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SN74LVC3G04DCURE4

Texas Instruments

SN74LVC3G04DCURE4 by Texas Instruments

SN74LVC3G04DCURE4 by Texas Instruments is a logic gate with 3 functions, 4.1 ns propagation delay, and 7.9 ns propagation delay. It operates at a supply voltage of 1.8V to 5.5V and has a temperature range of -40°C to 85°C. Ideal for industrial applications requiring fast signal processing in compact designs.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Vyrian

USA . 5,232 parts In-Stock

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Bristol Electronics

USA . 1,801 parts In-Stock

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Atlantic Semiconductor

USA . 1,801 parts In-Stock

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Digiode

USA . 1,799 parts In-Stock

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Nova Conductors

Japan . 52 parts In-Stock

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AZTECH Wire

Italy . 327 parts In-Stock

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$10.832

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Corohmni

South Africa . 4 parts In-Stock

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Parana Technologies

USA . 79 parts In-Stock

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$18.734

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ChromeModa Solutions

Germany . 1,335 parts In-Stock

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IDEA Electronic Components Group

UK . 646 parts In-Stock

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$19.895

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$18.848

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One Stop Electronics

USA . 740 parts In-Stock

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Ampacity Inc.

Singapore . 963 parts In-Stock

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Corphita

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Continental Prestige Electronics

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Argo Parts USA

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DigiPath Technology Company

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Bastille Electronics

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Microchip USA

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Overview

Upgrade your electronics with the SN74LVC3G04DCURE4 by Texas Instruments, a top-quality logic gate that offers exceptional performance and reliability. With a wide range of applications in various industries, this product boasts a fast propagation delay, low power consumption, and 3-state output characteristics. Trust in Texas Instruments' reputation for excellence and innovation to deliver cutting-edge technology that meets your needs. Experience the value and benefits of this compact and efficient component, providing seamless integration and enhanced functionality for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for the product

Propagation Delay At Nominal Supply: 4.1 ns

Low propagation delay ensures fast and efficient operation

Surface Mount: YES

Surface mount capability makes it easy to integrate into circuit designs

No. of Functions: 3

Having multiple functions in one component can save space and simplify circuit designs

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement on circuit boards

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption

Load Capacitance (CL): 50 pF

Suitable load capacitance for efficient operation

Power Supplies (V): 3.3

Compatible with common power supply voltages

No. of Terminals: 8

Sufficient terminals for connections in a circuit

Maximum I (ol): 24 Amp

High output current capability for driving loads

Propagation Delay (tpd): 7.9 ns

Acceptable propagation delay for most applications

Maximum Operating Temperature: 85 °C

Wide operating temperature range suitable for various environments

Output Characteristics: 3-STATE

3-state output for added flexibility in controlling signals

Minimum Operating Temperature: -40 °C

Suitable for operation in cold environments

Terminal Finish: NICKEL PALLADIUM GOLD

Terminal finish provides good conductivity and corrosion resistance

Terminal Position: DUAL

Dual terminal position for easy soldering and connection

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance for reliable operation in harsh conditions

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity

Technical Specifications

Logic Gates SN74LVC3G04DCURE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

3

No. of Inputs:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

4.1 ns

Propagation Delay (tpd):

7.9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74LVC3G04DCURE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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