ideal for a wide range of applications. Experience the reliability and precision of Texas Instruments technology, delivering exceptional performance and durability. Upgrade your designs with the SNJ54BCT245J and unlock endless possibilities in your projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed package body material ensures durability and reliability in various environmental conditions, making this product a suitable choice for long-term use.

Propagation Delay At Nominal Supply: 7 ns

The low propagation delay helps in fast signal transmission and processing, making this product ideal for applications requiring quick response times.

Screening Level: MIL-PRF-38535

The MIL-PRF-38535 screening level ensures that the product meets stringent military standards for quality and reliability, making it a reliable choice for military and aerospace applications.

Nominal Supply Voltage / Vsup (V): 5

The compatible 5V nominal supply voltage makes this product easy to integrate into existing systems without requiring additional power modifications.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature tolerance of 125°C ensures the product can withstand elevated temperatures, making it suitable for industrial and automotive applications.

Technical Specifications

Bus Driver & Transceivers SNJ54BCT245J attributes and parameters. Explore more Bus Driver & Transceivers devices from Texas Instruments

Specs

Additional Features:

WITH DIRECTION CONTROL; IOL = 20MA @ VOL = 0.5V & IOH = 3MA @ VOH = 2.4V FOR PORT A

Control Type:

COMMON CONTROL

Count Direction:

BIDIRECTIONAL

Family:

BCT/FBT

JESD-30 Code:

R-GDIP-T20

JESD-609 Code:

e0

Length:

24.195 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

48 Amp

No. of Bits:

8

No. of Functions:

1

No. of Ports:

2

No. of Terminals:

20

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

TRUE

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

TUBE

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

90 mA

Propagation Delay At Nominal Supply:

7 ns

Propagation Delay (tpd):

7.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

MIL-PRF-38535

Maximum Seated Height:

5.08 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Translation:

N/A

Width:

7.62 mm

Trade Compliance

SNJ54BCT245J Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-366-0232, 5962013660232, 5962-21-910-5564, 5962219105564, 5962-01-422-8077, 5962014228077

NIIN

013660232, 219105564, 014228077

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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