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SN74AHC1G04DCKTG4

Texas Instruments

SN74AHC1G04DCKTG4 by Texas Instruments

SN74AHC1G04DCKTG4 by Texas Instruments is a logic gate with 8.5ns propagation delay, 3.3V nominal voltage, and 50pF load capacitance. It is used in automotive applications due to its CMOS technology, small outline package style, and dual terminal position.

Median Price

$0.391

Lifecycle Status

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8

In-Stock Inventory

1k+

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Chip1Stop

Japan . 250 parts In-Stock

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$0.391

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Nova Conductors

Japan . 500 parts In-Stock

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$0.281

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Chip Stock

USA . 281,850 parts In-Stock

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Vyrian

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Digiode

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Bristol Electronics

USA . 874 parts In-Stock

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Euro-Tech

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Sensible Micro Corp

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Continental Prestige Electronics

USA . 6,345 parts In-Stock

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$0.281

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$0.275

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Argo Parts USA

USA . 2,196 parts In-Stock

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$0.281

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$0.273

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Netroflash

USA . 100 parts In-Stock

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$0.281

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Ampacity Inc.

Singapore . 163 parts In-Stock

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$0.332

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Semicontronic

India . 26 parts In-Stock

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AZTECH Wire

Italy . 275 parts In-Stock

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$15.875

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Parana Technologies

USA . 177 parts In-Stock

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$25.999

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$26.588

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DigiPath Technology Company

USA . 600 parts In-Stock

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$28.628

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ChromeModa Solutions

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IDEA Electronic Components Group

UK . 298 parts In-Stock

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$27.751

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Corphita

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Microchip USA

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Overview

Enhance the efficiency of your electronic projects with the SN74AHC1G04DCKTG4 logic gate by Texas Instruments. Known for their top-notch quality and reliability, Texas Instruments brings you a versatile component that is perfect for various applications in the field of electronics. This logic gate offers exceptional performance, low power consumption, and fast propagation delay, making it ideal for use in automotive systems, consumer electronics, and industrial equipment. Upgrade your designs with this compact and efficient logic gate today and experience the difference in performance and reliability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is lightweight, durable, and cost-effective, making it ideal for electronic components.

Propagation Delay At Nominal Supply: 8.5 ns

The low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount design enables easy and efficient PCB assembly, saving space and reducing manufacturing costs.

Nominal Supply Voltage / Vsup (V): 3.3

Operating at a commonly used supply voltage of 3.3V allows for compatibility with various electronic systems.

Load Capacitance (CL): 50 pF

With a moderate load capacitance, this logic gate can drive standard loads effectively without compromising performance.

Power Supplies (V): 2/5.5

Supporting a wide range of power supplies allows for versatile use in different voltage systems.

No. of Terminals: 5

Having a compact design with a minimal number of terminals simplifies circuit integration and reduces complexity.

Maximum I (ol): 8 Amp

The high output current capability ensures the logic gate can drive strong loads without overheating or damaging the circuit.

Propagation Delay (tpd): 12 ns

Although slightly higher than nominal delay, it still offers fast signal processing suitable for most applications.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions without performance degradation.

Minimum Operating Temperature: -40 °C

Being able to operate at low temperatures makes this logic gate suitable for a wide range of applications, including automotive and industrial settings.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This high-quality terminal finish ensures reliable contact and corrosion resistance, improving the longevity of the component.

Terminal Position: DUAL

Dual terminal position offers flexibility in PCB layout and allows for better signal routing for optimized performance.

Maximum Seated Height: 1.1 mm

The low profile design with maximum seated height enables space-saving and compact PCB layout.

Width: 1.25 mm

Small width allows for efficient use of space on the PCB, particularly in compact electronic devices.

Minimum Supply Voltage (Vsup): 2 V

Being able to operate at a low supply voltage of 2V makes this logic gate suitable for energy-efficient applications.

Peak Reflow Temperature °C: 260

The high peak reflow temperature ensures robust solder connections during assembly, improving overall reliability.

Length: 2 mm

Compact length design saves space on the PCB while maintaining performance and functionality.

Temperature Grade: AUTOMOTIVE

Designed for automotive applications, this logic gate meets stringent temperature and reliability requirements for vehicle electronics.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various electronic systems.

Terminal Form: GULL WING

The gull wing terminal form simplifies soldering and ensures secure connections during PCB assembly.

Packing Method: TR

Tape and reel packing method facilitates automated assembly processes, reducing handling and minimizing the risk of damage during transportation.

Terminal Pitch: 0.65 mm

With a small terminal pitch, this logic gate allows for densely populated PCB designs, maximizing functionality in limited space.

Maximum Supply Voltage (Vsup): 5.5 V

Supporting a maximum supply voltage of 5.5V ensures compatibility with a wide range of electronic systems and power sources.

Maximum Power Supply Current (ICC): 0.01 mA

With a low power supply current, this logic gate helps minimize energy consumption, making it suitable for battery-operated devices and energy-efficient applications.

Technical Specifications

Logic Gates SN74AHC1G04DCKTG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e4

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/5.5

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

8.5 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

1.25 mm

Trade Compliance

SN74AHC1G04DCKTG4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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