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SN74LVC08APWE4

Texas Instruments

SN74LVC08APWE4 by Texas Instruments

SN74LVC08APWE4 by Texas Instruments is a logic gate with 4 functions and 2 inputs. It has a propagation delay of 5.5 ns at 1.8V, suitable for automotive applications due to its temperature grade of -40 to 125 °C and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,929 parts In-Stock

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Digiode

USA . 3,823 parts In-Stock

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Nova Conductors

Japan . 28 parts In-Stock

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AZTECH Wire

Italy . 428 parts In-Stock

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$7.925

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One Stop Electronics

USA . 1,584 parts In-Stock

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$10.000

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Parana Technologies

USA . 310 parts In-Stock

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$12.169

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DigiPath Technology Company

USA . 2,275 parts In-Stock

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$13.400

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ChromeModa Solutions

Germany . 1,486 parts In-Stock

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$13.673

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$11.212

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IDEA Electronic Components Group

UK . 56 parts In-Stock

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$13.673

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$12.989

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$12.306

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Corohmni

South Africa . 81 parts In-Stock

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$15.358

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Ampacity Inc.

Singapore . 1,067 parts In-Stock

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Semicontronic

India . 188 parts In-Stock

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Corphita

USA . 4,322 parts In-Stock

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Continental Prestige Electronics

USA . 1,914 parts In-Stock

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Argo Parts USA

USA . 1,625 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Microchip USA

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Overview

Elevate your projects with the SN74LVC08APWE4 by Texas Instruments, a top-quality logic gate designed to deliver exceptional performance. Known for their innovative technology and reliable products, Texas Instruments ensures that every component meets the highest standards. Ideal for a wide range of applications, this logic gate offers fast propagation delay and low power consumption, making it a valuable asset for any project. Experience the benefits of precision engineering and superior functionality with the SN74LVC08APWE4, setting you up for success in all your endeavors.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides durability and protection for the internal components of the logic gates, making them suitable for various environments and applications.

Propagation Delay At Nominal Supply: 5.5 ns

The low propagation delay at a nominal supply voltage of 1.8V ensures fast signal processing and high performance in applications where timing is critical.

No. of Functions: 4

Having multiple functions within a single logic gate allows for more complex operations to be performed efficiently, reducing the need for additional components.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V is efficient in terms of power consumption and makes the logic gates suitable for battery-operated devices or low-power applications.

Temperature Grade: AUTOMOTIVE

The automotive temperature grade ensures that these logic gates can withstand the temperature fluctuations and harsh conditions typically found in automotive applications, ensuring reliability and longevity.

Technology: CMOS

The CMOS technology used in these logic gates provides low power consumption, high noise immunity, and compatibility with a wide range of operating voltages, making them versatile and energy-efficient.

Technical Specifications

Logic Gates SN74LVC08APWE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TUBE

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

5.5 ns

Propagation Delay (tpd):

11.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

SN74LVC08APWE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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