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SN74AHCT32QPWR

Texas Instruments

SN74AHCT32QPWR by Texas Instruments

SN74AHCT32QPWR by Texas Instruments is a CMOS logic gate with 4 functions and 2 inputs. It has a propagation delay of 9 ns at 5V, making it suitable for automotive applications. This surface-mount device comes in a small outline package with dual terminals and operates b/w -40 to 125°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 8,540 parts In-Stock

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Digiode

USA . 294 parts In-Stock

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294

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AZTECH Wire

Italy . 570 parts In-Stock

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$7.770

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570

$7.770

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Parana Technologies

USA . 353 parts In-Stock

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$15.332

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$15.726

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353

$15.332

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DigiPath Technology Company

USA . 225 parts In-Stock

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$16.882

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$15.532

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$16.882

$15.532

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ChromeModa Solutions

Germany . 6,598 parts In-Stock

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$17.227

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$14.126

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$17.227

$14.126

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IDEA Electronic Components Group

UK . 2,104 parts In-Stock

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$17.227

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$16.366

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$15.504

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$17.227

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$15.504

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One Stop Electronics

USA . 486 parts In-Stock

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$22.000

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Corphita

USA . 1,530 parts In-Stock

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Microchip USA

USA . 372 parts In-Stock

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Overview

Unlock the power of seamless logic with the Texas Instruments SN74AHCT32QPWR. Crafted with precision and expertise, this logic gate promises unparalleled performance in a compact package. Perfect for a wide range of applications, from automotive systems to consumer electronics, this product is designed to deliver fast propagation delay and reliable operation. Experience the unmatched quality and reliability that Texas Instruments is known for, and elevate your projects with the SN74AHCT32QPWR.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Propagation Delay At Nominal Supply: 9 ns

Low propagation delay ensures quick response and efficient operation of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy integration onto circuit boards, saving space and enhancing overall design flexibility.

No. of Functions: 4

With four functions in one package, it offers versatility and efficiency in circuit design and functionality.

No. of Inputs: 2

Having two inputs allows for basic logic operations, making it suitable for simple to moderately complex circuits.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V ensures compatibility with standard power sources.

Load Capacitance (CL): 50 pF

The specified load capacitance helps in determining the maximum loading that the logic gates can drive effectively.

Power Supplies (V): 5

The specified power supply voltage enables reliable and stable operation of the logic gates.

No. of Terminals: 14

Having multiple terminals allows for connectivity to other components and peripherals in a circuit.

Maximum I (ol): 8 Amp

With a maximum output current rating of 8A, the logic gates can drive higher loads without overheating or damage.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature makes the logic gates suitable for use in various environmental conditions.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in cold environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable.

Technical Specifications

Logic Gates SN74AHCT32QPWR attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHCT/VHCT/VT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

5 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

9 ns

Propagation Delay (tpd):

9 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

SN74AHCT32QPWR Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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