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SN74LV05ADBR

Texas Instruments

SN74LV05ADBR by Texas Instruments

SN74LV05ADBR by Texas Instruments is a logic gate with 6 functions, 12 ns propagation delay, and 19.5 ns tpd. It operates at a voltage range of 2V to 5.5V and is ideal for industrial applications requiring open-drain output characteristics in a small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,140 parts In-Stock

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Vyrian

USA . 2,477 parts In-Stock

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Connector Distribution Corp

USA . 234 parts In-Stock

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Right Parts Inc.

USA . 234 parts In-Stock

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234

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AZTECH Wire

Italy . 523 parts In-Stock

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$19.458

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523

$19.458

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Parana Technologies

USA . 2,130 parts In-Stock

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$25.232

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$25.866

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DigiPath Technology Company

USA . 2,360 parts In-Stock

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$27.783

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$27.783

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ChromeModa Solutions

Germany . 4,719 parts In-Stock

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$28.350

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$23.247

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$28.350

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IDEA Electronic Components Group

UK . 1,690 parts In-Stock

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$28.350

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$26.932

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$25.515

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One Stop Electronics

USA . 948 parts In-Stock

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$58.000

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$58.000

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QUARKTWIN TECHNOLOGY LTD

USA . 16,081 parts In-Stock

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Corphita

USA . 4,318 parts In-Stock

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Microchip USA

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Overview

Elevate your electronic projects with the SN74LV05ADBR by Texas Instruments, a top-quality logic gate that offers unmatched reliability and performance. Manufactured by a trusted industry leader in semiconductor technology, this versatile component is perfect for a wide range of applications. With fast propagation delays and open-drain output characteristics, this product ensures efficient operation and precise signal processing. Experience the value and benefits of this exceptional logic gate, from its compact design to its industrial-grade temperature tolerance. Trust Texas Instruments for all your semiconductor needs and take your projects to the next level with the SN74LV05ADBR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the internal components of the logic gates, making them suitable for various environments and applications.

Propagation Delay At Nominal Supply: 12 ns

Low propagation delay ensures fast signal processing and high-speed operation of the logic gates, making them efficient for time-sensitive applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and simplifying the assembly process.

Nominal Supply Voltage / Vsup (V): 2.5

Operates at a low nominal supply voltage, consuming less power and making them energy-efficient.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for easy interfacing with other components, providing flexibility and compatibility in circuit designs.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of operating voltages, making the logic gates versatile and efficient.

Technical Specifications

Logic Gates SN74LV05ADBR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

LV/LV-A/LVX/H

JESD-30 Code:

R-PDSO-G14

Length:

6.2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SSOP14,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3.3

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

19.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

2.5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5.3 mm

Trade Compliance

SN74LV05ADBR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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