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SN74AUC2G32DCURG4

Texas Instruments

SN74AUC2G32DCURG4 by Texas Instruments

SN74AUC2G32DCURG4 by Texas Instruments is a logic gate with 2 functions and inputs, offering a propagation delay of 3.3 ns at 1.2V supply voltage. It features a small outline package style for surface mount applications, suitable for industrial temperature grades with a wide operating range from -40 to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,876 parts In-Stock

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2,876

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Digiode

USA . 725 parts In-Stock

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725

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Distributors (Availability)

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AZTECH Wire

Italy . 205 parts In-Stock

1+ parts

$12.493

100+ parts

-

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205

$12.493

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Parana Technologies

USA . 1,724 parts In-Stock

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$25.129

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$25.795

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1,724

$25.129

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$25.795

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DigiPath Technology Company

USA . 245 parts In-Stock

1+ parts

$27.670

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245

$27.670

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ChromeModa Solutions

Germany . 1,951 parts In-Stock

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$28.235

100+ parts

$23.153

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1,951

$28.235

$23.153

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IDEA Electronic Components Group

UK . 390 parts In-Stock

1+ parts

$28.235

100+ parts

$26.823

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$25.412

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390

$28.235

$26.823

$25.412

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One Stop Electronics

USA . 1,418 parts In-Stock

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$62.000

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1,418

$62.000

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Corphita

USA . 2,967 parts In-Stock

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Microchip USA

USA . 2,781 parts In-Stock

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Overview

Enhance your electronics projects with the SN74AUC2G32DCURG4 by Texas Instruments, a top-tier manufacturer known for its high-quality logic gates. This versatile component offers swift propagation delay and three-state output characteristics, making it ideal for a wide range of applications. From small outline to very thin profile, this product boasts a compact package style that ensures seamless integration. With a nominal supply voltage of 1.2V and peak reflow temperature of 260°C, the SN74AUC2G32DCURG4 delivers unmatched reliability and performance. Upgrade your designs today with this exceptional logic gate from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 3.3 ns

With a fast propagation delay, these logic gates can quickly process signals and improve overall performance in a circuit.

Surface Mount: YES

The surface mount capability makes installation and integration of these logic gates easier and more efficient in electronic devices.

Nominal Supply Voltage / Vsup (V): 1.2

Operating at a low supply voltage of 1.2V allows for energy efficiency and reduces power consumption in electronic systems.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature, these logic gates can withstand harsh environmental conditions and maintain functionality.

Technology: CMOS

Being based on CMOS technology ensures low power consumption, high noise immunity, and compatibility with a wide range of electronic devices.

Technical Specifications

Logic Gates SN74AUC2G32DCURG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AUC

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

2.3 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

5 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

1.2/2.5

Propagation Delay At Nominal Supply:

3.3 ns

Propagation Delay (tpd):

3.3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

2.7 V

Minimum Supply Voltage (Vsup):

.8 V

Nominal Supply Voltage / Vsup (V):

1.2

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN74AUC2G32DCURG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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