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SN74LVC1G00DBVTE4

Texas Instruments

SN74LVC1G00DBVTE4 by Texas Instruments

SN74LVC1G00DBVTE4 by Texas Instruments is a CMOS Logic Gate with 2 inputs, 4.7 ns propagation delay, and 3.3 V nominal voltage. It is used in automotive applications due to its low profile design, small outline package style, and dual terminal position for efficient performance in tight spaces.

Median Price

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Lifecycle Status

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3

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1k+

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Digiode

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Vyrian

USA . 1,156 parts In-Stock

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Nova Conductors

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AZTECH Wire

Italy . 720 parts In-Stock

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$7.941

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Corohmni

South Africa . 521 parts In-Stock

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$8.183

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Parana Technologies

USA . 1,112 parts In-Stock

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ChromeModa Solutions

Germany . 2,382 parts In-Stock

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$8.399

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IDEA Electronic Components Group

UK . 2,092 parts In-Stock

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$10.243

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$9.731

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$9.219

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Semicontronic

India . 1,140 parts In-Stock

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Ampacity Inc.

Singapore . 1,310 parts In-Stock

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One Stop Electronics

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Continental Prestige Electronics

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Microchip USA

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DigiPath Technology Company

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Overview

Enhance your electronic projects with the high-quality SN74LVC1G00DBVTE4 logic gate from Texas Instruments. Designed to meet the rigorous standards of the automotive industry, this small outline, low-profile package offers fast propagation delay and low power consumption, making it ideal for a wide range of applications. With nickel/palladium/gold terminal finish and dual terminal position, this logic gate ensures reliable performance in any environment. Trust Texas Instruments for superior technology and innovation that brings value and efficiency to your designs. Elevate your projects with the SN74LVC1G00DBVTE4 and experience the difference that quality and reliability can make.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and reliability for the package, ensuring the logic gate is protected from external elements.

Propagation Delay At Nominal Supply: 4.7 ns

Low propagation delay results in faster signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and cost during production.

Nominal Supply Voltage / Vsup (V): 3.3

Operates at a common nominal supply voltage of 3.3V, making it compatible with a wide range of electronic systems.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliability in harsh environmental conditions, suitable for automotive and industrial applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gate energy-efficient and reliable.

Technical Specifications

Logic Gates SN74LVC1G00DBVTE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

4.7 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.45 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.6 mm

Trade Compliance

SN74LVC1G00DBVTE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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