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SN7400DRG4

Texas Instruments

SN7400DRG4 by Texas Instruments

SN7400DRG4 by Texas Instruments is a TTL logic gate with 4 functions and 2 inputs. It has a propagation delay of 22 ns at 5V, making it suitable for high-speed applications. This small outline package with gull wing terminals is ideal for surface mount designs in commercial temperature environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,415 parts In-Stock

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Digiode

USA . 1,052 parts In-Stock

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1,052

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Distributors (Availability)

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One Stop Electronics

USA . 955 parts In-Stock

1+ parts

$6.000

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955

$6.000

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Parana Technologies

USA . 2,167 parts In-Stock

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$9.898

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$10.467

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2,167

$9.898

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$10.467

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DigiPath Technology Company

USA . 1,102 parts In-Stock

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$10.899

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1,102

$10.899

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ChromeModa Solutions

Germany . 2,332 parts In-Stock

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$11.121

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$9.119

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2,332

$11.121

$9.119

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IDEA Electronic Components Group

UK . 308 parts In-Stock

1+ parts

$11.121

100+ parts

$10.565

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$10.009

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308

$11.121

$10.565

$10.009

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AZTECH Wire

Italy . 295 parts In-Stock

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$19.197

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295

$19.197

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Corphita

USA . 3,133 parts In-Stock

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Microchip USA

USA . 146 parts In-Stock

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Overview

Discover the exceptional quality and reliability of the Texas Instruments SN7400DRG4 Logic Gates. Manufactured by a trusted industry leader, this product offers unparalleled performance and precision for a wide range of applications. With its innovative design and fast propagation delay, the SN7400DRG4 delivers outstanding value and benefits to customers looking for high-quality logic gates. Trust in Texas Instruments to provide you with cutting-edge technology that exceeds expectations. Choose the SN7400DRG4 for your next project and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the internal components of the logic gates, making it suitable for various applications.

Propagation Delay At Nominal Supply: 22 ns

The low propagation delay ensures fast processing of signals, making this product ideal for applications that require quick response times.

No. of Functions: 4

Having multiple functions in a single component allows for efficient use of space and resources in circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard voltage level of 5V makes this product compatible with a wide range of existing systems and devices.

Maximum Operating Temperature: 70 °C

The ability to operate at high temperatures enhances the product's reliability and performance in demanding environments.

Technical Specifications

Logic Gates SN7400DRG4 attributes and parameters. Explore more Logic Gates devices from Texas Instruments

Specs

Family:

TTL/H/L

JESD-30 Code:

R-PDSO-G14

Length:

8.65 mm

Load Capacitance (CL):

15 pF

Logic IC Type:

Maximum I (ol):

16 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

5

Maximum Power Supply Current (ICC):

22 mA

Propagation Delay At Nominal Supply:

22 ns

Propagation Delay (tpd):

22 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.25 V

Minimum Supply Voltage (Vsup):

4.75 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

TTL

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3.9 mm

Trade Compliance

SN7400DRG4 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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