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RF430CL330HRGT

Texas Instruments

RF430CL330HRGT by Texas Instruments

Texas Instruments RF430CL330HRGT is a telecom IC with 16 terminals, operating at -40 to 85°C. It has a nominal voltage of 3.3V and terminal pitch of 0.5mm. This chip carrier package is ideal for industrial applications requiring a very thin profile design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,830 parts In-Stock

1+ parts

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3,830

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Digiode

USA . 1,068 parts In-Stock

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1,068

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,301 parts In-Stock

1+ parts

$11.655

100+ parts

-

1k+ parts

$12.048

10k+ parts

-

1,301

$11.655

-

$12.048

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ChromeModa Solutions

Germany . 3,245 parts In-Stock

1+ parts

$13.096

100+ parts

$10.739

1k+ parts

-

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3,245

$13.096

$10.739

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IDEA Electronic Components Group

UK . 2,331 parts In-Stock

1+ parts

$13.096

100+ parts

$12.441

1k+ parts

$11.786

10k+ parts

-

2,331

$13.096

$12.441

$11.786

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AZTECH Wire

Italy . 305 parts In-Stock

1+ parts

$18.081

100+ parts

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305

$18.081

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One Stop Electronics

USA . 1,486 parts In-Stock

1+ parts

$725.000

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1,486

$725.000

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Corphita

USA . 3,054 parts In-Stock

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3,054

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DigiPath Technology Company

USA . 1,341 parts In-Stock

1+ parts

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100+ parts

$11.807

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1,341

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$11.807

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Overview

Unleash the power of seamless connectivity with the RF430CL330HRGT by Texas Instruments. Crafted with precision and expertise, this innovative product offers unparalleled quality and reliability. Whether used in smart devices, IoT applications, or telecom systems, this versatile IC delivers unmatched performance and efficiency. Elevate your projects with the value and benefits that only Texas Instruments can provide. Experience the advantages of cutting-edge technology and unlock endless possibilities with the RF430CL330HRGT.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body ensures durability and reliability for long-term use.

Surface Mount: YES

Being surface mountable makes it easier to integrate into various electronic devices and PCB designs efficiently.

Package Shape: SQUARE

The square package shape provides a compact form factor, allowing for efficient use of space on the PCB.

No. of Terminals: 16

Having 16 terminals enables the IC to handle multiple functions and connections, making it versatile for telecom applications.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile package styles enhance heat dissipation, performance, and overall efficiency.

Maximum Operating Temperature: 85 °C

With a maximum operating temperature of 85°C, this IC can function reliably in various industrial environments without overheating.

Nominal Supply Voltage: 3.3 V

Operating at a nominal supply voltage of 3.3V ensures compatibility with standard power sources and efficient power consumption.

Terminal Pitch: 0.5 mm

The small terminal pitch of 0.5mm allows for high-density mounting on the PCB, saving valuable space and improving connectivity.

Technical Specifications

Other Function Telecom Interface ICs RF430CL330HRGT attributes and parameters. Explore more Other Function Telecom Interface ICs devices from Texas Instruments

Specs

JESD-30 Code:

S-PQCC-N16

Length:

3 mm

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Telecom IC Type:

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

3 mm

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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