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SN74ACT08DRE4

Texas Instruments

SN74ACT08DRE4 by Texas Instruments

SN74ACT08DRE4 by Texas Instruments is a logic gate with 4 functions and 2 inputs. It has a propagation delay of 10 ns at 5V, making it ideal for industrial applications requiring fast signal processing. With a small outline package style and surface mount capability, this CMOS technology device is suitable for compact electronic designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 5,694 parts In-Stock

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Digiode

USA . 2,609 parts In-Stock

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2,609

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Mil-Aero Solutions, Inc.

USA . 1,446 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Distributors (Availability)

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Ampacity Inc.

Singapore . 468 parts In-Stock

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$10.000

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468

$10.000

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AZTECH Wire

Italy . 429 parts In-Stock

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$19.776

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Parana Technologies

USA . 1,541 parts In-Stock

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$25.657

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$26.260

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$25.657

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DigiPath Technology Company

USA . 2,256 parts In-Stock

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$28.251

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$25.991

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IDEA Electronic Components Group

UK . 2,053 parts In-Stock

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$28.828

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$27.387

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$25.945

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2,053

$28.828

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ChromeModa Solutions

Germany . 1,928 parts In-Stock

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$28.828

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$23.639

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One Stop Electronics

USA . 1,433 parts In-Stock

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Microchip USA

USA . 4,264 parts In-Stock

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Corphita

USA . 4,080 parts In-Stock

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Bastille Electronics

Australia . 1,000 parts In-Stock

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Overview

Enhance your electronic projects with the SN74ACT08DRE4 by Texas Instruments, a high-quality logic gate that offers unmatched reliability and performance. Manufactured by industry leader Texas Instruments, this versatile device is perfect for a wide range of applications in the electronics industry. Its advanced technology ensures fast propagation delay and low power consumption, making it a valuable addition to any project. Trust Texas Instruments for top-notch quality and innovation, and experience the benefits of using the SN74ACT08DRE4 in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this product lightweight and durable, suitable for various applications.

Propagation Delay At Nominal Supply: 10 ns

With a fast propagation delay of 10 ns at nominal supply voltage, this logic gate ensures quick response times in processing signals.

Surface Mount: YES

Being surface mountable, this logic gate can be easily integrated into circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement and alignment on circuit boards, optimizing the use of space.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard nominal supply voltage of 5V, this logic gate is compatible with a wide range of electronic systems and components.

Technology: CMOS

Utilizing CMOS technology, this logic gate offers low power consumption and high noise immunity, making it energy-efficient and reliable for digital logic operations.

Technical Specifications

Logic Gates SN74ACT08DRE4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

ACT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e4

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

.02 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

10 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN74ACT08DRE4 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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