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SN74LVC07ADRE4

Texas Instruments

SN74LVC07ADRE4 by Texas Instruments

SN74LVC07ADRE4 by Texas Instruments is a logic gate with 6 functions, 3.6 ns propagation delay, and open-drain output. It operates at a supply voltage of 1.8V to 5.5V, making it suitable for automotive applications requiring fast signal processing in compact designs. This small outline package with dual terminals is ideal for surface mount assembly in high-temperature environments up to 125°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Chip Stock

USA . 36,690 parts In-Stock

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Vyrian

USA . 4,547 parts In-Stock

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Digiode

USA . 1,908 parts In-Stock

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Nova Conductors

Japan . 95 parts In-Stock

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AZTECH Wire

Italy . 542 parts In-Stock

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$16.726

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542

$16.726

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Corohmni

South Africa . 396 parts In-Stock

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$24.792

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Parana Technologies

USA . 488 parts In-Stock

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$28.039

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$43.045

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$28.039

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DigiPath Technology Company

USA . 581 parts In-Stock

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$30.874

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$28.404

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$30.874

$28.404

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ChromeModa Solutions

Germany . 6,282 parts In-Stock

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$31.504

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$25.833

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IDEA Electronic Components Group

UK . 730 parts In-Stock

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$31.504

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$29.929

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$28.354

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730

$31.504

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One Stop Electronics

USA . 1,196 parts In-Stock

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$37.000

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Ampacity Inc.

Singapore . 1,362 parts In-Stock

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Semicontronic

India . 1,167 parts In-Stock

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Continental Prestige Electronics

USA . 6,616 parts In-Stock

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Corphita

USA . 1,521 parts In-Stock

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Argo Parts USA

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Bastille Electronics

Australia . 600 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic designs with the SN74LVC07ADRE4 by Texas Instruments. Known for its superior quality and reliability, Texas Instruments is a trusted manufacturer in the industry. This logic gate offers fast propagation delay, low power consumption, and wide operating temperature range, making it ideal for automotive applications and beyond. Say goodbye to signal integrity issues with this open-drain output device. Experience the value and performance that only Texas Instruments can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC material ensures durability and resistance to external elements, making it suitable for various environments.

Propagation Delay At Nominal Supply: 3.6 ns

Fast propagation delay ensures quick signal processing, making it efficient for high-speed applications.

Surface Mount: YES

Surface mount feature allows for easy and convenient PCB assembly, saving time and effort during production.

Nominal Supply Voltage / Vsup (V): 1.8

Low nominal supply voltage helps in reducing power consumption and heat dissipation, making it energy-efficient.

Temperature Grade: AUTOMOTIVE

Automotive-grade temperature rating ensures reliability and performance in challenging temperature conditions, making it suitable for automotive applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, making it an ideal choice for diverse digital applications.

Technical Specifications

Logic Gates SN74LVC07ADRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

3.6 ns

Propagation Delay (tpd):

5.6 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

SN74LVC07ADRE4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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