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SN74ALVC04RGYRG4

Texas Instruments

SN74ALVC04RGYRG4 by Texas Instruments

SN74ALVC04RGYRG4 by Texas Instruments is a CMOS logic gate with 6 functions, 2.8 ns propagation delay, and 1.8V nominal voltage. Ideal for industrial applications requiring fast signal processing in compact spaces due to its small size and low power consumption.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,480 parts In-Stock

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Vyrian

USA . 4,371 parts In-Stock

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AZTECH Wire

Italy . 806 parts In-Stock

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$13.608

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$13.608

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Parana Technologies

USA . 9 parts In-Stock

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$14.344

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$1,332.070

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$12.910

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9

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DigiPath Technology Company

USA . 1,947 parts In-Stock

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$15.795

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ChromeModa Solutions

Germany . 3,025 parts In-Stock

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$16.117

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$13.216

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$16.117

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IDEA Electronic Components Group

UK . 856 parts In-Stock

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$16.117

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$15.311

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$14.505

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856

$16.117

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One Stop Electronics

USA . 1,047 parts In-Stock

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$50.000

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QUARKTWIN TECHNOLOGY LTD

USA . 20,961 parts In-Stock

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Microchip USA

USA . 3,812 parts In-Stock

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Corphita

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Overview

Elevate your electronic projects with the SN74ALVC04RGYRG4 by Texas Instruments. Known for their top-notch quality, Texas Instruments delivers cutting-edge logic gates that are essential for various applications. This chip carrier, heat sink/slug, very thin profile package offers a fast propagation delay, low power supply current, and a wide temperature range, making it perfect for industrial use. With a nominal supply voltage of 1.8V and a maximum supply voltage of 3.6V, this logic gate provides reliability and efficiency that customers can trust. Upgrade your designs today with the SN74ALVC04RGYRG4 from Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is widely used in electronics packaging due to its durability and low cost, making the product reliable and cost-effective.

Propagation Delay At Nominal Supply: 2.8 ns

The low propagation delay ensures fast signal processing, making the product suitable for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy and efficient assembly onto circuit boards, saving time and space.

Nominal Supply Voltage / Vsup (V): 1.8

Operating at a low supply voltage reduces power consumption and heat dissipation, making the product energy-efficient.

Maximum Operating Temperature: 85 °C

The product can withstand high temperatures, ensuring reliable operation in various environmental conditions.

Technology: CMOS

Complementary Metal-Oxide-Semiconductor technology offers low power consumption and high noise immunity, enhancing the product's performance and reliability.

Moisture Sensitivity Level (MSL): 2

MSL 2 indicates that the product can withstand multiple reflow soldering processes, making it suitable for mass production.

Technical Specifications

Logic Gates SN74ALVC04RGYRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ALVC/VCX/A

JESD-30 Code:

S-PQCC-N14

JESD-609 Code:

e4

Length:

3.5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

2

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LCC14/18,.14SQ,20

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

2.8 ns

Propagation Delay (tpd):

3 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.5 mm

Trade Compliance

SN74ALVC04RGYRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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