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SN74AHC1G08DRLRG4

Texas Instruments

SN74AHC1G08DRLRG4 by Texas Instruments

SN74AHC1G08DRLRG4 by Texas Instruments is a CMOS logic gate with 2 inputs, 14 ns propagation delay, and 3-STATE output. It operates at temperatures from -55 to 125 °C and has a supply voltage range of 2-5.5 V. Ideal for applications requiring fast signal processing in compact designs.

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1k+

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Vyrian

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Component Stockers USA

USA . 25,862 parts In-Stock

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AZTECH Wire

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Corohmni

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Parana Technologies

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DigiPath Technology Company

USA . 2,276 parts In-Stock

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$26.820

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ChromeModa Solutions

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IDEA Electronic Components Group

UK . 1,043 parts In-Stock

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One Stop Electronics

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Overview

Experience the superior quality and reliability of Texas Instruments with the SN74AHC1G08DRLRG4 logic gate. Designed for optimal performance, this product is ideal for a wide range of applications in various industries. With its advanced technology and innovative features, it offers customers unmatched value, efficiency, and precision. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations. Elevate your projects with the SN74AHC1G08DRLRG4 and unlock endless possibilities.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable.

Propagation Delay At Nominal Supply: 14.5 ns

With a fast propagation delay, this logic gate ensures quick response times in circuit operations.

Surface Mount: YES

Being surface mountable, this logic gate is easy to install and saves space on the circuit board.

No. of Inputs: 2

With two inputs, this logic gate can perform a variety of logical functions efficiently.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for easy placement and integration into circuit designs.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at 3.3V, this logic gate is compatible with a wide range of electronic devices.

Load Capacitance (CL): 50 pF

The load capacitance of 50pF ensures stable and reliable performance in different circuit configurations.

Power Supplies (V): 2/5.5

Supporting a range of power supplies from 2V to 5.5V, this logic gate is versatile and adaptable.

No. of Terminals: 5

With five terminals, this logic gate offers flexibility in connecting to other components in the circuit.

Package Style (Meter): SMALL OUTLINE, VERY THIN PROFILE

The small outline and thin profile make this logic gate suitable for compact electronic designs.

Maximum I (ol): 8 Amp

With a maximum output current of 8A, this logic gate can drive high-power components effectively.

Propagation Delay (tpd): 14 ns

The low propagation delay of 14ns ensures efficient signal processing in electronic circuits.

Maximum Operating Temperature: 125 °C

Operating at temperatures up to 125°C, this logic gate is suitable for a wide range of applications.

Output Characteristics: 3-STATE

The 3-state output feature allows this logic gate to be used in bus-oriented systems for added flexibility.

Minimum Operating Temperature: -55 °C

Able to operate in temperatures as low as -55°C, this logic gate is reliable in harsh environments.

Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

The terminal finish of nickel, palladium, gold, and silver provides excellent conductivity and corrosion resistance.

Terminal Position: DUAL

With dual terminal positions, this logic gate offers multiple mounting options for increased design flexibility.

Maximum Seated Height: 0.6 mm

The low seated height of 0.6mm allows for a compact layout of components on the circuit board.

Width: 1.2 mm

With a width of 1.2mm, this logic gate is space-efficient and ideal for densely packed circuit layouts.

Minimum Supply Voltage (Vsup): 2 V

Operating at a minimum supply voltage of 2V ensures compatibility with a wide range of electronic systems.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for reliable soldering during assembly.

Length: 1.6 mm

With a length of 1.6mm, this logic gate is compact and suitable for miniaturized electronic devices.

Temperature Grade: MILITARY

Designed to military-grade standards, this logic gate offers high reliability and performance in demanding environments.

Schmitt Trigger: YES

The inclusion of a Schmitt trigger ensures noise immunity and stable operation in digital circuits.

Technology: CMOS

Built using CMOS technology, this logic gate offers low power consumption and high noise immunity.

Terminal Form: FLAT

The flat terminal form makes this logic gate easy to solder and ensures secure connections in the circuit.

Packing Method: TR, 7 INCH

Packed in tape and reel format, this logic gate is ready for automated assembly processes.

Terminal Pitch: 0.5 mm

With a terminal pitch of 0.5mm, this logic gate is suitable for fine-pitch mounting applications.

Maximum Supply Voltage (Vsup): 5.5 V

Operating at a maximum supply voltage of 5.5V, this logic gate offers a wide voltage range for various applications.

Maximum Power Supply Current (ICC): 0.01 mA

Consuming only 0.01mA of power, this logic gate is energy-efficient and suitable for battery-operated devices.

Technical Specifications

Logic Gates SN74AHC1G08DRLRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e4

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR, 7 INCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

14.5 ns

Propagation Delay (tpd):

14 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.2 mm

Trade Compliance

SN74AHC1G08DRLRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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